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TE Connectivity


TE Connectivity ROX2SJ27K RES 27K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ27K	Ammo Pack	19,000		1,000	1 - 10 - 100 - 1000 $0.0791 10000 $0.05939	Buy Now
Mouser Electronics	ROX2SJ27K		12,151			1 $0.27 10 $0.17 100 $0.113 1000 $0.068 10000 $0.059	Buy Now
Newark	ROX2SJ27K	Bulk	9,453		10	1 - 10 $0.141 100 $0.086 1000 $0.067 10000 $0.053	Buy Now
Avnet Abacus	ROX2SJ27K			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ROX2SJ27K					1 - 10 - 100 - 1000 $0.0717 10000 $0.0541	Buy Now
TE Connectivity ROX2SJ2R0 RES 2 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ2R0	Cut Tape	13,108		1	1 $0.12 10 $0.098 100 $0.0808 1000 $0.07098 10000 $0.07098	Buy Now
	ROX2SJ2R0	Ammo Pack	13,000		1,000	1 - 10 - 100 - 1000 $0.06733 10000 $0.05759	Buy Now
Mouser Electronics	ROX2SJ2R0					1 $0.12 10 $0.098 100 $0.081 1000 $0.062 10000 $0.057	Get Quote
Newark	ROX2SJ2R0	Bulk			12,000	1 - 10 - 100 - 1000 - 10000 $0.056	Buy Now
Avnet Abacus	ROX2SJ2R0			11 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ROX2SJ2R0					1 - 10 - 100 - 1000 $0.0696 10000 $0.0524	Buy Now
TE Connectivity ROX2SJ220K RES 220K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ220K	Ammo Pack	8,000		1,000	1 - 10 - 100 - 1000 $0.08237 10000 $0.06193	Buy Now
Mouser Electronics	ROX2SJ220K		11,745			1 $0.28 10 $0.177 100 $0.105 1000 $0.065 10000 $0.061	Buy Now
Newark	ROX2SJ220K	Bulk	3,313		10	1 - 10 $0.12 100 $0.082 1000 $0.07 10000 $0.055	Buy Now
Avnet Abacus	ROX2SJ220K			18 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	ROX2SJ220K		4,000			1 - 10 - 100 - 1000 $0.0715 10000 $0.0549	Buy Now
TE Connectivity ROX2SJ22K RES 22K OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ22K	Cut Tape	6,976		1	1 $0.27 10 $0.17 100 $0.1129 1000 $0.08744 10000 $0.08744	Buy Now
Mouser Electronics	ROX2SJ22K		8,783			1 $0.27 10 $0.17 100 $0.113 1000 $0.066 10000 $0.059	Buy Now
Newark	ROX2SJ22K	Bulk	9,950		10	1 - 10 $0.338 100 $0.136 1000 $0.067 10000 $0.061	Buy Now
TE Connectivity ROX2SJ22R RES 22 OHM 5% 2W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ROX2SJ22R	Cut Tape	5,439		1	1 $0.27 10 $0.17 100 $0.1129 1000 $0.08744 10000 $0.08744	Buy Now
	ROX2SJ22R	Ammo Pack	4,000		1,000	1 - 10 - 100 - 1000 $0.0791 10000 $0.05939	Buy Now
Mouser Electronics	ROX2SJ22R		4,000			1 - 10 - 100 - 1000 $0.065 10000 $0.059	Buy Now
Newark	ROX2SJ22R	Bulk	16,881		10	1 - 10 $0.177 100 $0.116 1000 $0.09 10000 $0.09	Buy Now
Avnet Abacus	ROX2SJ22R			17 Weeks	12,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SJ2 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
2SJ20	Unknown	FET Data Book	Scan	PDF
2SJ20	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SJ200	Toshiba	Pch Power MOSFET; ; Package: TO-3P(N); R DS On (max 0.83); I_S (A): (max -10)	Original	PDF
2SJ200	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SJ200	Toshiba	P-Channel MOSFET	Original	PDF
2SJ200	Toshiba		Original	PDF
2SJ200	Unknown	FET Data Book	Scan	PDF
2SJ200	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SJ200	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200	Toshiba	Field Effect Transistor Silicon P Channel MOS Type	Scan	PDF

2SJ200	Toshiba	Silicon P channel field effect transistor for high power amplifier applications	Scan	PDF
2SJ200-O	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200O	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y	Toshiba	2SJ200 - TRANSISTOR 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET, 2-16C1B, 3 PIN, FET General Purpose Power	Original	PDF
2SJ200Y	Toshiba	TRANS MOSFET P-CH 180V 10A 3(2-16C1B)	Scan	PDF
2SJ200-Y(F)	Toshiba	2SJ200 - MOSFET P-CH 180V 10A TO-3	Original	PDF

