Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SD1363 Search Results

    2SD1363 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1363 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1363 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1363 Unknown Cross Reference Datasheet Scan PDF
    2SD1363 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1363 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1363 Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF
    2SD1363-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1363-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SD1363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1388

    Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25


    Original
    PDF 2SD1301 2SD1302 2SD1303 2SD1304 2SD1305 2SD1306 2SD1307 2SD1308 2SD1309 2SD1310 2SD1388 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371

    2SB553Y

    Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15


    Original
    PDF 2SC3153 2SC3535 2SC3156 2SC3482 2SC3486 2SD1403 2SC3685 SDT17203 2SD1456 2SB553Y IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original
    PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    50V 1A power transistor

    Abstract: 2SB993 2SD1363
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB993 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Collector Power Dissipation: PC= 40W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -4A


    Original
    PDF 2SB993 2SD1363 50V 1A power transistor 2SB993 2SD1363

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan
    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan
    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    BBC OS 0,9 4A

    Abstract: 07380 bbc os 0.9 4A
    Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.


    OCR Scan
    PDF 2SB993 2SD1363 200X200X2mmA£ 150Xl50X2mm 100X100X2mm 70x70x2mma£ 35X35XlmmA^ 25X25XlmmA^ BBC OS 0,9 4A 07380 bbc os 0.9 4A

    D 871 Toshiba

    Abstract: 2SB993 2SD1363
    Text: TOSHIBA -CDISCRETE/0PT03- 9097250 T O S H IB A 5h DE~|TCn7250 □□□7cì3h 1 <D I S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. _ POWER AMPLIFIER APPLICATIONS. 1 Û 3 M A X .


    OCR Scan
    PDF -CDISCRETE/0PT03- 2SB993 300X300X3mmA 200X200X2rmn 150XI50Xi3ramA 50X50X2ramA^ 35X35Xlmmk 85xa5XlmmA^ IIIIlll111llltlltl lttlltiltlllllllll111llllltllia11ltiltlll D 871 Toshiba 2SD1363

    2SB993

    Abstract: 2SD1363 CL25
    Text: 1Î T ^ U B Â ^ Ï D I S C R E T E / O P T O } 9097250 TOSHIBA DeJ^Q^SO bbC <D I S C R E T E / O P T O 07379 □ 0 D 7 B 7 cì t. | o r - 3 B - ;9 2SB993 S IL IC O N PNP T R IP L E D IF F U SE D TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan
    PDF 2SB993 2SD1363 300X300X2mmAÂ 200X200X2mmAÂ 150X150x2mm 100X100X2mmA^ 70x70xsmm 35X35XlmmAÂ 35X35XImmA^ 2SB993 2SD1363 CL25

    2SD1363

    Abstract: 2SB993
    Text: TOSHIBA {DISCRETE/OPTO}- 9097250 TO SH IBA D ISC R ET E /O P T O SILICON NPN TRIPLE DIFFUSED TYPE. INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1C13MAX. ^3.01013 FEATURES: . High Collector Current ! Ic=7A


    OCR Scan
    PDF 2SD1363 2SB993 Stora97250 300X300X2mmA^ 200X200X2raii] 150XI50X2mmAÂ 100X100X2mm 50X50X2ramA^ 35X35XlmmA^ 2SD1363 2SB993

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711