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    2SD2240 Price and Stock

    JRH Electronics TW-06-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-06-02-S-D-224-078 Bulk 151 1
    • 1 $6.93
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    • 1000 $3.18182
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    JRH Electronics TW-15-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-15-02-S-D-224-078 Bulk 79 1
    • 1 $12.65
    • 10 $11.691
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    JRH Electronics TW-14-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-14-02-S-D-224-078 Bulk 79 1
    • 1 $11.82
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    JRH Electronics TW-20-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-20-02-S-D-224-078 Bulk 57 1
    • 1 $16.87
    • 10 $15.6
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    JRH Electronics TW-25-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-25-02-S-D-224-078 Bulk 57 1
    • 1 $21.09
    • 10 $19.491
    • 100 $13.2546
    • 1000 $13.2546
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    2SD2240 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2240 Panasonic NPN Transistor Original PDF
    2SD2240 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2240 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2240 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2240A Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2240A Panasonic NPN Transistor Original PDF
    2SD2240A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2240ALQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2240ALR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2240J Panasonic Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Original PDF
    2SD2240JRL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 150VCEO 50MA SSMINI-3 Original PDF
    2SD2240PQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2240PR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    2SD2240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD2240G

    2SD2240

    Abstract: 2SD2240A SC-75
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Unit 150 V VCBO 2SD2240A 185 150 V Collector-emitter voltage 2SD2240


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 SC-75 2SD2240 2SD2240A SC-75

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89

    2SD2240

    Abstract: 2SD2240A SC-75
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 2SD2240 Collector-base voltage Emitter open


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 SC-75 2SD2240 2SD2240A SC-75

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J

    2SD2240

    Abstract: 2SD2240A SC-75 2SD224
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features ■ Absolute Maximum Ratings Ta = 25°C VCBO 2SD2240A Unit 150


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 2SD2240 2SD2240A SC-75 2SD224

    2SD2240

    Abstract: 2SD2240A panasonic transistor marking pr
    Text: Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 1.6±0.15 0.4 0.5 1 3 0.5 ● High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 2SD2240 2SD2240A panasonic transistor marking pr

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO


    Original     		PDF 2SB1463 2SD2240 SC-75

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SD2240G

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		PDF 2SB1463 2SD2240 2SB1463 2SD2240

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 1.6±0.15 • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		PDF 2SB1463 2SD2240 2SB1463 2SD2240

    2SD2240

    Abstract: 2SD2240A
    Text: Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 1.6±0.15 0.4 0.5 1 3 0.5 ● High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 2SD2240 2SD2240A

    2SB1463

    Abstract: 2SD2240 SC-75 SJC00089BED
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2SB1463 2SD2240 2SB1463 2SD2240 SC-75 SJC00089BED

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Package • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV


    Original     		PDF 2002/95/EC) 2SD2240G

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89

    2SB1463

    Abstract: 2SD2240
    Text: Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 Unit: mm 0.2+0.1 –0.05 3 Symbol Ratings Unit VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage


    Original     		PDF 2SB1463 2SD2240 2SB1463 2SD2240

    SC-75

    Abstract: 2SB1463 2SD2240
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SB1463 2SD2240 SC-75 2SB1463 2SD2240

    2SB1463

    Abstract: 2SD2240 SC-75 SSMini3-G1
    Text: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB1463 2SD2240 SC-75 2SB1463 2SD2240 SC-75 SSMini3-G1

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


    OCR Scan     		PDF 2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526