Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB123 Search Results

    SF Impression Pixel

    2SB123 Price and Stock

    Rochester Electronics LLC 2SB1234-TB-E

    PNP EPITAXIAL PLANAR SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1234-TB-E Bulk 177,000 2,664
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11
    		Buy Now

    Rochester Electronics LLC 2SB1234-TB-E-SY

    PNP EPITAXIAL PLANAR SILICON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1234-TB-E-SY Bulk 12,000 2,664
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11
    		Buy Now

    ROHM Semiconductor 2SB1239TV2

    TRANS PNP DARL 40V 2A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1239TV2 Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.24192
    		Buy Now
    Avnet Americas 2SB1239TV2 Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ROHM Semiconductor 2SB1238TV2P

    TRANS PNP 80V 0.7A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1238TV2P Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18606
    		Buy Now
    Avnet Americas 2SB1238TV2P Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    ROHM Semiconductor 2SB1238TV2Q

    TRANS PNP 80V 0.7A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1238TV2Q Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.20363
    		Buy Now
    Avnet Americas 2SB1238TV2Q Ammo Pack 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 2SB123 price and stock on Findchips.com

    2SB123 Datasheets (131)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB123 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB123 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB123 Unknown Cross Reference Datasheet Scan PDF
    2SB123 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB123 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB123 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB123 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB123 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB123 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1230 Sanyo Semiconductor High-current switch Original PDF
    2SB1230 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1230 Unknown Silicon PNP Transistor Scan PDF
    2SB1230 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1230 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1230 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1230 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1230 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SB1231 Sanyo Semiconductor High-current switch Original PDF
    2SB1231 Unknown Silicon PNP Transistor Scan PDF
    2SB1231 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2SB123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1230

    Abstract: 2SD1840
    Text: JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching


    Original     		PDF 2SB1230 2SD1840 -100V; 2SB1230 2SD1840

    2SB1235

    Abstract: sanyo 2033
    Text: Ordering number:EN2554A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1235/2SD1852 Driver Applications Features Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. unit:mm 2033 [2SB1235/2SD1852]


    Original     		PDF EN2554A 2SB1235/2SD1852 2SB1235/2SD1852] 2SB1235 2SB1235 sanyo 2033

    2SB1230

    Abstract: 2SD1840
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1230 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 APPLICATIONS


    Original     		PDF 2SB1230 -100V 2SD1840 -100V; 2SB1230 2SD1840

    2SD1841

    Abstract: 2SB1231
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1231 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 APPLICATIONS


    Original     		PDF 2SB1231 -100V 2SD1841 -100V; 2SD1841 2SB1231

    2SD1918

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


    Original     		PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63

    2SB1237

    Abstract: TRansistor 2SB1237 data 2SA1515S 2SD1858 SC-72
    Text: Medium Power Transistor 32V,1A 2SA1515S / 2SB1237 Dimensions (Unit : mm) 2.5 + − 0.2 6.8 + − 0.2 0.9 3Min. 3+ − 0.2 (15Min.) Structure Epitaxial planar type PNP silicon transistor 2SB1237 2+ − 0.2 0.45 +0.15 −0.05 2.5 +0.4 −0.1


    Original     		PDF 2SA1515S 2SB1237 15Min. 65Max. 2SA1515S 500mA 2SD1858 SC-72 R1010A 2SB1237 TRansistor 2SB1237 data 2SD1858 SC-72

    2SB1237

    Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
    Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +


    Original     		PDF 2SB1132 2SA1515S 2SB1237 2SB1132 2SA1515S 65Max. SC-72 SC-62 R0039A 2SB1237 2SD1664 2SD1858 SC-72 T100 2SB1132-QR

    4k resistor

    Abstract: 2SB1183 2SB1239 2SD1759 2SD1861 T146
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


    Original     		PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63 4k resistor 2SB1239 2SD1861 T146

    2Sb1238

    Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
    Text: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5


    Original     		PDF 2SB1189 2SB1238 2SD1767 2SD1859. 2SB1189 SC-62 2Sb1238 2SD1859 T100 ic T100 bd marking code transistor ROHM

    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A !External dimensions (Units : mm) !Features 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ)


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    transistor 2SB1236

    Abstract: 2SB1236 2SD1857
    Text: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 !External dimensions (Units : mm) !Features 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz)


    Original     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max. -100V 30MHz transistor 2SB1236 2SB1236 2SD1857

    transistor Ic 1A datasheet NPN

    Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
    Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1664 2SD1858 500mA 2SB1132 2SB1237. 96-207-D12) transistor Ic 1A datasheet NPN 2SD1858 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor

    2SB1183

    Abstract: 2SB1239 2SD1759 2SD1861 T146
    Text: 2SB1183 / 2SB1239 Transistors Power transistor −40V, −2A 2SB1183 / 2SB1239 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861.


