Hitachi DSA002754
Abstract: No abstract text available
Text: 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to emitter voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage
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2SB1103
Hitachi DSA002754
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b1104
Abstract: B1103 b-1104 Hitachi DSA002787 B1104 PNP
Text: 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage
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2SB1103
O-220AB
D-85622
b1104
B1103
b-1104
Hitachi DSA002787
B1104 PNP
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b1104
Abstract: B1103 Hitachi DSA001650 b-1104 B1104 PNP
Text: 2SB1103, 2SB1104 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1603, 2SD1604 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC)
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2SB1103,
2SB1104
2SD1603,
2SD1604
O-220AB
2SB1103
D-85622
b1104
B1103
Hitachi DSA001650
b-1104
B1104 PNP
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Hitachi DSA00164
Abstract: 2sd1603
Text: 2SD1603, 2SD1604 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 2.6 kΩ (Typ) 100 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C)
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2SD1603,
2SD1604
2SB1103
2SB1104
O-220AB
2SD1603
D-85622
Hitachi DSA00164
2sd1603
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2SB1103
Abstract: 2SD1603
Text: Inchange Semiconductor Product Specification 2SB1103 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1603 APPLICATIONS ・Designed for use in low frequency
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2SB1103
O-220C
2SD1603
-80mA
2SB1103
2SD1603
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2SB1103
Abstract: 2SD1603
Text: JMnic Product Specification 2SB1103 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Low collector saturation voltage ・Complement to type 2SD1603 APPLICATIONS ・Designed for use in low frequency
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2SB1103
O-220C
2SD1603
-80mA
2SB1103
2SD1603
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2SB1103
Abstract: 2SD1603
Text: SavantIC Semiconductor Product Specification 2SB1103 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC durrent gain ·Low collector saturation voltage ·Complement to type 2SD1603 APPLICATIONS ·Designed for use in low frequency
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2SB1103
O-220C
2SD1603
-80mA
2SB1103
2SD1603
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b1104
Abstract: B1103 B1104 PNP b-1104 2SB1103 DSA003644
Text: 2SB1103 Silicon PNP Triple Diffused ADE-208-868 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C)
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2SB1103
ADE-208-868
O-220AB
b1104
B1103
B1104 PNP
b-1104
2SB1103
DSA003644
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b1104
Abstract: B1103 b-1104 2SB1103 B1104 PNP Hitachi DSA00396
Text: 2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector Flange 3. Emitter ID 4.0 kΩ (Typ) 200 Ω (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage
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2SB1103
O-220AB
b1104
B1103
b-1104
2SB1103
B1104 PNP
Hitachi DSA00396
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b1104
Abstract: 2SB1103 B1103
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
b1104
2SB1103
B1103
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2SB1103
Abstract: 2SB1390 DSA003644
Text: 2SB1390 Silicon PNP Triple Diffused ADE-208-870 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item
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2SB1390
ADE-208-870
O-220FM
2SB1103
2SB1390
DSA003644
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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2SB1390
Abstract: DSA003790 2SB1103
Text: 2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4 kΩ Typ 200 Ω (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SB1390
O-220FM
2SB1390
DSA003790
2SB1103
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Untitled
Abstract: No abstract text available
Text: 2SD1603,2SD1604 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1603 2SD1604 Unit Collector to base voltage
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2SD1603
2SD1604
2SB1103
2SB1104
2SD1603
2SD1603,
D-85622
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Z6 DIODE
Abstract: 2SB1103 2SB1104 2SD1603 2SD1604
Text: HITACHI 2SB1103, 2SB1104 SILICON PNP TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SD1603, 2SD1604 1. Baie 2. Collector {Flange 3. Rmmer Dimensions inmm) (J E D E C T O -2 2 0 A B ) • A B S O L U T E M A X IM U M R A T IN G S (Ta=25°C)
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2SB1103,
2SB1104
2SD1603.
2SD1604
O-22DAB)
2SBI103
2SBI104
Z6 DIODE
2SB1103
2SB1104
2SD1603
2SD1604
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Untitled
Abstract: No abstract text available
Text: 2SB1103,2SB1104 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1603, 2SD1604 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SB1103 2SB1104 Unit Collector to em itter voltage
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2SB1103
2SB1104
2SD1603,
2SD1604
2SB1103
2SB1103,
D-85622
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Untitled
Abstract: No abstract text available
Text: 2SD1603, 2SD1604 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1103 and 2SB1104 Outline T0 -2 20 A B 2 -| | I' ^ [] c L¿ 2 Collector Flange 3 Emitter 2 g 2 6 kí3 (Typ) 1 00 Í2 (Typ) ò 3 Absolute Maximum Ratings (Ta = 25°C)
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2SD1603,
2SD1604
2SB1103
2SB1104
2SD1603
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2SB1099
Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Text: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103
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2SB1072L
2SB1072S
2SB1073
2SB1075
2SB1076M
2SB1077
2SB1078K
2SB1099
MP-45)
2SB1100
2SB1099
2SD1491
2SB1100
2sb111
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hitachi ha-2
Abstract: 2sd604 2SB1103 2SB1104 2SD1603 2SD1604
Text: HITACHI 2SD1603,2SD1604 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1103 AND 2SB1104 - ! LU-a 1 i i If* - 1. B«e 2. Colleclor trijngîj Í Kmiitif Dimension* in mm (J E D E C TO -22Q A B ) M A X IM U M C O L L E C T O R D IS S IP A T IO N
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2SD1603,
2SD1604
2SB1103
2SB1104
O-220
2SD1603
hitachi ha-2
2sd604
2SB1104
2SD1604
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2S897
Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
Text: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3
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2SA1647
2SB930A
2SB986
2SA1359
2SA1096
2SB1065
2SA1622
2SA1586
2SA1628
2SB1218A
2S897
2SA1178
2SA1225
2SA1371
2SA1243
2SA1628
2SA1586
2SA879
2SA1770
2SA1283
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2SB1099
Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Text: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A
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2SA1706
2SB880
2SB676
2SB601
2SB950
2SB1341
2SB886
2SB673
2SB1108
2SB1343
2SB1099
2SB615
nec 2SB1099
B676
1086a
1091
2S8834
2sb536 TOSHIBA
2SB613
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2SA818
Abstract: 2SB681 2SB849 2SC4341 2SB681 TOSHIBA 2SB601 2SB686 2SB688 2SB558 2sb669
Text: 49 - S € Type No. a « Manuf. E ft SANYO 2SB 648 B ÍL 2SA1209 2SB 648A S ÍL 2SA1209 2SB 649 ÍL 2SB 649A S ÎL 2SB 650 H ÎL 2SB 653A ÍL 2SB 654A ÎL 2S8 655A i 2SB 668 • 2SA1011 Ä TOSHIBA Is NEC ÍL HITACHI i t i FUJITSU fâ T MATSUSHITA h m MITSUBISHI
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2sa1209
2sa1142
2sa818
2sa1284
2sa1220
2sb1086
2sa1011
2sa968
2sa1220a
2SB681
2SB849
2SC4341
2SB681 TOSHIBA
2SB601
2SB686
2SB688
2SB558
2sb669
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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