smd marking JD
Abstract: MARKING 60 SOT-89 JD FET MARKING KEXIN 2SJ287 SOT89 FET marking
Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ287 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Low on resistance +0.1 2.50-0.1 Very high-speed switching Low-voltage drive 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 1 +0.1
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2SJ287
OT-89
-250mA
--250mA
smd marking JD
MARKING 60 SOT-89 JD
FET MARKING KEXIN
2SJ287
SOT89 FET marking
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EN4307
Abstract: 2SJ287
Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4307
2SJ287
2SJ287]
25max
EN4307
2SJ287
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2062a
Abstract: 2SJ287 ITR00374 ITR00375 ITR00376 ITR00377 ITR00388 ITR00389
Text: 注文コード No.N 4 3 0 7 A 2SJ287 No. 4 3 0 7 A 61599 半導体ニューズ No.4307 とさしかえてください。 2SJ287 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。
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2SJ287
250mm2
250mA
250mA,
--250mA
ITR00390
ITR00391
2062a
2SJ287
ITR00374
ITR00375
ITR00376
ITR00377
ITR00388
ITR00389
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2062A [2SJ287] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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EN4307
2SJ287
2SJ287]
25max
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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sb30-03p
Abstract: 3SK181 DSE015 3SK189
Text: SAfÊYO L,i s t s a n d 2SJ.3SK type, T y p e No. ma r k i ng 2 S J 187 .1 A 2 S J 19 0 J B 2 S J 19 3 .1 c A M 2 S J 284 B M 2 SJ 285 C M 2 SJ 286 2SJ287 J D 2 SJ 288 J E 2SJ289 J F 2SJ316 .1 G 2 SJ 3 3 5 J H 2SJ381 J I 3SK180 3SK181 3SK189 3SK248 3SK251
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2SJ187
2SJ190
2SJ193
2SJ284
2SJ285
2SJ286
2SJ287
2SJ288
2SJ289
2SJ316
sb30-03p
3SK181
DSE015
3SK189
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2SJ469
Abstract: No abstract text available
Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5
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2SJ284
2SJ187
2SJ287
2SJ416
2SJ188
O-220
O-220ML
2SJ189
2SJ417
2SJ418
2SJ469
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AX8896
Abstract: No abstract text available
Text: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage
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2SJ287
250mm2X
250mA
----10V
32593TH
AX-8896
AX8896
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2SJ287
Abstract: J600C
Text: Ordering number: EN 4307 No.4307 _ 2SJ287 P-Channel MOS Silicon FET Very High-Speed Switching Applications I Features • Low ON resistance. •Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain to Source Voltage
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2SJ287
250mm2
J600C
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c3807
Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4
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K2270
A1765
A1497/C3860,
A1503/C3864
A1509/C3899,
A1511/C3901
A1572/
A1574/C4070
A1582/C4113,
A1590/C4121
c3807
C3898
k443
d16810
K545
K1311
b1127
C4146
K2073
B986
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2sc3153
Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Text: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator
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2SC3151
T03PB
10to40
2SC3152
2SC3I53
2SC3277
2sc3153
2SJ335
transistor 2sc4460
2SC4427
2sc4460
2SC3448
2SC3449
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Untitled
Abstract: No abstract text available
Text: • Devices Related to Batteries and DC/DC Converters Low-saturation Transistors Absolute maximum ratings Ta = 25°C Type No. Package 2SB1295 CP VCbo V CEO (V) (V) 15 v CE(sat) Pc (W) (A) 15 Electrical characteristics (Ta = 25°C) 0.8 0.2 VCE (V) •c (A)
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2SB1295
2SB1122
2SD1622
250mm2
SB007-03Q
SB007W
SB007T03Q
FC806
SB007-03Q
SB007W03Q
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2SK2437
Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Text: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process
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MT980624TR
2SK2437
CPH3304
mosfet marking kf
78m marking
2SK2442
48M marking
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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