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    2SJ295 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    2SJ295-E Renesas Electronics Corporation Pch Single Power Mosfet -60V -30A 43Mohm To-220Fm Visit Renesas Electronics Corporation

    2SJ295 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SJ295 Hitachi Semiconductor Mosfet Guide Original PDF
    2SJ295 NEC MOS Field Effect Power Transistors Original PDF
    2SJ295 Renesas Technology Silicon P-Channel MOS FET Original PDF
    2SJ295 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SJ295 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ295 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ295 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ295 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SJ295 Unknown FET Data Book Scan PDF

    2SJ295 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ295

    Abstract: Hitachi DSA001651
    Text: 2SJ295 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter


    Original     		PDF 2SJ295 O-220FM 2SJ295 Hitachi DSA001651

    2SJ295

    Abstract: 2SJ280
    Text: 2SJ295 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ295 220FM 2SJ280 2SJ295 2SJ280

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    hitachi mosfet audio

    Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
    Text: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


    Original     		PDF O-220 HAF2001 500pcsxN) O-92MOD O-126MOD O-126FM O-220AB O-220FM O-220C SP-10 hitachi mosfet audio D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317

    2SJ295

    Abstract: 2SJ280
    Text: 2SJ295 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ295 O-22QFM 2SJ280

    2SJ295

    Abstract: V1LD
    Text: 2SJ295 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter


    OCR Scan     		PDF 2SJ295 2SJ280 2SJ295 V1LD

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    2SK1778

    Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2SJ299

    Abstract: mosfet 740 2SJ292 2sj298 2SJ294 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


    OCR Scan     		PDF packag45 2SK1910 2SK1911 2SJ293 2SJ294 T0-220FM 2SJ295 2SK1951 2SK1952 2SJ296 2SJ299 mosfet 740 2SJ292 2sj298 2SJ295 2SJ317 2SJ278 2SJ279 2SJ290

    2sk1299

    Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
    Text: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sk1299 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298

    PF0040

    Abstract: 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919
    Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 PF0040 2sk mosfet pf0030 hitachi 2sj217 2SJ299 2sk mosfet rf power 2sk1299 2SJ214 2SJ295 2SK1919

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17

    2SK2225 equivalent

    Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1156 2SK1313 2SK1314 2SK1540 2SK1541 2SK2225 equivalent 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent

    2SJ292

    Abstract: 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 New DIV-L Series 13 • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2SJ292 2sk mosfet 2SK1950 2SJ295 2SJ299 2SK1919 transistor 2sk 2SJ278 2SJ279 2SJ290

    2SJ239

    Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
    Text: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS


    OCR Scan     		PDF Ta-25 2SJ230 2SJ231 2SJ232 2SJZ33 2SJ234Ã 155ns, 500nstyp 2SJ291 200ns, 2SJ239 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ232 2SJ234

    2sj177

    Abstract: 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290
    Text: HITACHI 1.5.4 13 New DIV-L Series • • 2.5V and 4V gate drive device High speed switching 30% reduction in fall time, tf • Strong resistance to inductive load over voltage avalanche breakdown. • Stronger built-in diode breakdown capability • Wide range of P-channel devices


    OCR Scan     		PDF 2SJ2-46 2SJ223 2SJ182 2SJ245 2SJ214 2SJ219 2SJ220 2SJ242 2SJ175 2SJ176 2sj177 2SJ299 PF0040 2SJ292 2SJ295 Hitachi PF0030 TO220FM 2SJ278 2SJ279 2SJ290

    2SJ177

    Abstract: 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294
    Text: Index P-Channel 2SJ Series 2SJ76. 149 2SJ77. 149


    OCR Scan     		PDF 2SJ76. 2SJ77. 2SJ78 2SJ79. 2SJ13( HAT1032T. HATI033T. HAT2031T. HAT2037T. 2SJ177 2SJ series 2SJ2 Hitachi 2SJ 2SJ 294