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    2SA189 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    2SA1897 Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SA189 Price and Stock

    Panasonic Electronic Components 2SA1890GRL

    TRANS PNP 80V 1A MINIP3-F2
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    DigiKey 2SA1890GRL Reel 1,000
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    Panasonic Electronic Components 2SA18900RL

    TRANS PNP 80V 1A MINIP3-F1
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    DigiKey 2SA18900RL Reel
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1891(TP,F) 4,800
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    2SA189 Datasheets (72)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA189 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA189 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA189 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA189 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA189 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA189 Unknown Cross Reference Datasheet Scan PDF
    2SA1890 Kexin Silicon PNP Epitaxial Planar Original PDF
    2SA1890 Panasonic PNP Transistor Original PDF
    2SA1890 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1890 Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1890 TY Semiconductor Silicon PNP Epitaxial Planar - SOT-89 Original PDF
    2SA1890 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1890 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA18900RL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO 1A MINI PWR Original PDF
    2SA1890GRL Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 80VCEO 1A MINIP-3 Original PDF
    2SA1890Q Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1890R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1890R Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1890S Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1891 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TPS; Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC5028 Original PDF

    2SA189 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1892

    Abstract: 2SC5029
    Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W


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    2SA1892 2SC5029 2SA1892 2SC5029 PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2


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    2002/95/EC) 2SA1890G 2SC5026G PDF

    2SA1896

    Abstract: ITR05002
    Text: 2SA1896 Ordering number : EN4718B SANYO Semiconductors DATA SHEET 2SA1896 PNP Epitaxial Planar Silicon Transistor DC / DC Converter, Motor Driver Applications Features • • • • Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    2SA1896 EN4718B 2SA1896 ITR05002 PDF

    2SA1890

    Abstract: 2SC5026
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)


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    2002/95/EC) 2SA1890 2SC5026 2SA1890 2SC5026 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SC5026G 2SA1890G PDF

    A1891

    Abstract: transistor A1891 2SA1891 2SC5028
    Text: 2SA1891 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1891 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 1.3 W (Ta = 25 °C)


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    2SA1891 2SC5028 A1891 transistor A1891 2SA1891 2SC5028 PDF

    2SA1890

    Abstract: 2SC5026
    Text: Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


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    2SC5026 2SA1890 2SA1890 2SC5026 PDF

    2SA1890

    Abstract: 2SC5026 2sa189
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)


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    2002/95/EC) 2SA1890 2SC5026 2SA1890 2SC5026 2sa189 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1893 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1893 Strobe Flash Applications Audio Power Amplifier Applications • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


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    2SA1893 PDF

    2SA1896

    Abstract: No abstract text available
    Text: Ordering number:4718A PNP Epitaxial Planar Silicon Transistor 2SA1896 DC/DC Converter, Motor Driver Applications Features Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Small size making it easy to provide high-density,


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    2SA1896 2SA1896] 2SA1896 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2


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    2002/95/EC) 2SA1890 2SC5026 PDF

    A1893

    Abstract: 2SA1893
    Text: 2SA1893 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1893 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm • hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) • hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max)


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    2SA1893 A1893 2SA1893 PDF

    2SA1897

    Abstract: C11531E
    Text: DATA SHEET SILICON TRANSISTOR 2SA1897 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING UNIT: mm for high current control in small dimension. This transistor is ideal


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    2SA1897 2SA1897 C11531E) C11531E PDF

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    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SA1890 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 2.50-0.1 Features +0.1 4.00-0.1 +0.1 1.80-0.1 Low collector-emitter saturation voltage VCE sat +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1


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    2SA1890 OT-89 PDF

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    Abstract: No abstract text available
    Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage


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    2SA1893 --35V, --10mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO


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    2SA1899 2SC5052. ----120V, --10mA, --100mA --500mA, --50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1893 2 S A 1 893 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS M EDIUM PO W ER AM PLIFIER APPLICATIONS Unit in mm 5.0 ±0.2 ^FE (1) —100~320 hF E ( 2 ) - 70 (Min.) Low Collector Saturation Voltage : v C E (s a t)= -1-o v (Max.)


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    2SA1893 PDF

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


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    2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825 PDF

    2SA1893

    Abstract: No abstract text available
    Text: 2SA1893 TO SH IBA 2 S A 1 893 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • hpE (1) —100~320 hFE(2) = 70 (Min.) Low Collector Saturation Voltage : VCE (Sat) ——1.0V (Max.)


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    2SA1893 2SA1893 PDF

    2SA1892

    Abstract: 2SC5029
    Text: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation


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    2SA1892 2SC5029 2SA1892 2SC5029 PDF

    2SA1899

    Abstract: 2SC5052
    Text: TO SH IBA 2SC5052 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5052 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 2.7MAX. DRIVER STAGE AMPLIFIER APPLICATIONS. • ^1 Complementary to 2SA1899 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2SC5052 2SA1899 2SA1899 2SC5052 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1891 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 8 9 1 Unit in mm POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • a.o±o.2 t m Low Collector Saturation Voltage •• V•nv^-Ci -n _ 0 S V f M a' -y ^ ( J ^ = _ 1 A)


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    2SA1891 2SA1891 300ns 2SC5028 -100m PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SA1899 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC5052. MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT Collector-Base Voltage


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    2SA1899 2SC5052. PDF

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 PDF