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    2SC4520

    Abstract: ITR07159 ITR07160 2SC452
    Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SC4520 EN3139A 2SC4520 ITR07159 ITR07160 2SC452

    Untitled

    Abstract: No abstract text available
    Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SC4520 EN3139A 250mm2â

    7007B-004

    Abstract: ITR04416 ITR04418 2SA1730 ITR04415
    Text: 2SA1730 注文コード No. N 3 1 3 4 A 三洋半導体データシート 半導体ニューズ No.N3134 をさしかえてください。 2SA1730 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長


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    PDF 2SA1730 N3134 250mm2 500mA 500mA 33110JB ITR04421 7007B-004 ITR04416 ITR04418 2SA1730 ITR04415

    2sa172

    Abstract: 2SA1729
    Text: 2SA1729 Ordering number : EN3133A SANYO Semiconductors DATA SHEET 2SA1729 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SA1729 EN3133A 250mm20 2sa172 2SA1729

    2SC4521

    Abstract: ITR07169 ITR07170
    Text: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SC4521 EN3140B 2SC4521 ITR07169 ITR07170

    2SA1730

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


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    PDF 2SA1730 EN3134A 2SA1730

    2SA1729

    Abstract: ITR04405 ITR04406 ITR04407 MV3100
    Text: 2SA1729 注文コード No. N 3 1 3 3 A 三洋半導体データシート 半導体ニューズ No.N3133 をさしかえてください。 2SA1729 PNP エピタキシャルプレーナ型シリコントランジスタ 高速度スイッチング用 特長


    Original
    PDF 2SA1729 N3133 250mm2 100mA 100mA 33110JB ITR04409 2SA1729 ITR04405 ITR04406 ITR04407 MV3100

    Untitled

    Abstract: No abstract text available
    Text: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original
    PDF 2SC4521 EN3140B

    Untitled

    Abstract: No abstract text available
    Text: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.


    Original
    PDF 2SA1730 EN3134A