2SA914
Abstract: 2SC1953
Text: Product Specification www.jmnic.com 2SA914 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC1953 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency power pre-amplifier PINNING PIN DESCRIPTION
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2SA914
O-126
2SC1953
-30mA
-100V;
-10mA
2SA914
2SC1953
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
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2SA0914
2SA914)
2SC1953
O-126B-A1
2SA0914
2SA914
2SC1953
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 2SA914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage
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2SC1953
2SA0914
2SA914)
2SA0914,
O-126B
2SA0914
2SA914
2SC1953
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2SA914
Abstract: 2SC1953
Text: Inchange Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION
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2SA914
O-126
2SC1953
-30mA
-100V;
-10mA
2SA914
2SC1953
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150
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2SA0914
2SA914)
2SC1953
O-126B-A1
2SA0914
2SA914
2SC1953
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)
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2SA0914
2SA914)
2SC1953
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2SC1953
Abstract: power transistors semiconductor product 2SA914 NPN Power Transistors
Text: SavantIC Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC1953
O-126
2SA914
-10mA
2SC1953
power transistors
semiconductor product
2SA914
NPN Power Transistors
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Untitled
Abstract: No abstract text available
Text: 2SA914R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m
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2SA914R
Freq70M
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 1.9±0.1 0.75±0.1 Symbol Rating Unit Collector to base voltage
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2SA0914
2SA914)
2SC1953
O-126B-A1
2SA0914
2SA914
2SC1953
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2
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2SA0914
2SA914)
2SC1953
O-126B-A1
2SA0914
2SA914
2SC1953
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POWER TRANSISTORS
Abstract: 2SC1953 semiconductor product 2SA914
Text: Inchange Semiconductor Product Specification 2SC1953 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SC1953
O-126
2SA914
-10mA
POWER TRANSISTORS
2SC1953
semiconductor product
2SA914
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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2SA914
Abstract: 2SC1953
Text: SavantIC Semiconductor Product Specification 2SA914 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN DESCRIPTION
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Original
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2SA914
O-126
2SC1953
-30mA
-100V;
-10mA
2SA914
2SC1953
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2SA0914
Abstract: 2SA914 2SC1953
Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol 1.9±0.1 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2
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2SA0914
2SA914)
2SC1953
O-126B-A1
2SA0914
2SA914
2SC1953
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SA914
Abstract: 2SC1953
Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC cu rre n t gain • High collector-em itter voltage V (Iife ceo ) • Low collector output capacitance (Cot)
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2SA914
2SC1953
O-126
100MHi
2SA914
2SC1953
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2SA914
Abstract: 2SC1953
Text: Power Transistors 2SA914 2SA914 Silicon PNP Epitaxial Planar Type • Package Dimensions AF Power Pre-amplifier Complementary Pair with 2SC1953 ■ Features • Good linearity of DC current gain Iife • High collector-emitter voltage (Vceo) • Low collector output capacitance (C„b)
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2SA914
2SC1953
100MHi
2SA914
2SC1953
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2SC1953
Abstract: 2SA914 h11a
Text: Power T ransistors 2SG1953 2SC1953 Silicon NPN Epitaxial Planar Type ;• Package Dimensions AF Power Pre-Amplifier Complementary Pair with 2SA914 ■Features • High cd llector-em itter voltage V ceo • Small collector output capacitance (C„b) • Optimum for 60—100W p re-d riv er in com plem entary pair w ith 2SA914
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2SG1953
2SC1953
2SA914
001b3bb
2SC1953
2SA914
h11a
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2SA914
Abstract: 2SC1953
Text: PANASONIC INDL/ELEKiSEMI} 75C D J 1^35654 □00fl77feJ □ h *_ T ‘ 5 3 " 7 2SA914 2SA914 '> iJ zj > PN P x fcf£ ^r'> 7 Jl^y Is PNP Epitaxial Planar '(g;^;SWi HU liltiffl/AF Power Pre-amplifier 2SC1953 >J/Complementary Pair with 2SC1953 • ^/Features
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0Dfl77t,
2SA914
2SC1953
2SC1953
100MHÃ
2SA914
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2sa899
Abstract: 2SC1904 2SA904A 2SA933LN 2sc2673 2SA898 2SA887 2SA881 2SA93 2sc1846
Text: - 16 - Ta=25£C, *EP(âTc=25t M 2SA847A 2SA854 2SA854S 2SA872 2SA872A 2SA874 2SA874M 2SA879 2SA881 2SA885 2SA8S6 2SA887 2SA893 2SA893A 2SA898 2SA899 2SA900 2SA904A 2SA913 2SA913A 2SA914 2SA915 2SA916 2SA921 2SA929 2SA930 2SA933 2SA933LN 2SA 933S 2SA933SU
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Ta-25t)
2SA847A
ZSA854
2SA854S
2SA872
2SA872A
2SC1980
2SA921
2SA929
2SA930
2sa899
2SC1904
2SA904A
2SA933LN
2sc2673
2SA898
2SA887
2SA881
2SA93
2sc1846
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NEC 1357
Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Text: 29 - a « a « Manuf. Type No. ;¥ Z SANYO U 2 TOSHIBA B S NEC ÌL HITACHI m ± FUJITSU ì1 tfl T MATSUSHITA a £ 2SA953 2SA1309A 2S A 1352 Z 2SA1142 2SA914 2 SA Z 2 S A 1 3 51 / 1 353 > h m. MITSUBISHI □ — ROHM A 2SA937 2SB1011 # 2SA1156 2SB1011 2SB942A
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2SA1351,
2SA1352,
2SA953
2SA1309A
2SA914
2SB1011
2SA937
2SA1142
2SA1700
2SB825
NEC 1357
2sa1175
2SB710
2SA937
2SA1091
2SA953
2sa1361
2SA1142
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2SA1015
Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624
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2SB1037
2SB649A
2SB1186A
2SA1306A
2SB1186B
2SB548
2SB1314
2SA1783
2SA1015
2SA733
2SA1091
2SA1371
2SA562TM
2SB548
2SB814
2SA1243
2SB642
2SB793
2SA1306A
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K 2411
Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Text: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type
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3SK241
T0220F
K 2411
k2411
IX 3354
a699a
3SK2411
2Sa1950
T092L
2SB0774
3SK271
c 5019
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2SB0774
Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Text: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)
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O-126
2SC2258
2SC3063
2SC5340
O-202
T0-220
O-220F
2SC2923
2SC4714
2SC3942
2SB0774
2SA2004
2SB160
2SB642
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