    Original     		PDF 2SB1183 2SB1239 2SD1759 2SD1861. 2SB1183 SC-63 2SB1239 2SD1861 T146

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2553A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1234/2SD1851 Driver Applications Package Dimensions • AF amplifier, solenoid drivers, LED drivers. · Darlington connection. · High DC current gain. · Ultrasmall-sized package permitting sets to be made


    Original     		PDF ENN2553A 2SB1234/2SD1851 2018B 2SB1234/2SD1851] 2SB1234

    BF752

    Abstract: transistor BF 199 2SB1236
    Text: SPICE PARAMETER 2SB1236 by ROHM TR Div. * 2SB1236 PNP BJT model * Date: 2006/11/20 .MODEL 2SB1236 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797


    Original     		PDF 2SB1236 Q2SB1236 00E-15 4330E-9 67E-12 96E-12 9216E-9 01E-9 BF752 transistor BF 199 2SB1236

    2SB1233

    Abstract: 2SB1233A
    Text: Power Transistors 2 SB 1233 , 2 SB 1233 A 2SB 1233, 2SB1233A Silicon PNP Epitaxial Planar Type Package Dimensions P&wer Amplifier Unit : mm • Features • High co llector-em itter voltage 3.7max. 7.3max. V ceo 0.9 ± 0 . 1 O.Smax.- • Wide area of safety operation (ASO)


    OCR Scan     		PDF 2SB1233, 2SB1233A 2SB1233 2SB1233A

    2sb1237

    Abstract: No abstract text available
    Text: ROHM 4GE CO L T D D • TflS ûW |Q 9 M S B1RHI1 2SB909M/2SB1237 7 = 2 7 -2 J h 7 > V ^ 5 / T ransistors " 2S! DÜ QS S 0 3 1 77 ^ ^ U“ ^ PNP V U a > K 7 > V 7 ^ /M edium Power Amp. Epitaxial Planar PNP Silicon Transistors ' ÿ f-J f^ ^ H /D im e n s io n s Unit : mm


    OCR Scan     		PDF 2SB909M/2SB1237 2SD1225M/2SD1858 2SD1225M, 2SD1858. 2sb1237

    2SB12

    Abstract: 2SB1231 2SD1841 5SB12
    Text: [^O rd e ring n u m b e r: E N 3260A 2SB1231/2SD1841 2SB1231 : PNP Epitaxial P lanar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications Features • Large current capacity and wide ASO. •Low s aturation voltage.


    OCR Scan     		PDF EN3260A 2SB1231/2SD1841 2SB1231 2SD1841 00V/25A 2SB12 2SB1231 2SD1841 5SB12

    2SB1236

    Abstract: 2SD1857 transistor 120v
    Text: 2SB1236 Transistors Power Transistor -120V, - 1 ,5A 2SB1236 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = -1 20V) 2) Low collector output capacitance. (Typ. 30pF at V cb = - 1 0V) D 3) High transition frequency, (fr = 50MHz)


    OCR Scan     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 100ms -50pA -100V 2SB1236 2SD1857 transistor 120v

    Untitled

    Abstract: No abstract text available
    Text: h ~p > y X $ / I ransistors 2 S B 9 1 O M 3 8 2 2SB910M/2SB1238 v = r > 's 7 ,j? ^p'tax'a* Planar PNP Silicon Transistors i ’^ ^ J ii'llffl/M e d iu m Power Amp. • 1 Pc = 1 W 0 /D im e n s io n s U n it: mm) t * it 'o 2 )S W IE , VCeo = - 80V, lc = - 0 . 7 A


    OCR Scan     		PDF 2SB910M 2SB1238 2SB910M/2SB1238 2SD1226M, 2SD1859.

    Untitled

    Abstract: No abstract text available
    Text: 2SB1130AM/2SB1236A h 7 > y 7 i i / I ransistors 2SB 1130AM 2SB1236A PNP y ' J - ¡ > Epitaxial Planar PNP Silicon Transistors 't'ii^ jiite ffl/M e d iu m Power Amp. • \Ü £ |3 |/D im e n s io n s Unit : mm 2SB 1236A 2SB 1130A M BV c e o = — 160V 6.8± 0.2


    OCR Scan     		PDF 2SB1130AM/2SB1236A 1130AM 2SB1236A 2SD1665AM 2SD1857A 2SD1857A. SC-71

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y 7 $ /T ra n s is to rs 2SB1076M /2SB1239 2SB1076M 2SB1239 • « ft 1 ? - < J > H il5 B ^ 3 ii,lliffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistors h > i i ^ T S h FE T '< fe S „ 2) B E P n 1 i;:ftj4 k O < D jftJ 5 i£ rtiK o


    OCR Scan     		PDF 2SB1076M /2SB1239 2SB1239 2SB1076M 2SB1076M/2SB1239

    Untitled

    Abstract: No abstract text available
    Text: MGE 3 ROHM CO LTD B 7ÖSÖcm 00D553h T HRHM h 7 > y ^ ^/T ransistors 2SB1076M/2SB1239 — 2 S S 1076PÜ 2 S B 1239 — — “ — “ " " 7 ^ 2 7 -2 3 -< J> h > 1&IÜ Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistors • ÿi-JfÎThJÜI/Dimensions Unit : mm


    OCR Scan     		PDF 00D553h 2SB1076M/2SB1239 1076PÜ 2SB1076M 2SB1239 T-27-29