Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC5363 Search Results

    SF Impression Pixel

    2SC5363 Price and Stock

    Panasonic Electronic Components 2SC536300L

    RF TRANS NPN 6V 10GHZ SSMINI3-G1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC536300L Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    2SC5363 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5363 Panasonic Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) Original PDF
    2SC5363 Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    2SC5363 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC536300L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 6VCEO 30MA SS-MINI 3P Original PDF
    2SC5363J Panasonic Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others Original PDF
    2SC5363(Tentative) Panasonic Silicon NPN epitaxial planer type Original PDF
    2SC5363(Tentative) Panasonic NPN Transistor Original PDF

    2SC5363 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5363

    Abstract: SC-75
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)


    Original     		2SC5363 2SC5363 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)


    Original     		2SC5363 PDF

    2SC5363J

    Abstract: 2SC536
    Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features 0.50 (0.50) Unit Collector-base voltage (Emitter open) VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)


    Original     		2SC5363J 2SC5363J 2SC536 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)


    Original     		2SC5363J 25unting PDF

    2SC5363

    Abstract: transistor frequency 1.5GHz gain 20 dB
    Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment


    Original     		2SC5363 transistor frequency 1.5GHz gain 20 dB PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open)


    Original     		2SC5363 PDF

    2SC5363

    Abstract: SC-75
    Text: Transistors 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification M Di ain sc te on na tin nc ue e/ d Unit: mm 0.2+0.1 –0.05 • Features Emitter-base voltage Collector open Collector current Collector power dissipation


    Original     		2SC5363 2SC5363 SC-75 PDF

    2SC5363

    Abstract: No abstract text available
    Text: Transistor 2SC5363 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage


    Original     		2SC5363 2SC5363 PDF

    2SC5363

    Abstract: No abstract text available
    Text: Transistor 2SC5363 Tentative Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment


    Original     		2SC5363 PDF

    2SC5363J

    Abstract: No abstract text available
    Text: Transistors 2SC5363J Silicon NPN epitaxial planar type For low-voltage high-frequency amplification 1.00±0.05 • Features Collector-base voltage Emitter open VCBO 9 V Collector-emitter voltage (Base open) VCEO 6 V Emitter-base voltage (Collector open)


    Original     		2SC5363J 125ms 2SC5363J PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF