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    2N6255 Search Results

    2N6255 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6255 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    2N6255 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    2N6255 Motorola The European Selection Data Book 1976 Scan PDF
    2N6255 Motorola European Master Selection Guide 1986 Scan PDF
    2N6255 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6255 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6255 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6255 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6255 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6255 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6255 Unknown Transistor Replacements Scan PDF
    2N6255 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N6255 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF

    2N6255 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB


    Original     		PDF 2N6255 To-39 56-570-65/3B

    2N6255

    Abstract: 4 watt VHF
    Text: 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and


    Original     		PDF 2N6255 To-39 56-570-65/3B 2N6255 4 watt VHF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB


    Original     		PDF 2N6255 To-39 56-570-65/3B 2N6255

    2N6255

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB


    Original     		PDF 2N6255 To-39 2N6255 56-570-65/3B

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB


    Original     		PDF 2N6255 To-39 2N6255 56-570-65/3B

    2N6255

    Abstract: MSC-1306
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB


    Original     		PDF 2N6255 To-39 56-570-65/3B MSC1306 2N6255 MSC-1306

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


    Original     		PDF MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581

    2N4427

    Abstract: 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427
    Text: 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 1. Emitter 2. Base 3. Collector 500 MHz Current-Gain Bandwidth Product @ 50mA TO-39


    Original     		PDF 2N4427 To-39 MRF4427, 2N4427 1300 NPN MRF553 MRF555 MRF559 MRF607 2N3866A 2N5179 2N6255 MRF4427

    2n4427 MOTOROLA

    Abstract: motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz


    Original     		PDF 2N4427 To-39 BFR91 BFR90 MRF545 MRF544 MSC1301 2n4427 MOTOROLA motorola 2N4427 2N4427 BFR90 amplifier 2N4427 equivalent bfr91 npn UHF transistor 2N5179 npn UHF transistor BFR96 LOW POWER TRANSISTOR MRF581A mrf5943c motorola

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


    Original     		PDF MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


    Original     		PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


    Original     		PDF MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 BFR91
    Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units


    Original     		PDF MRF5943, 300MHz TempeMRF545 MRF544 s-parameter 2N4427 S-parameter 2N5179 BFR91

    MRF559

    Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB


    Original     		PDF MRF559 2N5109 2N4427 MRF4427, MSC1317 MRF559 mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB


    Original     		PDF MRF555 MRF545 MRF544 MSC1316

    MRF559

    Abstract: No abstract text available
    Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package


    Original     		PDF MRF559 MRF559G MRF559

    1N4148

    Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
    Text: MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability


    Original     		PDF MRF553 MRF4427, 2N4427 MRF553T MRF607 2N6255 2N5179 1N4148 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607

    MRF951

    Abstract: 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607
    Text: MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Fully Implanted Base and Emitter Structure. • High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz • Low Noise Figure – 1.3dB @ 1GHz • Ftau - 8.0 GHz @ 6v, 30mA • Cost Effective Macro X Package


    Original     		PDF MRF951 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 MRF951 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF5943C MRF607

    2N4427 equivalent bfr91

    Abstract: BFR91 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFR91 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR91G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA


    Original     		PDF BFR91 BFR91G 2N4427 equivalent bfr91 BFR91 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF607

    2N3866A

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N3866 Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427
    Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product


    Original     		PDF 2N3866 2N3866A To-39 28Vdc MRF555 2N4427 MRF4427, 2N3866A RF NPN POWER TRANSISTOR 1000 WATT Transistor 2N3866 for transistor bfr96 RF 2N3866 2N4427 2N5179 2N6255 MRF4427

    MRF557G

    Abstract: mrf557 2N5179 2N4427 2N5109 2N6255 MRF4427 MRF553 MRF607 mrf581a
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics


    Original     		PDF MRF557 MRF557G MRF557G mrf557 2N5179 2N4427 2N5109 2N6255 MRF4427 MRF553 MRF607 mrf581a

    transistor bfr96

    Abstract: transistor BFR91 msc1302 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


    Original     		PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MSC1302 transistor bfr96 transistor BFR91 2n2857 UHF transistor common base amplifier 2N4427 equivalent bfr91 2N5179 low cost BFR90 transistor RF POWER TRANSISTOR NPN vhf RF NPN POWER TRANSISTOR C 10-12 GHZ npn UHF transistor 2N5179

    2N3553 motorola

    Abstract: MRF229 MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340
    Text: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.


    OCR Scan     		PDF MRF229 MRF604 2N4427 MRF553 317D-01 MRF607 2N6255 2N3553 MRF237* MRF207 2N3553 motorola MRF581 mrf237 MOTOROLA MOTOROLA SELECTION 2n3553 MRF314A 2N3866 MOTOROLA motorola mrf237 MRF227 MRF340