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    XN0D873 Search Results

    XN0D873 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    XN0D873 Panasonic Silicon N-channel junction FET Original PDF
    XN0D873 Panasonic Silicon N-Channel Junction FET Original PDF

    XN0D873 Datasheets Context Search

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    XN1D873

    Abstract: No abstract text available
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Drain-coupled FETs) • Reduction of the mounting area and assembly cost by one half


    Original
    PDF XN0D873 XN1D873) 2SK1103 XN1D873

    FET121

    Abstract: 2SK1103 XN0D873 XN1D873
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF XN0D873 XN1D873) 2SK1103 SC-74A FET121 2SK1103 XN0D873 XN1D873

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● ● Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half.


    Original
    PDF XN0D873 XN1D873) 2SK1103

    FET121

    Abstract: No abstract text available
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 1.50+0.25 –0.05 3 1 • Basic Part Number 0.65±0.15 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Drain current Gate current


    Original
    PDF XN0D873 XN1D873) 2SK1103 FET121

    2SK1103

    Abstract: XN0D873 XN1D873 FET121
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 2 1 0.65±0.15 0.30+0.10 –0.05 • Basic Part Number 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Parameter Symbol Rating Unit VGDS −50 V Drain current


    Original
    PDF XN0D873 XN1D873) 2SK1103 2SK1103 XN0D873 XN1D873 FET121

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928