2SB1371
Abstract: 2SD2064
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 APPLICATIONS
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2SB1371
-120V
2SD2064
-120V;
-20mA;
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: SavantIC Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING
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2SB1371
2SD2064
-20mA
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO
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2SB1371
2SD2064
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current
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2SB1371
2SD2064
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current
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2SD2064
2SB1371
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD2064 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO
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2SB1371
2SD2064
2SB1371
2SD2064
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C
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2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Inchange Semiconductor Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification
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2SB1371
2SD2064
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage
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2SD2064
2SB1371
500mA
400mA
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm ● ● • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage
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2SB1371
2SD2064
2SB1371
2SD2064
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 (0.7) 15.0±0.3 (3.2) 21.0±0.5 16.2±0.5 1 Parameter
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2002/95/EC)
2SD2064
2SB1371
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2SB1371
Abstract: 2SD2064
Text: JMnic Product Specification 2SB1371 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD2064 ・High transition frequency ・Satisfactory linearity of hFE APPLICATIONS ・For high power amplification PINNING PIN DESCRIPTION
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2SB1371
2SD2064
-120V;
-20mA
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm ● ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage
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2SD2064
2SB1371
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1371 5.0±0.2 3.2 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip • Excellent collector current IC characteristics of forward current
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2SD2064
2SB1371
2SB1371
2SD2064
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2SB1371
Abstract: 2SD2064
Text: Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current
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2SB1371
2SD2064
2SB1371
2SD2064
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SB1371
Abstract: 2SD2064 PANASONIC 411
Text: Power Transistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S D 2 0 6 4 , ' j * c->o • Features • • • • Unit : mm ' ^3.2 5 .2 m a x . iD .a m a x . Very good linearity of DC current gain I if e
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2SB1371
2SD2064
001b304
bT32fl52
2SB1371
PANASONIC 411
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943P
Abstract: No abstract text available
Text: Power T ransistors 2SD20Ó4 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n i t I mm 5 .2 m a x . Ì /3 .2 , 1 5 .5 m a x . • Features 6 .9 m m . • V ery good lin earity of DC c u r re n t gain hFE
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2SD20Ã
2SD2064
2SB1371
bT32052
DDlbT44
943P
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SB1371 2SB1371 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2064 c->o • Features 6.9min. -f- • V ery g oo d lin e a rity o f D C c u r r e n t gain hpE • H igh tra n sitio n fre q u e n c y (f-r)
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2SB1371
2SD2064
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943P
Abstract: ic 941 2SB1371 2SD2064
Text: Power Transistors 2SD2064 2SD2064 Silicon Triple-Diffused Planar Type Package D im ensions High Power A m plifier C om plem entary Pair with 2SB1371 U n it I mm . 1 5 .5 m ax. • Features 5 .2 m a x . Ì/3 .2 6 .9 m m . * • V e ry g o o d lin e a r ity o f D C c u r r e n t g a in h FE
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2SD2064
2SB1371
D01fc
bT32652
943P
ic 941
2SB1371
2SD2064
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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2SB816
Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3
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2SA1253
2SB849
2SB775
2SA1264
2SB965
2SB1371
2SA1264
2SB1372
2SB816
2SA1265
2SB1212
2SB921
2SB873
2SA1120
2SB1085B
2sb 989
2SB941
2SC4341
2SB1416
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2SB557 TOSHIBA
Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Text: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601
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2SB596
2SA1634
2SB544
2SA496
2SB562
2SA683
2SB1035
2SA934
2SB596
2SA1069
2SB557 TOSHIBA
2SB1314
toshiba 2sb554
2SB546A
2sa483
2SB554
2SB54
2SB557
2SB857
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761b nec
Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338
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2SB927
2SB739
2SB1010
2SA1705
2SB740
2SA684
2SB1035
2SB1041
2SA133S
2SA1313
761b nec
2SB1010
2sb1041
761a
2sa684 nec
2SB737
2SB927
2SB686
761-B
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