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    2SD1857 Search Results

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    2SD1857 Price and Stock

    ROHM Semiconductor 2SD1857TV2Q

    TRANS NPN 120V 2A ATV
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    ROHM Semiconductor 2SD1857TV2P

    TRANS NPN 120V 2A ATV
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    ROHM Semiconductor 2SD1857TV2R

    TRANS NPN 120V 2A ATV
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    ROHM Semiconductor 2SD1857ATV2Q

    TRANS NPN 160V 1.5A ATV
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    ROHM Semiconductor 2SD1857ATV2P

    TRANS NPN 160V 1.5A ATV
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    2SD1857 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1857 ROHM Power Transistor (120V, 1.5A) Original PDF
    2SD1857 ROHM Power Transistor Original PDF
    2SD1857 ROHM Power Transistor (120V, 1.5A) Original PDF
    2SD1857 Unisonic Technologies POWER TRANSISTOR Original PDF
    2SD1857 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1857 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1857 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1857 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1857 ROHM Power Transistor (120V, 1.5A) Scan PDF
    2SD1857 ROHM Power Transistor (120V, 1.5A) Scan PDF
    2SD1857 ROHM ATR, ATV Transistors Scan PDF
    2SD1857 ROHM ATR / ATV Transistors Scan PDF
    2SD1857A ROHM Original PDF
    2SD1857A ROHM Power Transistor (160V , 1.5A) Original PDF
    2SD1857A ROHM ATR, ATV Transistors Scan PDF
    2SD1857A ROHM Power Transistor (160V 1.5A) Scan PDF
    2SD1857A ROHM ATR / ATV Transistors Scan PDF
    2SD1857ATV2P ROHM Power Transistor (160 V , 1.5 A) Original PDF
    2SD1857ATV2P ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS DVR NPN 160V 1.5A ATV TB Original PDF
    2SD1857ATV2Q ROHM Power Transistor (160 V , 1.5 A) Original PDF

    2SD1857 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


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    PDF 2SD1857 80MHz) 30MHz. QW-R201-057

    2SD1875

    Abstract: 2Sd-1875
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


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    PDF 2SD1857 80MHz) 2SD1875L-x-T92-B 2SD1875G-x-T92-B 2SD1875L-x-T92-K 2SD1875G-x-T92-K 2SD1875L-x- T92-R 2SD1875G-x- 2SD1875 2Sd-1875

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


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    PDF 2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B

    100V 2A MPT3

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 2A 2SC4132 / 2SD1857 zDimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)


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    PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. SC-62 100V 2A MPT3 2SB1236 2SD1857 T100

    2SD2343

    Abstract: 2SB1236 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 !External dimensions (Units : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 2SC4132 Collector power dissipation 2 2SD1857 2SD2343


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    PDF 2SC4132 2SD1857 2SD2343 2SC4132 80MHz) 2SB1236. 2SD2343 2SB1236 T100

    2SD1918

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1


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    PDF 2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A

    2SB1236

    Abstract: 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC PC 2 1 W Tj Tstg 150 −55 to +150 °C °C Collector current Collector power dissipation


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    PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 2SB1236 2SD1857 T100

    2SD1857

    Abstract: RE11
    Text: SPICE PARAMETER 2SD1857 by ROHM TR Div. * 2SD1857 NPN BJT model * Date: 2006/11/20 .MODEL 2SD1857 NPN + IS=450.00E-15 + BF=90.847 + VAF=7.7000 + IKF=1.9224 + ISE=450.00E-15 + NE=1.4462 + BR=84.284 + VAR=100 + IKR=.28392 + ISC=2.3425E-9 + NC=1.8142 + NK=.67816


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    PDF 2SD1857 Q2SD1857 00E-15 3425E-9 932E-3 88E-12 705E-12 8687E-9 2SD1857 RE11

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251


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    PDF 2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K

    2SB1186

    Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
    Text: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276


