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    JRH Electronics TW-06-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-06-02-S-D-224-078 Bulk 151 1
    • 1 $6.93
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    JRH Electronics TW-15-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-15-02-S-D-224-078 Bulk 79 1
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    • 10 $11.691
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    JRH Electronics TW-14-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-14-02-S-D-224-078 Bulk 79 1
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    JRH Electronics TW-20-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-20-02-S-D-224-078 Bulk 57 1
    • 1 $16.87
    • 10 $15.6
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    JRH Electronics TW-25-02-S-D-224-078

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-25-02-S-D-224-078 Bulk 57 1
    • 1 $21.09
    • 10 $19.491
    • 100 $13.2546
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    2SD224 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD224 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD224 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD224 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD224 Unknown Cross Reference Datasheet Scan PDF
    2SD224 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD224 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SD224 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD224 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD224 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2240 Panasonic NPN Transistor Original PDF
    2SD2240 Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2240 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2240 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2240A Panasonic Silicon NPN epitaxial planer type Original PDF
    2SD2240A Panasonic NPN Transistor Original PDF
    2SD2240A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2240ALQ Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2240ALR Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SD2240J Panasonic Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SB1463J Original PDF

    2SD224 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240G Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification • Features ■ Package • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SD2240G

    2SD2249

    Abstract: DSA003719 5021H
    Text: Transistor 2SD2249 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.05 2.5±0.1 ±0.05 1.0 1.0 14.5±0.5 +0.1 0.45–0.05 • Absolute Maximum Ratings * 0.65 max. Ta=25˚C 2.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD2249 2SD2249 DSA003719 5021H

    2SD2242

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2242 Silicon NPN triple diffusion planar type darlington Unit: mm 4.2±0.2 For power amplification 10.0±0.2 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SD2242 2SD2242

    Untitled

    Abstract: No abstract text available
    Text: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)


    Original     		PDF 2SD2248

    2SD2249

    Abstract: No abstract text available
    Text: Transistors 2SD2249 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.5 0.65 max. 14.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply.


    Original     		PDF 2SD2249 2SD2249

    D2241

    Abstract: TRANSISTOR D2241 2SD2241 2SB1481
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SD2241 2SB1481

    TRANSISTOR D2241

    Abstract: D2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SD2241 2SB1481 TRANSISTOR D2241 D2241

    2SD2240

    Abstract: 2SD2240A SC-75
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Unit 150 V VCBO 2SD2240A 185 150 V Collector-emitter voltage 2SD2240


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 SC-75 2SD2240 2SD2240A SC-75

    D2241

    Abstract: TRANSISTOR D2241 2SB1481 2SD2241
    Text: 2SD2241 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SD2241 2SB1481 D2241 TRANSISTOR D2241 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 B1481 2SB1481 2SD2241

    B1481

    Abstract: 2SB1481 2SD2241 2SB148
    Text: 2SB1481 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241


    Original     		PDF 2SB1481 2SD2241 -55oducts B1481 2SB1481 2SD2241 2SB148

    2SB1463J

    Abstract: 2SD2240J SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J 2SB1463J 2SD2240J SC-89

    2SB1481

    Abstract: 2SD2241
    Text: SavantIC Semiconductor Product Specification 2SB1481 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2241 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications


    Original     		PDF 2SB1481 O-220F 2SD2241 O-220F) -100V 2SB1481 2SD2241

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm 4.2±0.2 Parameter Symbol Collector to base voltage 2SD2242 Collector to emitter voltage 2SD2242 Rating VCBO VCEO V 90˚ 0.65±0.1 0.35±0.1 60 1.05±0.1 VEBO


    Original     		PDF 2SD2242, 2SD2242A 2SD2242

    FE2.1

    Abstract: 2SD2242 2SD2242A 13002 npn
    Text: Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 5.0±0.1 • Features ■ Absolute Maximum Ratings Parameter Collector to 2SD2242 base voltage 2SD2242A Collector to 2SD2242 emitter voltage 2SD2242A


    Original     		PDF 2SD2242, 2SD2242A 2SD2242 FE2.1 2SD2242 2SD2242A 13002 npn

    2SD2249

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2249 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 6.9±0.1 4.0 ue pl d in an c se ed lud pl vi an m m es si


    Original     		PDF 2002/95/EC) 2SD2249 2SD2249

    2SD2240

    Abstract: 2SD2240A SC-75
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 2SD2240 Collector-base voltage Emitter open


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 SC-75 2SD2240 2SD2240A SC-75

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2240J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SB1463J 0.12+0.03 –0.01


    Original     		PDF 2002/95/EC) 2SD2240J 2SB1463J

    2SD2240

    Abstract: 2SD2240A SC-75 2SD224
    Text: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features ■ Absolute Maximum Ratings Ta = 25°C VCBO 2SD2240A Unit 150


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 2SD2240 2SD2240A SC-75 2SD224

    2SD2240

    Abstract: 2SD2240A panasonic transistor marking pr
    Text: Transistor 2SD2240, 2SD2240A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 1.6±0.15 0.4 0.5 1 3 0.5 ● High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment


    Original     		PDF 2SD2240, 2SD2240A 2SD2240 2SD2240 2SD2240A panasonic transistor marking pr

    2SD2232

    Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
    Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281


    OCR Scan     		PDF 2SD2230 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SB1500 2SD221 2SB1501 2sb1492 2SD2255 2SD2233 2SD2234 2SD2247

    2SB1481

    Abstract: 2SD2241 equivalent of 2sd2241
    Text: TO SH IBA 2SD2241 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2241 SWITCHING APPLICATIONS U n it in mm 10 ± 0 .3 ^ 3 .2 ± 0.2 2.7±Q 2 r • H igh DC Current Gain : hpE = 2000 Min. • Low Saturation Voltage : V ç;e (sat) = 1.5V (Max.) C*) cn CO


    OCR Scan     		PDF 2SD2241 2SB1481 2SB1481 2SD2241 equivalent of 2sd2241

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


    OCR Scan     		PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526