A1452A
Abstract: 2SA1452A 2SC3710A
Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)
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c3710a
Abstract: 2SC3710A C371 2SA1452A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
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Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
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A1452A
Abstract: 2sa1452a A1452 2SC3710A
Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)
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2SA1452
Abstract: 2SC3710
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS
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2SC371
Abstract: high hfe transistor 2SA1452 2SC3710
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3710 APPLICATIONS
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Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
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2SC3710A
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2SC371
Abstract: 2SA1452 2SC3710
Text: Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Complement to type 2SA1452 ﹒Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage
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2SA1452
Abstract: 2SC3710 2SC371
Text: JMnic Product Specification 2SA1452 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3710 APPLICATIONS ・High current switching applications PINNING
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A1452
Abstract: A1452A 2SA1452A 2SC3710A A-1452
Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)
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2SC3710
Abstract: NPN 80V 3A 2SA1452
Text: SavantIC Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SA1452
Abstract: 2sa145 2SC3710
Text: SavantIC Semiconductor Product Specification 2SA1452 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SC3710 APPLICATIONS ·High current switching applications
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2SC3710
Abstract: 2SC371 2SA1452 2SC371-0
Text: Inchange Semiconductor Product Specification 2SC3710 Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SA1452 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications
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c3710a
Abstract: 2SA1452A 2SC3710A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
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Abstract: No abstract text available
Text: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)
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Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC3710 HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: . Low Collector Saturation Voltage : VcE sat ~°-4V(Max.) 0 3.2 ±0.2 (at Ic=6A) . High Speed Switching Time : tstg= l.Ous(Typ.) Zli . Complementary to 2SA1452
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2SC3710
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2SA1452A
Abstract: 2SC3710A
Text: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )
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2sa1452
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. • • • 2SA1452 Low Collector Saturation Voltage : v CE(sat)= —0.4V(Max.) (at Ic = -6A ) High Speed Switching Time : tgtg= 1.0,us (Typ.)
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2SA1452A
Abstract: 2SC3710A
Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A
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2SA1452A
Abstract: 2SC3710A
Text: 2SA1452A TO SH IBA 2SA1452A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5 < tY' o o 2.7±Q 2 of ml +1 in 1.1 1.1 0.75 ±0.15 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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Untitled
Abstract: No abstract text available
Text: 2SA1452 SILICON PNP EPITAXIAL TYPE HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm FEATURES: 0.3 MAX. 0 3 .2 ±0.2 . Low Collector Saturation Voltage : v CE sat =-0.4V(Max.) (at Ic=-6A) . High Speed Switching Time : tstg=1.0(is(Typ.)
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2SC3710A
Abstract: 2SA1452A
Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A
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2SA1452A
Abstract: 2SC3710A s2555
Text: 2SA1452A TO SH IBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage . , .x — n a \ t 10 ±0.3 t^ , — • vuiii (sat)- '“'•rrv v"iaA^ van •
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IR-1U
Abstract: No abstract text available
Text: TOSHIBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Low Collector Saturation Voltage • V qe (sat)“ —0.4V (Max.) (at Ic = - 6A) High Speed Switching Time : tgtg^l.O^siTyp.)
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2SA1452A
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