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    Phoenix Contact IOA AI/AO/BFI/DS/0.5A/EX

    VIP field termination assemblies (FTA) with input/output accessories (IOA) provide universal channel configuration for applications seeking to evolve from a traditional fixed I/O approach. Analog input and output signals - fused with blown fuse indication - disconnect with test points - 500 mA rating.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Master Electronics IOA AI/AO/BFI/DS/0.5A/EX
    • 1 $23.63
    • 10 $22.2
    • 100 $19.53
    • 1000 $18.74
    • 10000 $18.74
    Buy Now

    OAAI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


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    OPA356 OPA2356 SBOS212A 200MHz, 450MHz OPAx356 200MHz 75MHz PDF

    OPA2356

    Abstract: OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz OPAx356 200MHz 75MHz OPA2356 OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR PDF

    OPA2356

    Abstract: OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz OPAx356 200MHz 75MHz OPA2356 OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz 200MHz 75MHz 100mV) OPAx356 PDF

    OPA356

    Abstract: 75mH
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz 200MHz 75MHz 100mV) OPAx356 75mH PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz 200MHz 75MHz 100mV) OPAx356 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other


    Original
    OPA356 OPA2356 SBOS212A 200MHz, 450MHz 200MHz 75MHz 100mV) OPAx356 PDF

    ZNA234E

    Abstract: zna234 GEC PLESSEY st 393 GEC Plessey m
    Text: u i» i » j v j •»»1^*03 . JJ* 139 A 3 S S 3 - led 0 3 0 -£ 6 € - jMiSNi IS B l jiv e 's *380 oaaiA 03 ÏIW »»<> 03 *iw a o s i + ~ S 9 - : ¿gfEjík#; • OM I — O : • AL : T H S j S í S « d ia - d 9 I : 3flr^« ar z ' ; ^ } ^ mcfY^ - ^ a9


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    ZNA234E ZNA234EÃ 500MHz 16P-DIP zna234 GEC PLESSEY st 393 GEC Plessey m PDF

    Untitled

    Abstract: No abstract text available
    Text: asc » m n?as7fl oaai7bb 3 «izetb ' . - ZETEX SEMICONDUCTORS NPN HIGH CURRENT SWITCHING T ABLE11 N P N S IL IC O N P L A N A R H IG H C U R R E N T S W I T C H IN G T R A N S I S T O R S The transistors shown in this table are designed for high current, high dissipation switching


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    ABLE11 BUY82 BUY81 BUY80 GDD17b7 T-91-20 PDF

    ISS302

    Abstract: bta 700
    Text: 30E D £ ÿ j • 7 ^ 3 3 7 oaaisfiü a ■ _ ^ \ ^ Z 5 ~ \ 1 _ S G S - T " H O M S O N B T A 41 A IL H O T O * S S G S-THOMSON TRIACS ■ GLASS PASSIVATED CHIP s p e c i f i e d in f o u r q u a d r a n t s ■ INSULATING VOLTAGE 2500 V r m s ■ UL RECOGNIZED E81734


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    E81734) ISS302 bta 700 PDF

    T106, scr

    Abstract: T106F1 SCR S0508LS3 SCR EC1038 T10701 S0508LS3 TO-220 S4003LS3 EC1030 EC10383 S2003LS1
    Text: TECCOR ELECTRONICS INC oaaiais EHE D h “ T - z s - 1 3 TECCOR ELECTRONICS, INC, 1801 HURD DRIVE IRVING, TEXAS 75038 PHONE 214/580-1515 FAX 214/550-1309 SCR’s 0.8-10 AMPS SENSITIVE GATE General Description G la ss Passivation The Teccor Electronics, inc. line of sensitive S C R


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    AA72A11 O-202AB OT-89 O-22QAB IM400t T106, scr T106F1 SCR S0508LS3 SCR EC1038 T10701 S0508LS3 TO-220 S4003LS3 EC1030 EC10383 S2003LS1 PDF

    GAA160

    Abstract: No abstract text available
    Text: DUAL POLE OptoMOS RELAYS OAAI6O DESCRIPTION The O A A I 6O is a 250V, 50mA, 100Î2 type 2-Form-A solid state relay. FEATURES APPLICATIONS • Small 8 Pin DIP Package ■ Low Drive Power Requirements TTL/CMOS Compatible ■ No Moving Parts ■ High Reliability


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    OAA160 GAA160 50mADC) DAA160 OAA16Q PDF

    smd t2a 01

    Abstract: Q67060-S6502-A2 Siemens EC 85 4T SMD CODE smd t2a Q67060-S6502-A3 6235t IDA45
    Text: ÛSBSbDS 00Ô1300 3 ^ SIEM EN S HITFET BTS 141 Smart Lowside Power Switch Features Product Summary * Logic Level Input * Input protection ESD * Thermal shutdown » Overload protection * Short circuit protection * Overvoltage protection * Current limitation


