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    Panasonic Electronic Components 2SD20640S

    TRANS NPN 120V 6A TOP-3F
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    2SD2064 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2064 Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD2064 Panasonic NPN Transistor Original PDF
    2SD2064 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2064 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2064 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2064 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2064 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD20640S Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 120VCEO 6A TOP-3F Original PDF
    2SD2064Q Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD2064S Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD2064 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1371

    Abstract: 2SD2064
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS


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    PDF 2SB1371 -120V 2SD2064 -120V; -20mA; 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING


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    PDF 2SB1371 2SD2064 -20mA 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current


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    PDF 2SD2064 2SB1371 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C


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    PDF 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage


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    PDF 2SD2064 2SB1371 500mA 400mA 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter


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    PDF 2002/95/EC) 2SD2064 2SB1371

    2SB1371

    Abstract: 2SD2064
    Text: JMnic Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification PINNING PIN DESCRIPTION


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    PDF 2SB1371 2SD2064 -120V; -20mA 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage


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    PDF 2SD2064 2SB1371 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current


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    PDF 2SD2064 2SB1371 2SB1371 2SD2064

    2SB1371

    Abstract: 2SD2064
    Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current


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    PDF 2SB1371 2SD2064 2SB1371 2SD2064

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    943P

    Abstract: No abstract text available
    Text: Power T ransistors 2SD20Ó4 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n i t I mm 5 .2 m a x . Ì /3 .2 , 1 5 .5 m a x . • Features 6 .9 m m . • V ery good lin earity of DC c u r re n t gain hFE


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    PDF 2SD20Ã 2SD2064 2SB1371 bT32052 DDlbT44 943P

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2064 c->o • Features 6.9min. -f- • V ery g oo d lin e a rity o f D C c u r r e n t gain hpE • H igh tra n sitio n fre q u e n c y (f-r)


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    PDF 2SB1371 2SD2064

    943P

    Abstract: ic 941 2SB1371 2SD2064
    Text: Power Transistors 2SD2064 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n it I mm . 1 5 .5 m ax. • Features 5 .2 m a x . Ì/3 .2 6 .9 m m . * • V e ry g o o d lin e a r ity o f D C c u r r e n t g a in h FE


    OCR Scan
    PDF 2SD2064 2SB1371 D01fc bT32652 943P ic 941 2SB1371 2SD2064

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


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    PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    2SC263A

    Abstract: 2sc2078 2SC2320 2SC763 2SC2989 2SC3393 2SC3360 2sc2238 2SC710 2SC1663
    Text: - 120 - M £ Type No. 2SC 1650 a— h 2SC 1651 ^ 2SC 1652 a— U □— A 2SC 2SC 2SC 2SC 1653 ^ 1654 1655 16 5 5A a a s a a « 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1656 1657 1658 * 1659 1660 1661 1662 1663 4 1664 2SC 1665 2SC 1667 2SC 1668 2SC 2SC 2SC 2SC


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    PDF 2SC2909 2SC263Ã 2SC4218 2SC263A 2SC3393 2SC1317 2SC3143 2SC3138 2SD814 2SC3722K 2SC263A 2sc2078 2SC2320 2SC763 2SC2989 2SC3393 2SC3360 2sc2238 2SC710 2SC1663

    2S0880

    Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
    Text: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U


    OCR Scan
    PDF 2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD313 2SC79Ã 2SD390 2S0880 2SD427 SD 338 2Sd428 2sd880 2SD2023 2SC2320 2SC1815

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


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    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275