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    XP4506 Search Results

    XP4506 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    XP4506 Panasonic Composite Transistors Original PDF
    XP4506 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XP4506EN Panasonic TRANS GP BJT NPN 20V 0.3A 6SC-88 Original PDF

    XP4506 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sd1915F

    Abstract: 2SD1915 vebo 25 XP4506
    Text: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		PDF XP4506 2SD1915F 2sd1915F 2SD1915 vebo 25 XP4506

    2sd1915F

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2sd1915F

    2SD1915F

    Abstract: XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506

    2SD1915F

    Abstract: XP04506 XP4506 2SD1915
    Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● ● 4 Features 0.2±0.1 High emitter to base voltage VEBO. High forward current transfer ratio hFE. Low ON resistor Ron. 5° ● 0.12+0.05 –0.02 1.25±0.10 2.1±0.1


    Original     		PDF XP04506 XP4506) 2SD1915F 2SD1915F XP04506 XP4506 2SD1915

    2SD1915

    Abstract: 2SD1915F XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915 2SD1915F XP04506 XP4506

    2SD1915F

    Abstract: XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915F XP04506 XP4506

    2sd1915F

    Abstract: No abstract text available
    Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 0.2±0.1 1.25±0.10


    Original     		PDF XP04506 XP4506) 2SD1915F 2sd1915F

    2sd1915F

    Abstract: XP04506 XP4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 4 M Di ain sc te on na tin nc ue e/ d 6 Unit: mm 0.12+0.05


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2sd1915F XP04506 XP4506

    2sd1915f

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output 0.2±0.05 5 6 Unit: mm 0.12+0.05 –0.02 4 5˚ • High forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) XP04506 XP4506) 2SD1915F 2sd1915f

    2SD1915F

    Abstract: 2SD1915 XP4506 XP04506
    Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage


    Original     		PDF XP04506 XP4506) 2SD1915F 2SD1915F 2SD1915 XP4506 XP04506

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202