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    2SK106 Search Results

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    2SK106 Price and Stock

    Rochester Electronics LLC 2SK1069-4-TL-E

    2SK1069 - N-CHANNEL JUNCTION SIL
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    DigiKey 2SK1069-4-TL-E Bulk 2,566 258
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    2SK1069-4-TL-E Bulk 2,566 258
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    Rochester Electronics LLC 2SK1060-AZ

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1060-AZ Bulk 270
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    Rochester Electronics LLC 2SK1069-5-TL-E

    JFET N-CH 40V 20MA 3MCPH
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    DigiKey 2SK1069-5-TL-E Bulk 258
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    Toshiba America Electronic Components 2SK1062(TE85L,F)

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59 (Also Known As: 2SK1062)
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    Quest Components 2SK1062(TE85L,F) 2,180
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    2SK1062(TE85L,F) 2,180
    • 1 $1.74
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    TME 2SK1062(TE85L,F) 1
    • 1 $0.751
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    • 100 $0.483
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    onsemi 2SK1069-5-TL-E

    2SK1069 - Low-Frequency General-Purpose Amplifier Applications '
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    Rochester Electronics 2SK1069-5-TL-E 24,000 1
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    Find more 2SK106 price and stock on Findchips.com

    2SK106 Datasheets (88)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK106 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK106 Unknown FET Data Book Scan PDF
    2SK106 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK106 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK106 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK1060 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK1060 Unknown FET Data Book Scan PDF
    2SK1060 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1060Z Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1060-Z Unknown FET Data Book Scan PDF
    2SK1061 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On 0.6 (max 1); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 200) Original PDF
    2SK1061 Unknown FET Data Book Scan PDF
    2SK1061 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1061 Toshiba N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) Scan PDF
    2SK1061 Toshiba N-Channel MOSFET Scan PDF
    2SK1061 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK1062 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On 0.6 (max 1); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 200) Original PDF
    2SK1062 Unknown FET Data Book Scan PDF
    2SK1062 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1062 Toshiba N CHANNEL MOS TYPE (HIGH SPEED SWTICHING, ANALOG SWITCHING, INTERFACE APPLICATIONS) Scan PDF

    2SK106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ167

    Abstract: 2SK1061 2sk106
    Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SK1061 2SJ167 2SJ167 2SK1061 2sk106

    2SK1069

    Abstract: 2SK771 2SK77
    Text: Ordering number:EN2749 N-Channel Junction Silicon FET 2SK1069 Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2058 [2SK1069] 0.425 • Low-frequency general-purpose amplifiers. · Ideal for use in variable resistors, analog switches,


    Original     		PDF EN2749 2SK1069 2SK1069] 2SK1069applied 2SK1069 2SK771 2SK77

    Untitled

    Abstract: No abstract text available
    Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SK1061 2SJ167

    EN2747

    Abstract: 2SK1066 2SK436 2SK43
    Text: Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. unit:mm 2058


    Original     		PDF EN2747 2SK1066 2SK1066applied 2SK1066] EN2747 2SK1066 2SK436 2SK43

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SK1061 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1061 High Speed Switching Applications Analog Switch Applications Interface Applications • Unit: mm Excellent switching times: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 mS (min)


    Original     		PDF 2SK1061 2SJ167 2SK1061 Toshiba 2SJ

    2SK1069

    Abstract: 2SK771 ITR01021 ITR01022 ITR01023 ITR01024 ITR01025 ITR01026 ITR01027
    Text: 注文コード No. N 2 7 4 9 2SK1069 No. N2749 83199 2SK1069 用途 N チャネル接合形シリコン電界効果トランジスタ 低周波一般増幅用 ・低周波一般増幅用。 ・可変抵抗器 , アナログスイッチ , 低周波増幅 , 定電流用として最適である。


