Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC3669 Search Results

    SF Impression Pixel

    2SC3669 Price and Stock

    Toshiba America Electronic Components 2SC3669-Y(T2OMI,FM

    TRANS NPN 80V 2A MSTM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3669-Y(T2OMI,FM Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SC3669-Y,T2PASF(M

    TRANS NPN 80V 2A MSTM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC3669-Y,T2PASF(M Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components 2SC3669-Y,T2F(J

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC3669-Y,T2F(J 404
    • 1 $1.76
    • 10 $1.76
    • 100 $0.88
    • 1000 $0.704
    • 10000 $0.704
    		Buy Now

    2SC3669 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC3669 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3669 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3669 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3669 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3669 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3669 Toshiba Silicon NPN Transistor Scan PDF
    2SC3669 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC3669 Toshiba Power Amp Apps Scan PDF
    2SC3669 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC3669-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3669O Toshiba Silicon Epitaxial NPN Transistor Scan PDF
    2SC3669(-O..-Y) Toshiba Power Amp Apps Scan PDF
    2SC3669-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3669Y Toshiba Silicon Epitaxial NPN Transistor Scan PDF
    2SC3669-Y,T2PASF(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 80V SC71 Original PDF
    2SC3669-Y(T2OMI,FM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 80V SC71 Original PDF

    2SC3669 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SC3669 O-252 QW-R209-015

    common collector applications

    Abstract: 2SC3669
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SC3669 O-252 QW-R209-015 common collector applications 2SC3669

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SC3669 2SA1429 2-7D101A 20070701-JA C3669 2SC3669 2-7D101A 2SA1429

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SC3669 O-251 QW-R213-006

    c3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3669 2SA1429 c3669 2SC3669 2-7D101A 2SA1429

    2SC3669

    Abstract: No abstract text available
    Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V(Max) *High speed switching time: tstg=1.0 S(Typ.) 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SC3669 O-251 QW-R213-006 2SC3669

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3669 2SA1429 C3669 2SC3669 2-7D101A 2SA1429

    C3669

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SC3669 2SA1429 C3669 2-7D101A 2SA1429 2SC3669

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE SAT =0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION


    Original     		PDF 2SC3669 OT-223 2SC3669G-x-AA3-R OT-89 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T O-251 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SC3669 2SA1429 2-7D101A C3669 2SC3669 2-7D101A 2SA1429

    2sc3669

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage VCE SAT =0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION


    Original     		PDF 2SC3669 OT-223 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R OT-89 2SC3669L-x-AB3-R 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T O-251 2sc3669

    C3669

    Abstract: 2-7D101A
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC3669 2SA1429 2-7D101A C3669 2-7D101A

    A1429

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SA1429 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1429 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)


    Original     		PDF 2SA1429 2SC3669 2-7D101A 20070701-JA A1429 2-7D101A 2SA1429 2SC3669

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    A1429

    Abstract: No abstract text available
    Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1429 2SC3669. 2-7D101A A1429

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)


    OCR Scan     		PDF 2SC3669 2SA1429

    2SC3669

    Abstract: 2-7D101A 2SA1429
    Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		PDF 2SC3669 2SA1429 2-7D101A 20truments, 2SC3669 2-7D101A 2SA1429

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATION. • Low Saturation Voltage : VCE(sat)=0.5V (Max.) (IC=1A) • High Speed Switching Time: tstg= 1 '0us (Typ.) • Complementary to 2SA1429


    OCR Scan     		PDF 2SC3669 2SA1429

    2sc3669

    Abstract: so805
    Text: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)


    OCR Scan     		PDF 2SC3669 2SA1429 2sc3669 so805

    2SC3669

    Abstract: 2SA1429
    Text: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1429


    OCR Scan     		PDF 2SC3669 2SA1429 961001EAA2 2SC3669 2SA1429

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • Low Saturation V oltage : V q e (sat) = 0.5V (Max.) • H igh Speed S w itch in g Tim e : t stg = 1.0/us (Typ.)


    OCR Scan     		PDF 2SC3669 2SA1429 2-7D101A 2-7D101A 2SA1429 2SC3669

    3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS 7.1 MAX • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		PDF 2SC3669 2SA1429 2-7D101A 3669 2SC3669 2-7D101A 2SA1429

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1429 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A)


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A