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    2SD23 Search Results

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    2SD2383-T2B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SD23 Price and Stock

    ROHM Semiconductor 2SD2351T106V

    TRANS NPN 50V 0.15A UMT3
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    DigiKey 2SD2351T106V Cut Tape 6,861 1
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    TME 2SD2351T106V 1
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    Chip One Stop 2SD2351T106V Cut Tape 43,475
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    CoreStaff Co Ltd 2SD2351T106V 1,690
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    ROHM Semiconductor 2SD2351U3T106W

    TRANS NPN 50V 0.15A SOT-323
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    Ameya Holding Limited 2SD2351U3T106W 100 1
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    Chip One Stop 2SD2351U3T106W Cut Tape 550
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    CoreStaff Co Ltd 2SD2351U3T106W 100
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    ROHM Semiconductor 2SD2318TLV

    TRANS NPN 60V 3A CPT3
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    ROHM Semiconductor 2SD2318TLU

    TRANS NPN 60V 3A CPT3
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    Mouser Electronics 2SD2318TLU 2,105
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    Avnet Asia 2SD2318TLU 24 Weeks 2,500
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    ROHM Semiconductor 2SD2391T100Q

    TRANS NPN 60V 2A MPT3
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    DigiKey 2SD2391T100Q Cut Tape 1,151 1
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    2SD2391T100Q 70
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    2SD23 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD23 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD23 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD23 Unknown Cross Reference Datasheet Scan PDF
    2SD23 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD23 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD23 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD23 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD23 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD230 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD2300 Hitachi Semiconductor Collector to emitter voltage: 1500V emiter to base voltage: 6V 5A 50W silicon NPN triple diffused. For CTV horizontal deflection output. Original PDF
    2SD2300 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SD2300 Hitachi Semiconductor Power Bipolar Transistors Scan PDF
    2SD2300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2300 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2300 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD2300 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2sd2301 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    ...

    2SD23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD2333

    Abstract: IE-200mA
    Text: Inchange Semiconductor Product Specification 2SD2333 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output applications PINNING PIN DESCRIPTION


    Original
    2SD2333 100mA; 200mA 2SD2333 IE-200mA PDF

    2SB1559

    Abstract: 2SD2389
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original
    2SB1559 2SD2389 2SB1559 2SD2389 PDF

    2SB1565

    Abstract: 2SD2394
    Text: JMnic Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394 PINNING PIN


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    2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394 PDF

    2SD2389

    Abstract: audio Darlington 6A 2SB1559
    Text: Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SB1559 2SD2389 2SD2389 audio Darlington 6A 2SB1559 PDF

    2SB1558

    Abstract: 2SD2387
    Text: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SB1558 2SD2387 2SB1558 2SD2387 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2324 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Contains a diode between colletor and emitter. 0.4 3 Low saturation voltage. 1 0.55 Contains a bias resistor between base and emitter.


    Original
    2SD2324 OT-23 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD2359 Features Low collector-emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25


    Original
    2SD2359 PDF

    2SB1565

    Abstract: 2SD2394
    Text: SavantIC Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2394


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    2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394 PDF

    2SB434

    Abstract: 2SD234
    Text: SavantIC Semiconductor Product Specification 2SB434 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD234 APPLICATIONS ·For low frequency power amplifier and switching applications PINNING PIN DESCRIPTION Fig.1 simplified outline TO-220 and symbol


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    2SB434 O-220 2SD234 O-220) 2SB434 2SD234 PDF

    2SD2390

    Abstract: 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION


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    2SD2390 2SB1560 2SD2390 2SB1560 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON PDF

    2SD2386

    Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


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    2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS PDF

    2SB1568

    Abstract: 2SD2399
    Text: SavantIC Semiconductor Product Specification 2SB1568 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications


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    2SB1568 O-220F 2SD2399 O-220F) 10MHz 2SB1568 2SD2399 PDF

    2SB1566

    Abstract: 2SD2395
    Text: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395


    Original
    2SB1566 O-220F 2SD2395 O-220F) current-p50 2SB1566 2SD2395 PDF

    2SB1567

    Abstract: 2SD2398
    Text: SavantIC Semiconductor Product Specification 2SB1567 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION


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    2SB1567 O-220F 2SD2398 O-220F) -100V 2SB1567 2SD2398 PDF

    2SB1538

    Abstract: 2SD2358
    Text: Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features 0.65 max. 14.5±0.5 • Low collector to emitter saturation voltage VCE sat : < 0.15 V • Allowing supply with the radial taping


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    2SD2358 2SB1538 2SB1538 2SD2358 PDF

    2SD2345

    Abstract: No abstract text available
    Text: Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 1.6±0.15 ● 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . High emitter to base voltage VEBO.


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    2SD2345 55nductor 2SD2345 PDF

    2SB435

    Abstract: 2SD235
    Text: 2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    2SD235 O-220 2SB435 2SB435 2SD235 PDF

    2SD2343

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343


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    2SC4132 2SD1857 2SD2343 2SC4132 80MHz) 2SB1236. 2SD2343 2SB1236 T100 PDF

    2SD2345J

    Abstract: SC-89 VEBO-15V
    Text: Transistors 2SD2345J Silicon NPN epitaxial planar type For low frequency amplification Rating Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 15 V Collector current


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    2SD2345J 2SD2345J SC-89 VEBO-15V PDF

    2-16C1A

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO


    OCR Scan
    --140V 2SD2387 100fl -140V --50mA, --12A 2-16C1A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan
    2SB1555 2SD2384 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SD2337 Silicon NPN Triple Diffused HITACHI Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB1530 Outline T O -2 2 0 F M A In 1 2 1. B a se 2. C o lle c to r 3. E m itte r 2SD2337 Absolute Maximum Ratings Ta = 25 °C


    OCR Scan
    2SD2337 2SB1530 D-85622 PDF

    2SD234

    Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
    Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t


    OCR Scan
    2so234 2sd235 2SB434, ZSB434 2SB435. 2SD234 220AB 2SD235 2SD235 Toshiba SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4 PDF

    2SB1557

    Abstract: 2SD2386
    Text: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    2SB1557 2SD2386 2SB1557 PDF