2SD227 Search Results

2SB1503

Abstract: 2SD2276
Contextual Info: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

Contextual Info: TO SHIBA 2SD2271 TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR MOTOR DRIVE APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 • • High DC Current Gain : hjrj; = 500 (Min.) (V q e = 2V, Iq = 5A)

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

Contextual Info: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage

2SD2276

Abstract: 2SB1503
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage

2SB1503

Abstract: 2SD2276 2sb15
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage

2SB1503

Abstract: 2SD2276 darlington power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS

Contextual Info: 2SD2279 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SD2271

Contextual Info: T O S H IB A 2SD2271 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR Unit in mm MOTOR DRIVE APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS • • 10 + 0.3 , f 3.2 ± 0 . 2 2.7±02 High DC Current Gain : hpE = 500 (Min.) (Vq e = 2V, 1^ = 5A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2271 TENTATIVE DATA Unit in mm MOTOR DRIVE.APPLICATIONS. HIGH CURRENT SWITCHING APPLICATIONS. 10±0.3 ¿ 3.2Í 0.2 • High DC Current Gain : hpE=500 (Min.) (Vce=2V, Iq =5A) ■ High Breakdown Voltage : V q e o (SUS)=200V (Min.)

Contextual Info: Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage

D2271

Abstract: transistor d2271 2SD2271
Contextual Info: 2SD2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)

2SB1502

Abstract: 2SD2275 2sb15
Contextual Info: Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120

2SD2271

Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON POWER TRANSISTOR MOTOR DRIVE APPLICATIONS 2SD2271 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS r High DC Current Gain : hFE = 500 (Min.) (VCE = 2V, Ic = 5A) High Breakdown Voltage : V ^ eq (S U S )~ 2 0 0 V (Min.)

2SB1503

Abstract: 2SD2276
Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160

2SB1502

Abstract: 2SD2275
Contextual Info: Power Transistors 2SD2275 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage

2SB1502 TRANSISTOR

Abstract: 2SB1502 2SD2275
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS

Contextual Info: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow

Contextual Info: Power Transistors 2SB1501 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2274 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 4.0 6.0 3.0 20.0±0.5 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage

2SD227

Abstract: 2SA642 251C hFE-150
Contextual Info: 2SD227 2SD227 NPN X 7 j uf ëi / IJ 3 V h ^ V v X ^ / N P N SILICON EPITAXIAL TRANSISTOR ^3 S j± S ^]lilli f f l/ A u c li o Frequency A m p lifie r f t ^ /F E A T U R E S W M /P A C K A G E DIMENSIONS 500mw iigïH#3 f» • 2SA642 i ; 3 v y j ^ y f Suitable for output applications of 500mW portable radios in class B

2SD2271

Contextual Info: TO SH IBA SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON POWER TRANSISTOR MOTOR DRIVE APPLICATIONS 2SD2271 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -*i< o f r • • High DC Current Gain : hFE = 500 (Min.) (VCE = 2V, Ic = 5A)