    Original     		PDF 2SK1069 N2749 ITR01025 ITR01027 ITR01028 ITR01029 ITR01030 2SK1069 2SK771 ITR01021 ITR01022 ITR01023 ITR01024 ITR01025 ITR01026 ITR01027

    Untitled

    Abstract: No abstract text available
    Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)


    Original     		PDF 2SK1062 2SJ168

    Untitled

    Abstract: No abstract text available
    Text: 2SK1060 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		PDF 2SK1060

    2SJ168

    Abstract: 2SK1062
    Text: 2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1062 High Speed Switching Applications Analog Switching Applications Interface Applications Unit: mm • Excellent switching time: ton = 14 ns typ. • High forward transfer admittance: |Yfs| = 100 ms (min)


    Original     		PDF 2SK1062 2SJ168 2SJ168 2SK1062

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN2747 N-Channel Junction Silicon FET 2SK1066 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • High-frequency general-purpose amplifier. · AM tuner RF amplifier. · Low-noise amplifier. unit:mm 2058


    Original     		PDF EN2747 2SK1066 2SK1066] 2SK1066applied

    Untitled

    Abstract: No abstract text available
    Text: 2SK1068 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)300u


    Original     		PDF 2SK1068

    2SK1065

    Abstract: 2SK242 2SK106 EN2746
    Text: Ordering number:EN2746 N-Channel Junction Silicon FET 2SK1065 High-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2057 [2SK1065] 0.425 • Ultrasmall-sized package permitting 2SK1065applied sets to be made smaller and slimmer. · Small Crss Crss=0.04pF typ .


    Original     		PDF EN2746 2SK1065 2SK1065] 2SK1065applied 2SK1065 2SK242 2SK106 EN2746

    2sk129

    Abstract: 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG ID Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) Pd/Pch Tj/Tch min (V) 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2SK110 2SK111 2SK112 2SK113 2SK117 2SK118 2SK119


    Original     		PDF 2SK101 2SK102 2SK103 2SK104 2SK105 2SK106 2SK107 2SK108 2SK109 2SK109A 2sk129 2sk150 datasheet 2SK101 2SK107 data sheet 2SK105 Datasheet 2sk122 2SK109 2sk146 datasheet 2SK182E 2SK131

    2SK1068

    Abstract: 2SK545 ITR01011 ITR01012 ITR01013 ITR01014 ITR01015 ITR01016 ITR01017
    Text: 注文コード No. N 2 7 4 8 2SK1068 No. N2748 83199 2SK1068 用途 N チャネル接合形シリコン電界効果トランジスタ インピーダンス変換用 ・インピーダンス変換用。 ・赤外線センサ用。 特長 ・IGSS が小さい。


    Original     		PDF 2SK1068 N2748 2SK1068 ITR01017 ITR01018 ITR01019 ITR01020 2SK545 ITR01011 ITR01012 ITR01013 ITR01014 ITR01015 ITR01016 ITR01017

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1061 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 061 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4.2M AX NTERFACE APPLICATIONS Excellent Switching Times ton = 14ns Typ. High Forward Transfer Admittance |Yfs| = lOOmS (Min.)


    OCR Scan     		PDF 2SK1061 2SJ167

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1062 2SJ168.

    2sk 100a

    Abstract: 2SK1063
    Text: 2SK1063,2SK1064blE » • MMÌbEOS G Ü 13173 T 3 T SILICON N-CHANNEL MOS F E T IH I T 4 HITACHI/ OPTOELECTRONICS HIGH SPEED POWER SWITCHING 1. Gate 2. Source 3. Drain (C ase) (Dimensions in nun) (JE D E C T O -3 ) IABSOLUTE MAXIMUM RATINGS (To=25°C) Ite m


    OCR Scan     		PDF 2SK1063 2SK1064blE 001317b 2sk 100a

    2SJ168

    Abstract: 2SK1062 1318F
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE 2 S K 1 062 Unit in mm HIGH SPEED SWITCHING APPLICATIONS + 0.5 2.5-0.3 + 0.25 1.5-0.15 ANALO G SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Sw itching Time : ton = 14 ns Typ.


