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Toshiba America Electronic Components 2SA1431-Y 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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2SA1431 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1431	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor	Original	PDF
2SA1431	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1431	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1431	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1431	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1431	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1431	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1431	Toshiba	Silicon PNP transistor for strobe flash applications and medium power amplifier applications	Scan	PDF
2SA1431	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SA1431-O	Toshiba	2SA1431 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1431-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1431O	Toshiba	Silicon PNP Transistor	Scan	PDF
2SA1431-Y	Toshiba	2SA1431 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1431-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2SA1431Y	Toshiba	Silicon PNP Transistor	Scan	PDF

2SA1431 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor A1431 Abstract: a1431 a1431 transistor 2-7D101A 2SA1431 A-1431 Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	2SA1431 Transistor A1431 a1431 a1431 transistor 2-7D101A 2SA1431 A-1431	PDF
A1431 Abstract: 2SA1431 2-7D101A Text: 2SA1431 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1431 ○ ストロボフラッシュ用 ○ 中電力増幅用単位: mm • hFE = 100~320 (VCE = −2 V, IC = −0.5 A) • hFE = 70 (最小) (VCE = −2 V, IC = −4 A)	Original	2SA1431 2-7D101A 20070701-JA A1431 2SA1431 2-7D101A	PDF
Transistor A1431 Abstract: a1431 transistor Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	2SA1431 Transistor A1431 a1431 transistor	PDF
Transistor A1431 Abstract: a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	2SA1431 Transistor A1431 a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A	PDF
STK411-230E Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for	Original	STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
NES 1004 Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106 Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-30 CCD IMAGE SENSOR SOCS092 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame	Original	TC285SPD-30 SOCS092 30Frame/s NES 1004 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106	PDF
AC188 Abstract: 2SA1309 2N2907A-PL 2SA1273 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Tp aH 3M C T O pb l PNP copTMpoBKa no HanpflweHMro Kofl: BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 BC558B BC559C BC858B BC858C BF324 2SA1357 2SA1431 2N2905A 2N2907A	OCR Scan	BFT92 2SB733 AC188 BC369 2SA1273 2SA1309 2SA608 2SA966 2SB774 BC328-25 2N2907A-PL 2SA1797Q 2SA1538S 2SA1443-NEC DTA143ES mj15004-mot BCX52GEGSMD	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 a v « m • ■ 3 m tr 1 m Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hpE Linearity : hFE(i) = 100-320(VCE=-2V, IC=-0.5A )	OCR Scan	2SA1431 961001EAA2'	PDF
Untitled Abstract: No abstract text available Text: 2SA1431 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STO RO BE FLASH APPLICATIO N S. M EDIUM POW ER AM PLIFIER A PPLICA TIO N S. • • High DC Current Gain and Excellent hpg Linearity : hFE(l) = 1°0~320(V cE = - 2V> I c = - 0 .5 A ) : hFE( 2 ) = 70(Min.) ( V c e = - 2 V , I c = - 4 A )	OCR Scan	2SA1431 ----10mA,	PDF

2SA143 Abstract: 2SA1431 2-7D101A Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hEE Linearity : hFE(l) = 100-320 (VCe = -2 V , IC= -0.5A )	OCR Scan	2SA1431 2SA143 2SA1431 2-7D101A	PDF
2-7D101A Abstract: 2SA1431 Text: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)	OCR Scan	2SA1431 961001EAA2' 2-7D101A 2SA1431	PDF
Untitled Abstract: No abstract text available Text: 2SA1431 TOSHIBA 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hpjr; Linearity • : hjrE(2)-70 (Min.) (Vc e = -2 V , Ic = -4 A )	OCR Scan	2SA1431 961001EAA2'	PDF
2-7D101A Abstract: 2SA1431 Text: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hjrjr; Linearity : h p E ( l ) = 100-320 ( V c e = - 2 V , I c = -0 .5 A )	OCR Scan	2SA1431 961001EAA2' 2-7D101A 2SA1431	PDF
2-7D101A Abstract: 2SA1431 transistor Toshiba Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hpE Linearity : hpE (l) = 100~32u (VCE = -2 V , le = -0.5A )	OCR Scan	2SA1431 2-7D101A 2SA1431 transistor Toshiba	PDF
2SB536A Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431 Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 • 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI ± a FUJITSU fâ	OCR Scan	2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431	PDF
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr	PDF
15J102 Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811	OCR Scan	2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346	PDF
2sC5200, 2SA1943, 2sc5198 Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102 Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428	OCR Scan	2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102	PDF
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF

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2SA1431 Search Results

2SA1431 Price and Stock

Toshiba America Electronic Components 2SA1431-Y

2SA1431 Datasheets (15)

2SA1431 Datasheets Context Search

Transistor A1431

A1431

Transistor A1431

Transistor A1431

STK411-230E

GT30F131

IGBT GT30F124

2sC5200, 2SA1943

smd transistor h2a

GT30F124

NES 1004

AC188

Untitled

Untitled

2SA143

2-7D101A

Untitled

2-7D101A

2-7D101A

2SB536A

70H40

15J102

2sC5200, 2SA1943, 2sc5198

2SC144