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    2SD879 Search Results

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    2SD879 Price and Stock

    Rochester Electronics LLC 2SD879

    TRANSISTOR
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    DigiKey 2SD879 Bulk 2,219
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    NEC Electronics Group 2SD879

    3000 MA, 10 V, NPN, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SD879 9,800
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    onsemi 2SD879

    2SD879 - Transistor '
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    Rochester Electronics 2SD879 9,500 1
    • 1 $0.13
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    • 1000 $0.1105
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    2SD879 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD879 Sanyo Semiconductor Strobe (1.5 V, 3 V) Original PDF
    2SD879 Unisonic Technologies 1.5V, 3V STROBE APPLICATIONS Original PDF
    2SD879 Various Russian Datasheets Transistor Original PDF
    2SD879 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD879 Unknown NPN epitaxial planar silicon transistor, 1,5C, 3V strobe application Scan PDF
    2SD879 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD879 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD879 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD879 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD879 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD879 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF

    2SD879 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TO-92 TRANSISTOR NPN FEATURES z In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of


    Original     		2SD879 2SD879s 750mW) PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		2SD879 2SD879 2SD879s OT-89 QW-R208-010 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		2SD879 2SD879 2SD879s OT-89 QW-R208-010 PDF

    2SD879

    Abstract: germanium transistors NPN germanium npn 92
    Text: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.


    Original     		2SD879 2SD879s 750mW) germanium transistors NPN germanium npn 92 PDF

    2sd879

    Abstract: germanium transistors NPN
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		2SD879 2SD879 2SD879s QW-R201-043 germanium transistors NPN PDF

    2SD879

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. R 2SD879 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1.5V and 3V electronic flash. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190 4.83 .170(4.33) o 2 Typ


    Original     		2SD879 2SD879 PDF

    2SD879

    Abstract: No abstract text available
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 14Ltd. 2SD879 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS „ DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. „ FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two


    Original     		2SD879 2SD879 2SD879s OT-89 QW-R208-010 PDF

    germanium transistors NPN

    Abstract: 2sd879 transistor germanium MS 3A
    Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		2SD879 2SD879 2SD879s OT-89 QW-R208-010 germanium transistors NPN transistor germanium MS 3A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS  DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications.  FEATURES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		2SD879 2SD879 2SD879s QW-R208-010 PDF

    2SD879

    Abstract: Transistor 5503
    Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.


    Original     		EN550F 2SD879 2003B 2SD879] 2SD879s 750mW) 2SD879 Transistor 5503 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1 .5 V , 3 V ST ROBE APPLI CAT I ON S ̈ DESCRI PT I ON The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. ̈ FEAT U RES * In applications where two NiCd batteries are used to provide 2.4V,


    Original     		2SD879 2SD879 2SD879s QW-R208-010 PDF

    germanium transistors NPN

    Abstract: 2SD879
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TRANSISTOR NPN FEATURES z In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of


    Original     		2SD879 2SD879s 750mW) germanium transistors NPN 2SD879 PDF

    2sd879 equivalent

    Abstract: laser diode vcd LB8118M block diagram of VCD and its functions
    Text: Ordering number: ENN5838A Monolithic Digital IC LB8118M Actuator Driver for Portable CD Players Package Dimensions The LB8118M is an actuator driver IC designed for portable CD players that operate at 2.4 V two Ni-Cd batteries or 3.0 V (two dry cells). Because the fourchannel driver control outputs are divided into two groups,


    Original     		ENN5838A LB8118M LB8118M 3148-QIP44MA LB8118M] QIP44MA 2sd879 equivalent laser diode vcd block diagram of VCD and its functions PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    Untitled

    Abstract: No abstract text available
    Text: O rdering number: EN 550E J SAW O N 0.550 E _ 2 S D 8 7 9 NPN Epitaxial Planar Silicon Transistor 1.5 V and 3 V Strobe Applications Features . In applications where two NiCd batteries are used to provide 2.4V, two 2SD879 transistors are used.


    OCR Scan     		2SD879 750mW) 5137KI/3075KI/5244KI 2SD879 I350T PDF

    kijima

    Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
    Text: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.


    OCR Scan     		EN550F 2SD879 2SD879s 750mW) kijima 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium PDF

    2SB1406

    Abstract: 2SK715
    Text: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


    OCR Scan     		2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715 PDF

    2SD915

    Abstract: 2SD877 2SD889 2SD870 2SD878 2SD873 2SD866 2SD866A 2SD867 2SD868
    Text: - 228 - m n Ta=25cC, *EP(ÏTc=25‘ C 32 2SD866 & ír £ föT ffl & PSW VcBO VcEO ICCDC) Pc Pc* (V) (V) (A) (W) (W) 130 80 7 i.CBO. (max) (/¿A) 40 . HF VcB (V) 10 100 (min) 60 M (max) 260 te Vc e (V) (Ta=25*C) (max) (V) Ic / I e (A) 2 [*EPfätyp<S] (V)


    OCR Scan     		2SD866 2SD866A 2SD867 2SD868 2SD869 2SD870 2SD871 2SD886A T0-220F 2SD888 2SD915 2SD877 2SD889 2SD870 2SD878 2SD873 2SD867 PDF

    2SB1205

    Abstract: 2SD1801
    Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.


    OCR Scan     		T0-126LP MT95C123TR 2SB1205 2SD1801 PDF

    2sc4983

    Abstract: No abstract text available
    Text: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.


    OCR Scan     		35m/25m min70lRBE min70 15m/10m typ210 SC-43 MT931228TR 2sc4983 PDF