2-21F1A
Abstract: 2SB1555 2SD2384
Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2384
2SB1555
2-21F1A
2-21F1A
2SB1555
2SD2384
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2sd2384
Abstract: 2-21F1A 2SB1555 ic3006
Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics
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2SD2384
2SB1555
2-21F1A
2sd2384
2-21F1A
2SB1555
ic3006
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2sb1555
Abstract: No abstract text available
Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SB1555
2SD2384
2sb1555
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Untitled
Abstract: No abstract text available
Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SD2384
2SB1555
2-21F1A
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2-21F1A
Abstract: 2SB1555 2SD2384
Text: 2SB1555 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1555 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2384 Maximum Ratings (Tc = 25°C) Characteristics Symbol
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2SB1555
2SD2384
2-21F1A
2-21F1A
2SB1555
2SD2384
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2-21F1A
Abstract: 2SB1555 2SD2384 A-8250
Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SD2384
2SB1555
2-21F1A
2-21F1A
2SB1555
2SD2384
A-8250
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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darlington transistor power
Abstract: 2SB1555 2SD2384
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High DC Current Gain: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications
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-140V
2SD2384
-140V
darlington transistor power
2SB1555
2SD2384
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)
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2SB1555
2SD2384
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2SB1555
Abstract: 2-21F1A 2SD2384
Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SB1555
--140V
2SD2384
2SB1555
2-21F1A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2384
--140V
2SB1555
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SB1555 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR i <; r 1 *5 <5 <5 O POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : V q e q = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 2 5°C)
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2SB1555
--140V
2SD2384
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S D 2 3 84 High Breakdown Voltage : VcEO = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2384
2SB1555
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tr5v
Abstract: 2-21F1A 2SB1555 2SD2384
Text: TOSHIBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SB1555
--140V
2SD2384
tr5v
2-21F1A
2SB1555
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2-21F1A
Abstract: 2SB1555 2SD2384
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SD2384
2SB1555
2-21F1A
2SD2384
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Untitled
Abstract: No abstract text available
Text: 2SB1555O SILICON PNP EPITAXIAL TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIONS • High Breakdown Voltage : V q e O = —140V (Min.) • Complementary to 2SD2384 M A X IM U M RATINGS (Ta * 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO VCEO -1 4 0 -1 4 0
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2SB1555O
--140V
2SD2384
2SB1555
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2-21F1A
Abstract: 2SB1555 2SD2384
Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2384 PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = 140V (Min.) Complementary to 2SB1555 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2384
2SB1555
Emit00
2-21F1A
2SD2384
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2-21F1A
Abstract: 2SB1555 2SD2384
Text: TO SH IBA TOSHIBA TRANSISTOR 2SD2384 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2384 High Breakdown Voltage : V^ e o = 140V (Min.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2384
2SB1555
2-21F1A
2SD2384
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2-21F1A
Abstract: 2SB1555 2SD2384
Text: TO SH IBA 2SB1555 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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2SB1555
2SD2384
2-21F1A
2SB1555
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C3182N
Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Text: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn
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2SA51
2SA57
2SC3281
2SD1571
C3182N
C3888A
2sd 3420
2SC2268
2sc2073-2
EP 1408
3884A
3182N
2SD 388A
2SA855
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2SA1163
Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry
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2SB1575
2SA1825
2SB1576
2SA1896
2SA1736
2SB1574
2SA1T53
2SAU82
2SA1121
2SA1366
2SA1163
2SB1255
2SB1576
2SA1736
2SB1253
2SB1575
2SA1121
2SA1257
2SA1366
2SA1825
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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