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    2SK10 Search Results

    2SK10 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1056-E Renesas Electronics Corporation N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1058-E Renesas Electronics Corporation N Channel MOSFET, TO-3P, /Tube Visit Renesas Electronics Corporation
    2SK1057-E Renesas Electronics Corporation N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1095-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A Mohm To-220Fm Visit Renesas Electronics Corporation
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    2SK10 Price and Stock

    Rochester Electronics LLC 2SK1094-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1094-E Bulk 107
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    Rochester Electronics LLC 2SK1093-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1093-E Bulk 179
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    Renesas Electronics Corporation 2SK1058-E

    MOSFET N-CH 160V 7A TO3P
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    DigiKey 2SK1058-E Tube
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    Avnet Silica 2SK1058-E 28 Weeks 3,600
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    Rochester Electronics LLC 2SK1060-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1060-AZ Bulk 270
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    Rochester Electronics LLC 2SK1094-93

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1094-93 Bulk 107
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    Find more 2SK10 price and stock on Findchips.com

    2SK10 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1000 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1000 NEC Small Signal FET(Junction type) AM tuner, HF amplification Original PDF
    2SK1000 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK1000 Unknown FET Data Book Scan PDF
    2SK1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1001 Unknown FET Data Book Scan PDF
    2SK1001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1002 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1002 Unknown FET Data Book Scan PDF
    2SK1006 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1006 Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1006 Unknown Scan PDF
    2SK1006 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1006 Unknown FET Data Book Scan PDF
    2SK1006-01M Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF
    2SK1006-01MR Fuji Electric N-CHANNEL SILICON POWER MOSFET Scan PDF
    2SK1006M Collmer Semiconductor MOSFET Selection Guide Scan PDF
    2SK1007 Collmer Semiconductor MOSFET Transistors Scan PDF
    2SK1007 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1007 Unknown FET Data Book Scan PDF
    ...

    2SK10 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SJ167

    Abstract: 2SK1061 2sk106
    Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		2SK1061 2SJ167 2SJ167 2SK1061 2sk106 PDF

    2SK1093

    Abstract: 2SK970
    Text: 2SK1093 Silicon N-Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		2SK1093 220FM 2SK1093 2SK970 PDF

    2SK1069

    Abstract: 2SK771 2SK77
    Text: Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1069] 0.425 • Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,


    Original     		EN2749 2SK1069 2SK1069] 2SK1069applied 2SK1069 2SK771 2SK77 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		2SK1061 2SJ167 PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Text: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


    OCR Scan     		2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Text: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


    OCR Scan     		2SK1221-01 T0220 2SK1917-01M T0220F15 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M 2SK1011 2SK1013-01 2SK1222-01 2sk1211 PDF

    2SK1083-M

    Abstract: 000201 A2126
    Text: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance


    OCR Scan     		2SK1083-M SC-67 80jjs A2-126 000201 A2126 PDF

    s2e transistor

    Abstract: S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065
    Text: SANYO S E M I C O N D U C T O R 2SK1065 TTTTOTb ÜOOhTb? 2 SSE D CORP T - 3 1 ‘2 5 # N-Channel'Junction Silicon FET 2057 High-Frequency General-Purpose Amp Applications 2746 Features • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer


    OCR Scan     		2SK1065 2SK1065-applied s2e transistor S2E MARKING cp 035 sanyo vds5 2SK242 2SK1065 PDF

    oms 450

    Abstract: 2SK1086-M A2131 P channel MOSFET 10A schematic
    Text: 2SK1086-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features 1High current k 5 *0 2 'Low on-resistance »No secondary breakdown 2 7±0 2 >l_ow driving power 1High forward Transconductance


    OCR Scan     		2SK1086-M SC-67 A2-132 oms 450 A2131 P channel MOSFET 10A schematic PDF

    5sV80

    Abstract: A2138 00GE schematic symbol for n channel fet xldr 1088-M 088-M 2sk1
    Text: 2SK1088-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S Outline Drawings • Features • High current • Low on-resistance • No secondary b reakdow n • Low driving p o w er • High fo rw a rd T ransconductance


    OCR Scan     		088-M SC-67 A2-138 5sV80 A2138 00GE schematic symbol for n channel fet xldr 1088-M 2sk1 PDF

    2SK1036

    Abstract: No abstract text available
    Text: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o


    OCR Scan     		2SK1036 O-220 D01713Ã 2SK1036 PDF

    2SK1006-01M

    Abstract: 2sk mosfet
    Text: 2SK1006-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High voltage


    OCR Scan     		2SK1006-01M SC-67 A2-71 2SK1006-01M 2sk mosfet PDF

    2SK1083-M

    Abstract: No abstract text available
    Text: 2SK1083-M S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S O utline D raw ings •Features High current ♦02 4 5*0 2 Low on-resistance No secondary breakdow n Low driving p o w er 'H ig h fo rw ard T ransconductance


    OCR Scan     		2SK1083-M SC-67 A2-126 PDF

    2SK1032

    Abstract: 2SK1032A SC-65
    Text: Power F-MOS FET 2SK1032, 2SK1032A 2SK1032, 2SK1032A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds, on : R ds ( o n ) = 1 . 3 f l (ty p .) Unit: mm • High sw itch in g r a te : t ( = 1 2 0 n s (ty p .)


    OCR Scan     		2SK1032, 2SK1032A 120ns 2SK1032 Tc-25 DG1713G 2SK1032A SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		2SK1062 2SJ168. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1094 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		2SK1094 2SK971. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1098-M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications


    OCR Scan     		2SK1098-M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ160,2SJ161,2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • Good frequency characteristic • High speed switching • Wide area of safe operation


    OCR Scan     		2SJ160 2SJ161 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160, 2SJ161, 2SJ160 PDF

    T0220F

    Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
    Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)


    OCR Scan     		2SK1082 2SK962 2SK1217 T03PF 2SK1512 2SK1511 2SK1008-01 T0220 2SK1010-01 T0220F T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390 PDF

    wt1e

    Abstract: 2SK 93
    Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof


    OCR Scan     		2SK1013-01 wt1e 2SK 93 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01


    OCR Scan     		2SK2519-01 2SK2520-01 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 PDF

    Hitachi 2SJ

    Abstract: 2SK1058 J162
    Text: 2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET HITACHI November 1996 Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation


    OCR Scan     		2SJ160, 2SJ161, 2SJ162 2SK1056, 2SK1057 2SK1058 2SJ160 Hitachi 2SJ 2SK1058 J162 PDF

    NI3T

    Abstract: te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent
    Text: 2SK1020 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Features lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •Voss —± 30V Guarantee ■Applications


    OCR Scan     		2SK1020 NI3T te tfk TFK 03 Diode TFK U 111 B A211-1 a1ae 2SK1020 equivalent PDF

    OAAI

    Abstract: A2140
    Text: 2SK1089 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F - I I I S E R I E S • Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers • General purpose power amplifier


    OCR Scan     		2SK1089 OAAI A2140 PDF