Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK2162 Search Results

    2SK2162 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2162 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2162 Toshiba Original PDF
    2SK2162 Toshiba Silicon N channel field effect transistor for audio frequency power amplifier applications Scan PDF
    2SK2162 Toshiba N-Channel MOSFET Scan PDF
    2SK2162 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF

    2SK2162 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2162

    Abstract: 2SJ338 2SK2162
    Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。


    Original
    PDF 2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162

    toshiba audio power amplifier

    Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original
    PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ toshiba marking code transistor

    2SJ338

    Abstract: 2SK2162 K2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original
    PDF 2SK2162 2SJ338 2SJ338 2SK2162 K2162

    2SJ338

    Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 2SJ338 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original
    PDF 2SK2162 2SJ338

    toshiba audio power amplifier

    Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original
    PDF 2SK2162 2SJ338 SC-64 toshiba audio power amplifier K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ

    Toshiba 2SJ

    Abstract: toshiba marking code transistor 2-7J1B
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 Toshiba 2SJ toshiba marking code transistor 2-7J1B

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original
    PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor

    2SJ338

    Abstract: 2SK2162 Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 2SJ338 2SK2162 Toshiba 2SJ

    2SJ338

    Abstract: 2SK2162 J338
    Text: 2SJ338 東芝電界効果トランジスタ シリコンPチャネルMOS形 2SJ338 単位: mm ○ 低周波電力増幅用 1.7 ± 0.2 6.8 MAX. z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SK2162 とコンプリメンタリになります。


    Original
    PDF 2SJ338 -180V 2SK2162 SC-64 2002/95/EC) 2SJ338 2SK2162 J338

    J338

    Abstract: Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 J338 Toshiba 2SJ

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ 2sk2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338


    Original
    PDF 2SK2162 2SJ338 SC-64 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ 2sk2162

    J338

    Abstract: 2SK2162 2SJ338 Toshiba 2SJ
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original
    PDF 2SJ338 2SK2162 SC-64 J338 2SK2162 2SJ338 Toshiba 2SJ

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original
    PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original
    PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan
    PDF 2SK2162 2SJ338

    toshiba Ta

    Abstract: 2SJ338 2SK2162
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338 INDUSTRIAL APPLICATIONS


    OCR Scan
    PDF 2SK2162 2SJ338 K2162 toshiba Ta 2SJ338 2SK2162

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2S K 2 162 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm — 1 Q A \Í T L»öö_ i v v Y • H igh Forw ard T ra n sfer A dm ittan ce : |Yfs | = 0 .7 S Typ.


    OCR Scan
    PDF 2SK2162 2SJ338

    2SJ338

    Abstract: 2SK2162
    Text: TO SH IBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : Vßgg = 180 V • High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. • Complementary to 2SJ338


    OCR Scan
    PDF 2SK2162 2SJ338 2SJ338 2SK2162

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan
    PDF 2SK2162 2SJ338

    ke marking transistor

    Abstract: TRANSISTOR rty marking IAY 2SJ338 2SK2162
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : Vj gs = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.)


    OCR Scan
    PDF 2SK2162 2SJ338 ke marking transistor TRANSISTOR rty marking IAY 2SK2162

    toshiba lot number type

    Abstract: 2SJ338 2SK2162 Toshiba 2SJ
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162 SC-64 -10mA, -10mA toshiba lot number type Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan
    PDF 2SJ338 2SK2162