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    2SJ330-AZ Renesas Electronics Corporation Switching P-Channel Power MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
    2SJ331-A Renesas Electronics Corporation Switching P-Channel Power MOSFET Visit Renesas Electronics Corporation
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    2SJ33 Price and Stock

    TE Connectivity ROX2SJ330K

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    TE Connectivity ROX2SJ33R

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    Panasonic Electronic Components ERG-2SJ333

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    2SJ33 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ33 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SJ33 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SJ330 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ330 NEC Semiconductor Selection Guide Original PDF
    2SJ330 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Scan PDF
    2SJ330 NEC Switching P-Channel Power MOS FET Industrial Use Scan PDF
    2SJ331 NEC Semiconductor Selection Guide 1995 Original PDF
    2SJ331 NEC Semiconductor Selection Guide Original PDF
    2SJ331 NEC SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE Scan PDF
    2SJ331 NEC Switching P-Channel Power MOS FET Industrial Use Scan PDF
    2SJ332L Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ332S Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ333L Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ333L Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ333S Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ333S Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ334 Toshiba TRANS MOSFET P-CH 60V 30A 3(2-10R1B) Original PDF
    2SJ334 Toshiba Original PDF
    2SJ334 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SJ334 Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF

    2SJ33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2162

    Abstract: 2SJ338 2SK2162
    Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。


    Original     		PDF 2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162

    J334

    Abstract: 2SJ334
    Text: 2SJ334 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ334 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29mΩ(標準) z オン抵抗が低い。


    Original     		PDF 2SJ334 -100A -10VID 2-10R1B SC-67 2002/95/EC) J334 2SJ334

    toshiba audio power amplifier

    Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162

    J334 transistor

    Abstract: j334 2SJ334
    Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance


    Original     		PDF 2SJ334 J334 transistor j334 2SJ334

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: Toshiba 2SJ toshiba marking code transistor
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm


    Original     		PDF 2SK2162 2SJ338 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ toshiba marking code transistor

    2SJ337

    Abstract: No abstract text available
    Text: Ordering number:EN4669 P-Channel Silicon MOSFET 2SJ337 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ337] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5


    Original     		PDF EN4669 2SJ337 2083B 2SJ337] 2092B 2SJ337

    2SJ311

    Abstract: 2SJ331 MP-88 Field Effect Transistors 2sj33
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistors 2SJ331 P チャネル パワーMOS FET スイッチング用 2SJ311 は，P チャネルパワーMOS FET でオン抵抗が低く，スイッチング特性が優れており，各種アクチュエータ


    Original     		PDF 2SJ331 2SJ311 D18444JJ2V0DS00 TC-7971 D18444JJ2V0DS 2SJ33J2V0DS 2SJ331 MP-88 Field Effect Transistors 2sj33

    2SJ338

    Abstract: 2SK2162 K2162
    Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications 5.2 ± 0.2 High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Drain-source voltage


    Original     		PDF 2SK2162 2SJ338 2SJ338 2SK2162 K2162

    J334 transistor

    Abstract: j334 2SJ334 transistor j334
    Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SJ334 J334 transistor j334 2SJ334 transistor j334

    Untitled

    Abstract: No abstract text available
    Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance


    Original     		PDF 2SJ334

    2SJ338

    Abstract: 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type 2SJ338 Audio-Frequency Power Amplifier Applications z High breakdown voltage : VDSS = −180 V z High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm z Complementary to 2SK2162 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ338 2SK2162 2SJ338 2SK2162 J338 Toshiba 2SJ toshiba marking code transistor

    2SJ339

    Abstract: No abstract text available
    Text: Ordering number:ENN6396 P-Channel Silicon MOSFET 2SJ339 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ339] 4.5


    Original     		PDF ENN6396 2SJ339 2SJ339] O-220ML 2SJ339

    toshiba lot number type

    Abstract: 2SJ338 2SK2162 Toshiba 2SJ
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan     		PDF 2SJ338 2SK2162 SC-64 -10mA, -10mA toshiba lot number type Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ 338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V;ogg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan     		PDF 2SJ338 2SK2162

    dS 3202

    Abstract: 2SJ330 s62j
    Text: ~ jr • v — h M 0 S B # ^ ^ / \ ° 7 - M 0 S FET MOS Field Effect Power Transistor 2SJ330 P ? - * * ; U / \ #7 - M 0 S FET X -f y 3 - > * )' I l f f l 2SJ330 l i P 31 + * JW \°7 - MOS FETT * < m m m it : mm) >y * ® S £ ^ D C - D C □ > / < • - £ t C f t ì l 7 1 o


    OCR Scan     		PDF 2SJ330 2SJ330 dS 3202 s62j

    J334 transistor

    Abstract: transistor j334
    Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 3.2 ± 0 .2 1° 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.) High Forward Transfer Admittance : |Yfs| = 23S(Typ.)


    OCR Scan     		PDF 2SJ334 --60V) V10ms¿ --50V, 747//H J334 transistor transistor j334

    2sj332

    Abstract: 2SJ332S
    Text: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET HITACHI ADE-208-073 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •


    OCR Scan     		PDF 2SJ332 ADE-208-073 2SJ332S

    2SJ330

    Abstract: MEI-1202 TEA-1035
    Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC Ü— DATA SHEET P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET


    OCR Scan     		PDF 2SJ330 IEI-1209) MEI-1202 TEA-1035

    2SK2637

    Abstract: No abstract text available
    Text: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV


    OCR Scan     		PDF 2SJ316 2SJ335 2SJ381 FX207 FX601 2SJ336 2SJ337 2SJ382 2SJ383 2SJ419 2SK2637

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SJ334 DATA SILICON P CHANNEL MOS TYPE L 2- 7 T - MOS V (2SJ334) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE


    OCR Scan     		PDF 2SJ334 2SJ334) --60V) 20kfi) 2SJ334

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.


    OCR Scan     		PDF 2SJ338 --180V 2SK2162 --10mA

    sj33

    Abstract: No abstract text available
    Text: 2SJ333 L , 2SJ333 S Si li con P- Cha nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V Source • Suitable for Switching regulator, DC - DC


    OCR Scan     		PDF 2SJ333 sj33

    Untitled

    Abstract: No abstract text available
    Text: 2SJ333 L , 2SJ333(S) Silicon P-Channel MOS FET HITACHI ADE-208-072 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •


    OCR Scan     		PDF 2SJ333 ADE-208-072

    J334 transistor

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)


    OCR Scan     		PDF 2SJ334 V10ms 747//H J334 transistor