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    2SA1266 TRANSISTOR Search Results

    2SA1266 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1266 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1266

    Abstract: TRANSISTOR 2SA1266 2sa1266 transistor
    Text: ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SA1266 150mA 100mA, 2SA1266 TRANSISTOR 2SA1266 2sa1266 transistor PDF

    2SA1266

    Abstract: TRANSISTOR 2SA1266
    Text: ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SA1266 150mA 100mA, 2SA1266 TRANSISTOR 2SA1266 PDF

    2SA1266

    Abstract: No abstract text available
    Text: ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SA1266 150mA 100mA, 2SA1266 PDF

    2SA1266

    Abstract: st2sa1266
    Text: ST 2SA1266 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SA1266 150mA 100mA, 2SA1266 st2sa1266 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1266 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.25 @I(C) (A) (Test Condition)100m


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    2SA1266 Freq80M PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


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    PDF

    2SA1266

    Abstract: TRANSISTOR 2SA1266 2SC3198 transistor 2SC3198 2sa1266 transistor 2SC3198 Y
    Text: 2SA1266 2SA1266 SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS (^A PP LIC A TIO N S^ • L^ow F r e q u e n c y A m p lifie r ■ L o w N o i s e A m p lif ie r C FEATURES • E x c e l l e n t h FE L i n e a r i t y , h rf: ( 0 . 1 m A ) / h rE (2mA) = 0 . 9 5 (Typ.]


    OCR Scan
    2SA1266 2SA1266Â 2SC3198/2SC3198Â 150mA -100mA, 100mA, 30MHz TRANSISTOR 2SA1266 2SC3198 transistor 2SC3198 2sa1266 transistor 2SC3198 Y PDF

    2SA10150

    Abstract: 2sa706 2SA1267GR
    Text: TO-92 Plastic Pacings Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 2SA1015 ^CBO V CEO ^EBO (V) Mm (V) Min (V) Min 50 50 5 Po (W) (A) 0Tc=25"c 0.4 0.15 t so (pA) Max 0.1 ^C8 ^CES (V) (MA) Max


    OCR Scan
    O-92-1 2SA1015 2SA1015GR 2SA673B 2SA673C 2SAG73D 2SA10150 2sa706 2SA1267GR PDF

    2SA1266

    Abstract: 2SA1267 2SA1267Y 2SA5620 2SA1266GR 2SA10150 2sa708y 2SA1266Y 2sa708 2SA1015
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) 'c PD ^CQO VCEO ^EBO (W) (V) (A) (V) (V) Min Min Min @Tc=25“c teo ^CB 'ces ^CE ^FE e (MA) e (V) (MA) e (V) Max Max Min Max lc &


    OCR Scan
    2SA1015 O-92-1 2SA1015GR 2SA10150 2SA673 2SA673A 2SA1266 2SA1267 2SA1267Y 2SA5620 2SA1266GR 2sa708y 2SA1266Y 2sa708 PDF

    2SA1267GR

    Abstract: 2SA1267
    Text: TO-92 Plastic Package Transistors PNP M a x im u m R a tin g s Type No. 2SA1015 ^C B O ^CEO ^ EBO (V) Min (V) Min (V) Min 50 50 E le c tric a l C h a ra c te ris tic s (T a = 2 5 'C , U n le ss O th e rw is e S p e c ifie d ) Pd (W) 'c (A) @Tc=25"c 5 0.4


    OCR Scan
    2SA1015 2SA1266 2SA673B 2SA673A O-92-1 2SA673 2SA70B 2SA708R 2SA708Y 23fl33c 2SA1267GR 2SA1267 PDF

    2SA10150

    Abstract: 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1015 2SA1266-0 2SA5620
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2SA1015 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 50 50 5 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Pd (W) 'c (A) @Tc=25"c 0.4 0.15 CBQ ^CB ' ces ^CE (mA) Max @ (V) (MA) Max


    OCR Scan
    2SA1015 O-92-1 2SA1015GR 2SA10150 2SA1015Y320 2SA673A 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1266-0 2SA5620 PDF

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan
    2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014 PDF

    2SC3875S

    Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
    Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200


    OCR Scan
    Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557 PDF

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan
    2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202 PDF

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan
    2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 PDF