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    2SA1729 Price and Stock

    Rochester Electronics LLC 2SA1729S-TD-E

    BIP PNP 1.5A 40V
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    DigiKey 2SA1729S-TD-E Bulk 6,000 1,268
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    onsemi 2SA1729S-TD-E

    2SA1729 - Bipolar PNP Transistor, 1.5A 40V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SA1729S-TD-E 6,000 1
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    2SA1729 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1729 Kexin High-Speed Switching Applications Original PDF
    2SA1729 Sanyo Semiconductor High-speed switching Original PDF
    2SA1729 TY Semiconductor High-Speed Switching Applications - SOT-89 Original PDF
    2SA1729 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1729 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1729 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1729 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1729 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SA1729 Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF
    2SA1729 Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF
    2SA1729Q Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1729R Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1729S Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF

    2SA1729 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1729 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SA1729 Freq300M

    smd marking AG

    Abstract: AG marking transistor smd marking SMD BR 2sa172 2SA1729
    Text: Transistors SMD Type High-Speed Switching Applications 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter


    Original     		PDF 2SA1729 -100mA smd marking AG AG marking transistor smd marking SMD BR 2sa172 2SA1729

    2sa172

    Abstract: 2SA1729
    Text: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original     		PDF 2SA1729 EN3133A 250mm20 2sa172 2SA1729

    2SA1729

    Abstract: ITR04405 ITR04406 ITR04407 MV3100
    Text: 2SA1729 注文コード No. N 3 1 3 3 A 三洋半導体データシート 半導体ニューズ No.N3133 をさしかえてください。 2SA1729 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長


    Original     		PDF 2SA1729 N3133 250mm2 100mA 100mA 33110JB ITR04409 2SA1729 ITR04405 ITR04406 ITR04407 MV3100

    2SA1729

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1729 Features Adoption of FBET, MBIT Process. Large Current Capacity. Low Collector-to-Emitter Saturation Voltage. High-Speed Switching. Small-Sized Package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		PDF 2SA1729 -100mA 2SA1729

    2SA1729

    Abstract: ITR04405 ITR04406 ITR04407 marking ag
    Text: Ordering number:ENN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


    Original     		PDF ENN3133 2SA1729 2SA1729] 25max 2SA1729 ITR04405 ITR04406 ITR04407 marking ag

    2SA1729

    Abstract: No abstract text available
    Text: Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


    Original     		PDF EN3133 2SA1729 2SA1729] 2SA1729

    2097B

    Abstract: 2SA1729 2SC4520 FP207
    Text: 注文コード No. N 6 4 5 7 FP207 N6457 60100 新 FP207 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ プッシュプル回路用 ・PNP トランジスタ , NPN トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が


    Original     		PDF FP207 N6457 FP207 2SA1729 2SC4520 250mm2 100mA 2097B 2SA1729 2SC4520

    fp104

    Abstract: No abstract text available
    Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original     		PDF EN4655 FP104 FP104 2SA1729 SB05-05CP FP104]

    FP104

    Abstract: 2SA1729 ITR10790 ITR10791 SB05 N4655
    Text: 注文コード No. N 4 6 5 5 FP104 No. N4655 82200 FP104 特長 TR : PNP エピタキシァルプレーナ形シリコントランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・PNP トランジスタとショットキバリアダイオードを 1 パッケージに 2 素子内蔵した複合タイプであり


    Original     		PDF FP104 N4655 FP104 2SA1729 SB05-05CP 250mm2 25max ITR10801 ITR10800 2SA1729 ITR10790 ITR10791 SB05 N4655

    marking EB 202 diode

    Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
    Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original     		PDF EN4655 FP104 FP104 2SA1729 SB05-05CP FP104] marking EB 202 diode marking EB 202 transistor EN4655

    transistor 2038

    Abstract: 2SA1729 S60S6
    Text: SANYO SEMICONDUCTOR CORP 22E D 7 T ci7Q7b Q0G70ñS b T-37-/5 2SA1729 % PNP Epitaxial Planar Silicon Transistor 20 3 8 High-Speed Switching Applications 3133 F eatures •Adoption of FBET, MBIT processes ■Large current capacity • Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SA1729 -T-37-/Ã 250mm2 transistor 2038 2SA1729 S60S6

    Untitled

    Abstract: No abstract text available
    Text: O rdering num ber: EN 3133 J 2SA1729 N o .3133 J SA \YO P N P E pitaxial P la n a r Silicon T ra n sisto r High-Speed Switching Applications F e a tu r e s • Adoption of FBET, MBIT processes •L arge c u rre n t capacity • Low collector-to-em itter sa tu ra tio n voltage


    OCR Scan     		PDF 2SA1729 6089MO

    2SA1148

    Abstract: SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130
    Text: - 48 - Ta=25°C, *EP(iTc=25<0 WL 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 2SA1730 2SA1731 2SA1732 2SA1733K 2SA1734 2SA1735 2SA1736 2SA1737 2SA1738 2SA1739 2SA1740 2SA1741 2SA1742 2SA1743 2SA1744 2SA1745 2SA1747 2SA1748 2SA1749 2SA1755 2SA1757 2SA1758 2SA 17 5 9


    OCR Scan     		PDF 2SA1725 2SA1726 2SA1727 2SA1728 2SA1729 SA1730 2SA1731 SC-70) 2SA1748 2SC4564 2SA1148 SA1757 2SA1126 2SC456 2SA1140 2SA1747 2SA1755 2SA1138 2SA1763 2SA1130

    2SA1729

    Abstract: No abstract text available
    Text: Ordering n u m b e r:EN 3133 _ No.3133 2 S A 17 2 9 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage


    OCR Scan     		PDF 2SA1729 250mm2 2SA1729

    2sa1015

    Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
    Text: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK


    OCR Scan     		PDF 2SA778AK 2SA1309A 2SA562 2SA673 2SA933 2SA984 2SA1015 2sa1015 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: E N 4655 _ No.4655 FP104 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications I F e a tu re s - Composite type with 2 devices PNP transistor and Schottky barrier diode contained in one package,


    OCR Scan     		PDF FP104 FP104 2SA1729 SB05-05CP

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124

    B948A

    Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
    Text: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M


    OCR Scan     		PDF RN20Q2 DTA114ES 2SA1669 2SA1245 2SA1768 2SB1473 2SA1284 2SB1130M 2SA1703 2SB793 B948A 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 nec 1441

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    mosfet k 2038

    Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
    Text: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB


    OCR Scan     		PDF 2SK2170 2SK1068 2SK1069 2SK1332 2SK2219 2SK303 2SK545 2SK771 mosfet k 2038 TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155

    2SC5187

    Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
    Text: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller


    OCR Scan     		PDF 250mm 2SA1883 2SC4987 2SA1763 SC4452 2SC4443 2SA1764 2SC4453 2SC4168 2SA1728 2SC5187 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    2SC5188

    Abstract: 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168
    Text: SAf/YO H IG H - S P E E D S W IT C H IN G A P P L IC A T IO N S {Saal! Signal Transistors SANYO:SMCF F e a t u r e s Case Outlines unit:mm) SANYO: MCP * H i g h switching speed * H i g h breakdown voltage 1 ♦ Low collector saturation voltage ♦ Very small-sized package permitting a set to be made smaller -


    OCR Scan     		PDF 250mm 2SA1883CHA) 2SC4987 2SC4522 2SA1732 2SC4523 SC-43 MT990202TR 2SC5188 2SA1935 2sc5187 2sa193 2SA1936 2SC4453 2SA1607 2SA1728 2SA1764 2SC4168