2SB1494
Abstract: 2SD2256 DSA003644
Text: 2SB1494 Silicon PNP Triple Diffused ADE-208-878 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C)
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2SB1494
ADE-208-878
2SD2256
2SB1494
2SD2256
DSA003644
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Hitachi DSA001650
Abstract: 2SB1494
Text: 2SD2256 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current VCEO = 120 V, IC = 25 A • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange)
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2SD2256
2SB1494
D-85622
Hitachi DSA001650
2SB1494
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2SB1494
Abstract: 2SD2256 Hitachi DSA00398
Text: 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1494
2SD2256
2SB1494
2SD2256
Hitachi DSA00398
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2SB1494
Abstract: 2SD2256 DSA003645
Text: 2SD2256 Silicon NPN Triple Diffused ADE-208-928 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline
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2SD2256
ADE-208-928
2SB1494
2SB1494
2SD2256
DSA003645
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Hitachi DSA002787
Abstract: No abstract text available
Text: 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1494
2SD2256
D-85622
Hitachi DSA002787
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1494
2SD2256
D-85622
Hitachi DSA00276
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2SB1494
Abstract: 2SD2256
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1494
2SD2256
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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D-85622
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transistor 2SB618
Abstract: 3A/fllnm 80
Text: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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2SA733
2SJ74
2SK170
2SJ76
2SK213
2SJ77
2SK214
2SJ103
2SK246
2SJ109
transistor 2SB618
3A/fllnm 80
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2SB1494
Abstract: 2SD2256
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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D-85622
2SB1494
2SD2256
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2SB1494
Abstract: 2SD2256
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
2SB1494
2SD2256
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2SD2256
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications.
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250mA
2SD2256
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Untitled
Abstract: No abstract text available
Text: 2SB1494 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary Pair with 2SD2256 Outline 2SB1494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to base voltage ^C B O -1 2 0 V 20 V C ollector to em itter voltage
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2SB1494
2SD2256
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PC1-120
Abstract: 2SD2256 2SB1494 low sat
Text: HITACHI 2SD2256-Silicon NPN Triple Diffused Low Frequency power Am plifier Complementary pair with 2SB1494 Feature • High breakdown voltage and High current v CEO= 120V,Ic = 25A * Built-in C -E diode Absolute Maximum Ratings (Ta = 25°C) Item
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2SD2256
2SB1494
PC1-120
2SD2256
2SB1494
low sat
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2SD2232
Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281
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2SD2230
2SD2232
2SD2233
2SD2234
2SD2240
2SD2242
2SD2242A
2SB1500
2SD221
2SB1501
2sb1492
2SD2255
2SD2233
2SD2234
2SD2247
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2SB1494
Abstract: 2SD2256
Text: HITACHI 2SB1494- -Silicon PNP Triple Diffused Low Frequency Power A m plifier Complementary Pair with 2SD2256 Feature * H ig h V oltage and H ig h C u rre n t V CEO = - , 2 0 V * lc = " 25 a • B u ilt- in C -E d iod e Absolute M axim um Ratings (Ta - 25°C)
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2SB1494
2SD2256
-I20V.
lc--12A,
3iJ50
2SB1494
2SD2256
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B1494
Abstract: No abstract text available
Text: HITACHI 2SB1494 Silicon PNP Triple Diffused Low Frequency Power Amplifier Complementary Pair with 2SD2256 Feature TO-3P ♦ H igh Voltage and H igh Current <v CEO = ~ ! 2 0 V . IC = - 2 5 A • B u ilt-in C -fi diode Absolute Maximum Ratings Ta = 25°C)
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2SB1494
2SD2256
2SBI494
B1494
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Untitled
Abstract: No abstract text available
Text: 2SB1494 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary Pair with 2SD2256 Outline 2SB1494 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B G -1 2 0 V Collector to em itter voltage
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2SB1494
2SD2256
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Untitled
Abstract: No abstract text available
Text: 2SD2256 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current VCE0 = 120 V, Ic = 25 A • Built-in C-E diode Outline T O -3 P 2SD2256 Absolute Maximum Ratings (Ta = 25 °C)
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2SD2256
2SB1494
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2SB1494 2SD2256
Abstract: 2SD2256
Text: HITACHI 2SD2256 Silicon NPN Tripie Diffused Low Frequency power Amplifier Complementary pair with 2SB1494 Feature TO-3P • High breakdown voltage and High current V CE0 = 120 V, Ic = 25A * B uilt-in C -E diode Absolute Maximum Ratings (Ta = 25°C) Item
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2SD2256
2SB1494
2SB1494 2SD2256
2SD2256
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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transistor 2sk
Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Text: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k
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2SD16
2SD1603
2SD1604
2SD1605
2SD1606
2SD1756
2SD1976
2SB1389
2SB1390
2SB1391
transistor 2sk
transistor sp-10 4ac14
2SK157
transistor 2sk 70
2sj318
transistor 2sk 12
2SK2851
4AC14
TRANSISTOR 2sK 135
K 2796
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2SC1885
Abstract: 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 736a 2sd1047 Toshiba 2sc2565 2SD427 2SD525
Text: - € m & T y p e No. 2SD 725 * 2SD 726 * 2SD 727 * * 2SD 7 2 4 _ ^ ^ ^ •ft cn * * s Manuf. = a * SANYO 2SD823 TOSHIBA fi i tö T 2SD716 2SD 728 -V &' T 2SD718 2SD 729 fi 2SD 729H 2SD 730 2SD 730H 2SD 731 * 2SD 732 * 2SD 733 V = * MITSUBISHI □— A ROHM
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2SD725
2SD726
2SD727
2SD823
2SD2233
2SD821
2SD1060
2SD525
2SD716
2SD718
2SC1885
2Sc2565
2SD551
IL 741
2SC2565 fujitsu
736a
2sd1047
Toshiba 2sc2565
2SD427
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