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    PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 94L-268-A56) 96-175-C56) 2SB1186 2sb1186 equivalent 2SD1763

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


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    PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    2SB1236

    Abstract: 2SC4132 2SD1857 T100
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 2SC4132 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) VEBO IC 5 2 ICP 3 0.5 PC 2 Collector current 2SC4132 Collector power dissipation Junction temperature


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    PDF 2SC4132 2SD1857 2SC4132 80MHz) 2SB1236. 2SB1236 2SD1857 T100

    2SD1857L

    Abstract: 2SD1857
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L


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    PDF 2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857

    Model 450

    Abstract: 2SD1857A
    Text: SPICE PARAMETER 2SD1857A by ROHM TR Div. * 2SD1857A NPN BJT model * Date: 2006/11/20 .MODEL 2SD1857A NPN + IS=450.00E-15 + BF=101.86 + VAF=9.5235 + IKF=2.0711 + ISE=450.00E-15 + NE=1.4191 + BR=22.448 + VAR=100 + IKR=.96913 + ISC=31.986E-12 + NC=1.3523 + NK=.68874


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    PDF 2SD1857A Q2SD1857A 00E-15 986E-12 067E-3 88E-12 705E-12 8667E-9 Model 450 2SD1857A

    TO92NL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


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    PDF 2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL

    2SD1857L

    Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L


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    PDF 2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz

    2SB1236

    Abstract: 2SD1857
    Text: Power Transistor 120V, 2A 2SD1857 zDimensions (Unit : mm) 2SD1857 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)


    Original
    PDF 2SD1857 65Max. 80MHz) 2SB1236. 2SB1236 2SD1857

    Untitled

    Abstract: No abstract text available
    Text: / T ransistors 2SD1665M/2SD1857 h -7 > V *$ 2SD1665M I t N P NPower'>•;=!> Amp. 2SD1857 Epitaxial Planar NPN Silicon Transistors sir >J V; V d i-r • W K \ l i ± [ 3 / Dinlens' ons U n it: mm 1) is] H E 7 &-5 (BVceo = 120V)o 2) f T i^ i *\ , Cob^F 'f&t'vo


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    PDF 2SD1665M/2SD1857 2SD1665M 2SD1857 1130M 1236t 2SB1130M, 2SB1236.

    2SD1665

    Abstract: 2SD1857A
    Text: 2SD1665AM/2SD1857A h -p > v ^ £ /T ra n s is to rs 2SD1665AM 2SD1857A • X tf £ y 7 JU7° \s — NPN y>J = l> Epitaxial Planar NPN Silicon Transistors Power Amp. WA \f&[3l/Dimensions Unit : mm « 1) iHiiW15T&#39;<fc 5 o 2SD1665AM B V ceo=160V 2 ) f T* ' < ,


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    PDF 2SD1665AM/2SD1857A 2SD1665AM 2SD1857A iHiiW15T 2SD1665AM 2SB1130AM, 2SB1236A 2SD1665 2SD1857A

    d1763a

    Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )


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    PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a B 1186a 1569a

    2SD1857A

    Abstract: No abstract text available
    Text: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A


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    PDF 2SB1236A 2SD1857A 2SB1236A

    d2400a

    Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s


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    PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A d2400a transistor d2400a 2SD1916 2SD1763A SD1763A

    2sd1763

    Abstract: No abstract text available
    Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)


    OCR Scan
    PDF 2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763

    2SB1275

    Abstract: 2SB1236A 2SD1918
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor -1 6 0 V , - 1 .5A 2SB127512SB1236A •Features 1) High breakdown voltage.(BVcEO = -1 60V) 2) Low collector output capacitance. (Typ. 30pF at V cb = 10V) 3) High transition frequency.(fr = 50MHz) 4) Complements the 2SD1918/2SD1857A.


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    PDF 2SB1275 2SB1236A -160V, 2SB127512SB1236A -160V) 30pFatVcB 50MHz) 2SD1918 /2SD1857A. 2SB1275 2SB1236A