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    XN4506 Search Results

    XN4506 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XN4506 Panasonic Silicon NPN Transistor Original PDF
    XN4506 Panasonic NPN epitaxial planer transistor Original PDF
    XN4506 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    XN4506 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		2002/95/EC) XN04506 XN4506) 2SD1915F PDF

    2SD1915F

    Abstract: 2SD1915 XN04506 XN4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half


    Original     		2002/95/EC) XN04506 XN4506) 2SD1915F 2SD1915 XN04506 XN4506 PDF

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10


    Original     		XN04506 XN4506) 2SD1915F PDF

    2SD1915F

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des


    Original     		2002/95/EC) XN04506 XN4506) 2SD1915F PDF

    2SD1915

    Abstract: vebo 25 XN4506 2sd1915F
    Text: Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 +0.1 +0.1 0 to 0.05 0.4±0.2 • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings Unit Collector to base voltage


    Original     		XN4506 2SD1915 vebo 25 XN4506 2sd1915F PDF

    2SD1915

    Abstract: 2sd1915F XN04506 XN4506
    Text: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)


    Original     		XN04506 XN4506) 2SD1915F 2SD1915 2sd1915F XN04506 XN4506 PDF

    2sd1915F

    Abstract: 2SD1915 ZXTN19020DZ XN04506 XN4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05 5 2 1 (0.65) 3


    Original     		2002/95/EC) XN04506 XN4506) 2sd1915F 2SD1915 ZXTN19020DZ XN04506 XN4506 PDF

    2SD1915

    Abstract: 2SD1915F XN04506 XN4506
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 1.50+0.25 –0.05 5 2 1 (0.65) 3


    Original     		2002/95/EC) XN04506 XN4506) 2SD1915 2SD1915F XN04506 XN4506 PDF

    2SD1915F

    Abstract: 2SD1915 ZXTN19020DZ XN04506 XN4506
    Text: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 +0.1 +0.1 0 to 0.05 0.4±0.2 • Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		XN04506 XN4506) 2SD1915F 2SD1915 ZXTN19020DZ XN04506 XN4506 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF