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    2N6552 NPN Search Results

    2N6552 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    2N6552 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6552

    Abstract: 2N6555 2N6551 2n6556 2N6553 2n6554 TO202
    Text: 2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6551, 2N6554 series types are complementary silicon transistors manufactured by the epitaxial planar process, designed


    Original     		2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 2N6551, O-202 TO202 PDF

    2N6555

    Abstract: U45 semiconductor cen 30 CEN-U60 CEN-U45 2N6548 power 2n6549 TO-202 transistor 2N6548 2N6551
    Text: Power Transistors TO-202 Case TYPE NO. NPN IC A PNP 2N6548 MAX 2.0 2N6549 PD (W) 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    Original     		O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U01A 2N6555 U45 semiconductor cen 30 CEN-U60 CEN-U45 2N6548 power 2n6549 TO-202 transistor 2N6548 2N6551 PDF

    CEN-U07

    Abstract: CEN-U56 2n6555 TO-202-2 transistor cen-u07 equivalent CEN-U45 2N6556 2N6549 2N6551 2N6553
    Text: Power Transistors TO-202 Case TYPE NO. NPN PNP 2N6548 IC A PD (W) MAX 2.0 2N6549 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    Original     		O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U01A CEN-U07 CEN-U56 2n6555 TO-202-2 transistor cen-u07 equivalent CEN-U45 2N6556 2N6549 2N6551 2N6553 PDF

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


    Original     		O-220var OT-186 O-220 O-220AB TIP290 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 PDF

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator PDF

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 PDF

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 PDF

    2n6554

    Abstract: 2N6556
    Text: Power Transistors o i TO-202 Case TYPE NO. NPN PNP •c PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (mA) VCE(SAT) @ 1C 00 (A) MAX fr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0


    OCR Scan     		O-202 2N6548 2N6549 2N6551 2N6552 2N6553 CEN-U05 CEN-U06 CEN-U07 CEN-U45 2n6554 2N6556 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    OCR Scan     		O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U05 PDF

    CEN-U45

    Abstract: to 202 case 2N6549 2n6551 2N6556
    Text: P ow er T ra n sisto rs TO-202 Case NPN O Z TYPE PNP ic PD A <W) MAX BVCBO BVCEO @ Ic hFE (mA) (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0


    OCR Scan     		O-202 2n6548 2N6549 2n6551 2n6554 2n6552 2n6555 2n6553 2n6556 cen-u05 CEN-U45 to 202 case 2N6549 PDF

    IC N6555

    Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
    Text: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50


    OCR Scan     		O-202 2N6548 2N6549 2N6551 N6554 2N6552 N6555 2N6553 N6556 2N6557 IC N6555 2N6549 2N6558 2n6556 2N6548 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pow er Transistors TO-202 Case TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO @ ic hFE (V) (V) (mA) MIN MIN MIN MAX VCi(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    OCR Scan     		O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 2N6557 PDF

    cen-u45

    Abstract: RJP 30 D40N 2N6558 RJP 35
    Text: Power Transistors TO-202 Case TYPE NO. NPN RJP ic PD A> <W MAX BVCBO BVCEO @ Ic hFE (V) (V) MIN MIN MM MAX (mA) VCE(SAT) IC (A) (V) MAX tr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2,0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    OCR Scan     		O-202 2N6548 2N6549 2N6551 2N6552 2N6553 2N6557 2N6558 2N6559 2N6591 cen-u45 RJP 30 D40N RJP 35 PDF

    N6555

    Abstract: 2N6593 2n6557 2N6558 IC N6555 2N6552 to 202 case 2N6548 2N6549 2N6551
    Text: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50


    OCR Scan     		O-202 2N6548 2N6549 2N6551 N6554 2N6552 N6555 2N6553 N6556 2N6557 2N6593 2n6557 2N6558 IC N6555 to 202 case 2N6548 2N6549 PDF

    motorola mpsu05

    Abstract: MPSU06 mpsu05 MPSU07 MPS-U05 MPS-U06 MPSU-05
    Text: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 DË"|fc.3b7aSS 0030020 34 c D IO D ES/O PTO 38028 T-33-01 S IL IC O N S M A L L -S IG N A L T R A N S IS T O R D IC E (continued) MPSUC05 die no. LINE SOURCE — DEL504 D NPN This die provides performance similar to that of the following device types:


    OCR Scan     		T-33-01 DEL504 MPSUC05 2N6552 2N6553 MPSA05 MPSA06 MPSU05 MPSU06 MPSU07 motorola mpsu05 MPSU07 MPS-U05 MPS-U06 MPSU-05 PDF

    2N6591

    Abstract: No abstract text available
    Text: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120


    OCR Scan     		bSG1130 G0377 NSE181 PN3568 TN2017 TN2102 2N5321 D40D10 D40D11 D40D13 2N6591 PDF

    2A 5A10

    Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
    Text: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25


    OCR Scan     		bSG113Q GQ377aS NSE181 PN3568 TN2017 O-202 O-237 TN2102 2N5321 2A 5A10 NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 D40D10 D40D11 D40D13 PDF