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    500i2 6235t Q67060-S6502-A2 T0220 E3045A Q67060-S6502-A3 smd t2a 01 Q67060-S6502-A2 Siemens EC 85 4T SMD CODE smd t2a Q67060-S6502-A3 IDA45 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)


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    834-A JS8834-AS MW10050196 JS8834-AS PDF

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


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    MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2 PDF

    L200k

    Abstract: No abstract text available
    Text: C D4013A Types Dual 'D’-Type Flip-Flop T h e R C A -C D 4 0 1 3 A consists o f tw o id e n tic a l, in d e p e n d e n t d a ta -ty p e flip -flo p s . Each f lip f lo p has in d e p e n d e n t data, set, reset, and c lo c k in p u ts , and Q and Q o u tp u ts . These


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    D4013A L200k PDF

    TRANSISTOR BFR97

    Abstract: BFR97 2N3866 2N3866 SCHEMATIC 2N3866-BFR97 2N3866 metal Planar choke Transistor 2N3866 data 2n3866
    Text: 30E D • 7^53537 0031187 b ■ \ ‘3 > 0 5 SGS-THOMSON IMOœiLlICTliMOûS 2N3866 BFR97 S G S-TH0MS0N VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifier cir­


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    QQ311fl7 2N3866 BFR97 2N3866-BFR97 50J-L T-33-05 2N3866-BFR97 200mW TRANSISTOR BFR97 2N3866 SCHEMATIC 2N3866 metal Planar choke Transistor 2N3866 data 2n3866 PDF

    7u23

    Abstract: No abstract text available
    Text: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.


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    KM62256CLI-LV 32Kx8Bit 100ns 72\x\N 108mW 385mW KM62256CLGI-LV 28-pin KM62256CLTGI-LV 28-PinTSOP 7u23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast CMOS 3.3V 16-Bit Registered Transceivers Product Features: Product Description: • Compatible with LCX and LVT™ families of products


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    16-Bit TGG5174 PS2073A PDF

    CD4013A

    Abstract: RCA-CD4013A d flipflop
    Text: C D 4013A Types Dual 'D’-Type Flip-Flop T he R C A -C D 4 0 1 3 A consists o f t w o id e n tic a l, in d e p e n d e n t d a ta -typ e flip -flo p s . Each f l i p ­ f lo p has in d e p e n d e n t data, set, reset, and c lo c k in p u ts , and Q and Q o u tp u ts . These


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    CD4013A RCA-CD4013A 92CS-36059 CS-56060 d flipflop PDF

    TC5047AP-1

    Abstract: 47ap toshiba 2011 TC5047AP-2 TC5047AP TC5047
    Text: [ TOSHIBA MOS MEMORY PRODUCTS TC5047AP- I TC5047AP-2 1024 WORD X 4B IT CMOS RAM S IL IC O N G A T E C M O S DESCRIPTION The TC 5047AP o rg a n iz e d as is a s ta tic 1024 w o rd s read by 4 w r ite b its The m e m o ry using th re e s ta te o u t p u ts s im p lif y


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    TC5047AP- TC5047AP-2 TC5047AP 10/uW TC5047AP-1 TC5047AP-1 47ap toshiba 2011 TC5047AP-2 TC5047 PDF

    2SB688

    Abstract: 2SD718 2SB68 2sb688-o
    Text: 8SE 10E096 091-08 '•O ‘0II- 9S : H àd — 08Z — ZH H T =J ‘0 = ^1 ‘A 0 T - = a O A ZH H — 01 — v i - = 0 i ‘A s - = a o A A S 'I - — — V 9 - = 0 l ‘AS - = 3 3 a A Q 'Z - — — 091 — 99 A — — y// o i- — Ê/ < e <- ij < é


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    2SB688 2SD718 2-16B1A -120V, 2SB688 2SB68 2sb688-o PDF

    VEB mikroelektronik

    Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
    Text: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente


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    PDF

    414 B zenar diode

    Abstract: zener diode on 822 zener diode t5 umi 122 ZENER DIODE SMA marking E10 DIODE ci 741A je200 marking AHL ZENER A4
    Text: TAIWAN SEMICONDUCTOR s à RoHS 1S M A 4737 - 1S M A 200Z 1.0 W atts Surface Mount Silicon Zener Diode COMPLIANCE S M A /D O -2 1 4 A C n I n Features -0- Q ualified as p er AEC-Q101 4- F or surface m ounted applications in order to optim ize board space Low profile package


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    1SMA4737 1SMA200Z SMA/DO-214AC AEC-Q101 MIL-STD-750. 1SMA200Z) 414 B zenar diode zener diode on 822 zener diode t5 umi 122 ZENER DIODE SMA marking E10 DIODE ci 741A je200 marking AHL ZENER A4 PDF