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2SJ2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2sj239 Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL Text: MOSFET Product Matrix VdssM * 100 1 20 60 Id A 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]	OCR Scan	2SK1112 2SK1719 2SJ239 2SK2030 2SK1079 TE12L) 2SK1078 2SJ238 2sj239 TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL	PDF
2SJ201 Abstract: 2SJ20 Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : \| Yfs \| -5.OS (TYP.) : « o -H o O (D	OCR Scan	2SJ201 2SK1530 Ta-25 2-21F1B -10mA, 2SJ201 2SJ20	PDF
2SK1118 Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220 Text: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531	OCR Scan	2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 2SK387 2SK572 2SK578 2SK1118 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220	PDF
marking PP Abstract: 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ213 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS on =4.2 MAX.@VGS=-1.0V,ID=-0.3A 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1	Original	2SJ213 OT-89 -100V -300mA marking PP 2SJ213 mosfet vgs 5v vds 100v MOSFET SMD pp	PDF
sb30-03p Abstract: 3SK181 DSE015 3SK189 Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251	OCR Scan	2SJ187 2SJ190 2SJ193 2SJ284 2SJ285 2SJ286 2SJ287 2SJ288 2SJ289 2SJ316 sb30-03p 3SK181 DSE015 3SK189	PDF
Untitled Abstract: No abstract text available Text: 2SJ225 2087 i L D L o w D riv e S e r ie s V D5S= 3 0 V P Channel Power M OSFET E 38 10 F e a tu re s •Small ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Meets radial taping. A bsolute M axim um R atings a tT a = 25°C Drain to Source Voltage	OCR Scan	2SJ225 D151MH,	PDF
Untitled Abstract: No abstract text available Text: 2SJ226 LD L o w D rive S eries VDss = 3 0 V 2085 P Channel Power M OSFET •E -381 I F e a tu re s ■Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. • Its height onboard is 9.5mm. ■Meets radial taping. A bsolute M axim um R atin g s at Ta = 25°C	OCR Scan	2SJ226 41293YK	PDF
2SJ469 Abstract: No abstract text available Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5	OCR Scan	2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469	PDF
AX8896 Abstract: No abstract text available Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage	OCR Scan	2SJ287 250mm2X 250mA ----10V 32593TH AX-8896 AX8896	PDF
Untitled Abstract: No abstract text available Text: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C	OCR Scan	2SJ232 --10V --600mA --20V s----20V 31893MH A8-7974	PDF
Untitled Abstract: No abstract text available Text: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C	OCR Scan	2SJ230 --10V --20V 31893MH A8-7975	PDF
8897 Abstract: No abstract text available Text: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage	OCR Scan	2SJ288 10//S, 250mm2X VQD--30V 250mA, --500mA, 31893TH AX-8897 8897	PDF
2SJ268 Abstract: No abstract text available Text: O rdering num ber: EN4237 _ 2SJ268 No.4237 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible.	OCR Scan	EN4237 2SJ268 2SJ268-applied	PDF
2SJ294 Abstract: 2SJ291 Text: 2SJ294 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter	OCR Scan	2SJ294 O-22QFM 2SJ291	PDF

2SJ241 Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive	OCR Scan	2SJ241 0D2157L,	PDF
2SJ284 Abstract: marking am Text: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage	OCR Scan	EN4220 2SJ284 10/ms, NS4220-3/3 marking am	PDF
TRANSISTOR bH-10 Abstract: marking BH-10 2SJ200 2SK1529 SC-65 Text: TO S H IB A 2SJ200 TO SHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ200 HIGH POWER AMPLIFIER APPLICATION U nit in mm 1 5 .9 M A X . • High Breakdown Voltage • High Forward Transfer Admittance : \|Yfs\|= 4 .0 S Typ. • Complementary to 2SK1529	OCR Scan	2SJ200 2SK1529 SC-65 2-16C1B TRANSISTOR bH-10 marking BH-10	PDF
marking H17 Abstract: SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17 Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.	Original	2SJ209 OT-23 -10mA marking H17 SMD Transistor h17 2SJ209 mosfet vgs 5v vds 100v max6017 smd h17	PDF
2SJ201 Abstract: 2SK1530 toshiba pb includes Text: 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = −200 V z High forward transfer admittance : \|Yfs\| = 5.0 S typ. z Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C)	Original	2SJ201 2SK1530 2-21F1B 2SJ201 2SK1530 toshiba pb includes	PDF
2SJ211 Abstract: N15j Text: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er	OCR Scan	2SJ211 2SJ211 N15j	PDF
EN4233 Abstract: 2SJ259 Text: Ordering number:EN4233 P-Channel Silicon MOSFET 2SJ259 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ259] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	EN4233 2SJ259 2SJ259] 2SJ259-applied EN4233 2SJ259	PDF
2SJ257 Abstract: No abstract text available Text: Ordering number:EN4242 P-Channel Silicon MOSFET 2SJ257 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ257] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.	Original	EN4242 2SJ257 2SJ257] 2SJ257-applied 2SJ257	PDF
2SJ231 Abstract: EN3816 Text: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0	Original	EN3816 2SJ231 2SJ231] 2SJ231 EN3816	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA Discrete Semiconductors 2SJ200 Field Effect Transistor 2 Silicon P Channel M O ST ype L -ti-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance	OCR Scan	2SJ200	PDF

2SJ2 Search Results

2SJ2 Price and Stock

TE Connectivity ROX2SJ27K

TE Connectivity ROX2SJ2R0

TE Connectivity ROX2SJ220K

TE Connectivity ROX2SJ22K

TE Connectivity ROX2SJ22R

2SJ2 Datasheets (500)

2SJ2 Datasheets Context Search

2sj239

2SJ201

2SK1118

marking PP

sb30-03p

Untitled

Untitled

2SJ469

AX8896

Untitled

Untitled

8897

2SJ268

2SJ294

2SJ241

2SJ284

TRANSISTOR bH-10

marking H17

2SJ201

2SJ211

EN4233

2SJ257

2SJ231

Untitled