    OCR Scan     		PDF 2SK1062 2SJ168. SC-59 2SJ168 2SK1062 1318F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1062 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE niiinfi? Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCHING APPLICATIONS INTERFACE APPLICATIONS Excellent Switching Time : ton = 14ns Typ. High Forward Transfer Admittance


    OCR Scan     		PDF 2SK1062 2SJ168.

    2SK1065

    Abstract: 2SK242 4298TA
    Text: 2746 Ordering number: EN _ 2 S K 1 0 6 5 No.2746 N-Channel Junction Silicon FET High-Frequency General-Purpose Amp Applications F e a tu re s • Very small-sized package permitting 2SK1065-applied sets to be made smaller and slimmer •Small crss crss = 0.04pF typ


    OCR Scan     		PDF 2SK1065 2SK1065-applied 2SK1065 2SK242 4298TA

    27481

    Abstract: No abstract text available
    Text: |~Ord e rin g n u m b e - : E N 2 7 4 8 ] 2SK1068 N o .2 7 4 8 S A \Y O N-Channel Junction Silicon FET Impedance Conversion Applications A p p lic a tio n s • Inpedance conversion •Irfrared sensor F eatu res • Small Igss - Small crss • Very small-sized package perm itting 2SK1068-applied sets to be made sm aller and slimmer


    OCR Scan     		PDF 2SK1068 2SK1068-applied --20V 2SK545. 4298TA 27481

    2SK1060

    Abstract: K1060 TC-7642 JE 33 lm 3773 xm 0911 P0886 tc7642 lft03 2sk1060-z
    Text: M O S F ie ld E ffe ct P o w e r T ra n sisto rs 2SK1060,1060 I # N X < r 7 — M O S F E T « Ï o n y J V 'O V Vcs — 4 V X '< r > r — °i& RD S(0n>(= 0-27 ß at Vcs = 10 V) 2SK1060-Z f i W / ' J v K IC n & tz & M fr U - KDüI ¿hT " t 0 (T a - 25 °C )


    OCR Scan     		PDF 2SK1060 O2SK1060-Z Ta-25 i044i533- K1060 TC-7642 JE 33 lm 3773 xm 0911 P0886 tc7642 lft03 2sk1060-z

    ke marking transistor

    Abstract: 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba
    Text: TOSHIBA 2SK1062 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE 2 S K 1 062 HIGH SPEED SW ITCHING APPLICATIONS Unit in mm A N A L O G SW ITCHING APPLICATIONS + 0.5 2 .5 - 0 .3 INTERFACE APPLICATIONS + 0.25 1 .5 -0 .1 5 Excellent Switching Time : ton = 14ns Typ.


    OCR Scan     		PDF 2SK1062 2SJ168. SC-59 ke marking transistor 2SJ168 2SK1062 marking transistor KE marking jyw JYW marking marking ke toshiba

    KDS 1M

    Abstract: kds 9a 2SK1063 2SK1064 KDS 5M HITACHI 2SK* TO-3 Hitachi Scans-001 kds 8a
    Text: 2SK1063.2SK1O64blE D • MMTbiEOS 0 0 1 3 1 7 3 S IL IC O N N -C H A N N E L M O S F E T T3T ih itm HITAC HI/ O PTOE LEC TRON ICS HIGH SPEED POWER SWITCHING 1. Gat« 2. 3. Source D rain (C ase) (Dimensions in nun) (JEDEC TO-3) ¡A B S O L U T E MAXIMUM R A TING S (T o -2 5 °C )


    OCR Scan     		PDF To-25 2SK1063 2SK1064 Tc-25 2SK1063, 001317b KDS 1M kds 9a KDS 5M HITACHI 2SK* TO-3 Hitachi Scans-001 kds 8a