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    2N6312 Search Results

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    2N6312 Price and Stock

    Central Semiconductor Corp 2N6312 TIN/LEAD

    Transistor GP BJT PNP 40V 5A 2-Pin TO-66 Sleeve (Alt: 2N6312 TIN/LEAD)
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    Avnet Americas 2N6312 TIN/LEAD 60
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    Mouser Electronics 2N6312 TIN/LEAD
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    Central Semiconductor Corp 2N6312 PBFREE

    Transistor GP BJT PNP 40V 5A 2-Pin TO-66 Sleeve (Alt: 2N6312 PBFREE)
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    Avnet Americas 2N6312 PBFREE 90
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    Signetics 2N6312

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    Quest Components 2N6312 64
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    Motorola Semiconductor Products 2N6312

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    Quest Components 2N6312 1
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    2N6312 1
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    Semicoa Semiconductors 2N6312

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    Quest Components 2N6312 47
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    2N6312 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6312 Central Semiconductor Power Transistors Original PDF
    2N6312 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Original PDF
    2N6312 Boca Semiconductor COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
    2N6312 Diode Transistor Transistor Short Form Data Scan PDF
    2N6312 Diode Transistor Transistors Scan PDF
    2N6312 General Transistor Power Transistor Selection Guide Scan PDF
    2N6312 Mospec Complementary silicon medium-power transistor - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=4 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=50 Scan PDF
    2N6312 Mospec Complementary Silicon Medium-Power Transistor Scan PDF
    2N6312 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6312 Motorola The European Selection Data Book 1976 Scan PDF
    2N6312 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6312 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6312 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6312 Unknown Transistor Replacements Scan PDF
    2N6312 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6312 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6312 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6312 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6312 New England Semiconductor PNP TO-66 / NPN TO-8 Transistor Scan PDF
    2N6312 New England Semiconductor NPN TO-66 Transistor Scan PDF

    2N6312 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process,


    Original
    PDF 2N4231A 2N4232A 2N4233A 2N6312 2N6313 2N6314 2N4231A,

    2N6312

    Abstract: 2N6313 2N6314
    Text: SavantIC Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6312 2N6313 2N6314 2N6312 2N6313 2N6314

    2N6314

    Abstract: 2N6312 2N6313
    Text: Inchange Semiconductor Product Specification 2N6312 2N6313 2N6314 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    PDF 2N6312 2N6313 2N6314 2N6312 2N6313 2N6314

    2N6312

    Abstract: No abstract text available
    Text: 2N6312 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original
    PDF 2N6312 O213AA) 1-Aug-02 2N6312

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    MJE13005A

    Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
    Text: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175


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    PDF MJ13330 O-204AA/TO-3: MJ13101 MJ13331 MJ13333 MJE13005A MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252

    IDA1012

    Abstract: 2SA10120 IDA1307 2SA12440 bd94 SOLITRON
    Text: POWER SILICON PNP Item Number Part Number I C 5 - 10 >= 5 A, SDT3716 SDT3752 SDT3752 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 SDT3703 ~~H~~~ 15 20 SDT3712 SDT3715 SDT3715 SDT3715 SDT3775 SDT3775 SDT3775 SDT3305 ~gH~g~ 25 30 SDT3325 SDT3325 SDT3325 MJE2010


    Original
    PDF SDT3716 SDT3752 2N5974 MJ2267 2N4901 SDT3703 SDT3703 IDA1012 2SA10120 IDA1307 2SA12440 bd94 SOLITRON

    BD947

    Abstract: to-53 a/TO111
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .


    Original
    PDF SDT3762 SDT3752 SDT1641 SDT3305 BD947 to-53 a/TO111

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


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    PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    2N4231

    Abstract: 2N4233A IR425 2N4231A 2N4232A 2N6212 2N6312 2N6313 2N6314
    Text: Æà MOS PEC COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS NPN 2N4231A 2N4232A 2N4233A .designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE!sat = 0 .7 V M a x .)@ lc = 1.5A ‘ Excellent DC Current Gain


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    PDF 2N4231A 2N4233A 12N6312 2N6314 2N6312 2N4232A 2N6313 2N6314 2N4231 IR425 2N6212

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan
    PDF 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan
    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    5N520

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25


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    PDF 2N6317 2N6318 2N6372 2N6373 2N6374 2N5955 2N5954 5N520

    Untitled

    Abstract: No abstract text available
    Text: NEIII E N GL A N D SEMICONDUCTOR 5<ìE bSbHTTB D = 1-5À V ceocsus = 4 0 -4 2 5 V fT = 3-10 MHz □□□□□SD PIMP TO-66 lc M AX) / " NPN Comple­ ment Type No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954 2N5955 2N5956 2N6049


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    PDF 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N5345 2N5954

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    SILICON TRANSISTOR CORP

    Abstract: 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63 2N6193 2N6211 2N6213
    Text: tr r- IV □ D □ îC\ o o o o o IO r r CO CO CD CO o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O


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    PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 SILICON TRANSISTOR CORP 2NXXXX TO53 package 2nxxx transistor 2N6274 2N6353 TRANSISTOR TO63

    MJ480

    Abstract: motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481
    Text: MOTOROLA SC BM {DIO DES/OPTO } 6367255 MOTOROLA SC DE|t,3b72SS □OaTTSl DIODES/OPTO 3 ^ 3 7 SILICON POW ER TR A N SISTO R DICE (continued) 2C6316 DIE NO. — NPN LINE SOURCE — PL500.418 NPN 3 ^ D O / 2C6318 / / PNP g51 DIE NO. — PNP LINE SOURCE — PL500.419


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    PDF 3b72SS PL500 2C6316 2C6318 2N3054 2N3713 2N3714 2N2715 2N3716 MJ480 motorola MJ480 2n4913 motorola 2N4232 MJ2802 2n4233 2n5878 2n4912 2N5872 MJ481

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


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    PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


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    PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    BU222

    Abstract: MJ425 2N3738 BU208 BU222A MJ3029 2N3583 2N3584 2N3739 2N6211
    Text: Silicon Power-Metal-Can NPN l C = 1.0 A. 2N 3583 2N 3738 2N 3739 l e = 2.0 A. 2N 3584 M J3026 MJ3027 2N 3585 2N 4240 v CEO V olts hp£ @ M in./M ax. •c Am p. v CE sat @ 'C V o lts Max. Am p. fT M Hz PD Watts Case PNP 2N 6420 2N 6 4 2 4 2N 6425 175 225 300


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    PDF 2N3583 2N6420 2N3738 2N6424 2N3739 2N6425 2N3584 2N6421 2N6211 MJ3026 BU222 MJ425 BU208 BU222A MJ3029