2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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Original
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2N5551-
MMBT5551
MMBT5551
2N5551
OT-23
2N5551
2N5551B
tr 5551
2N5551 SOT23
BR 5551
2N5551 circuit
2N5551BU
BR N 5551
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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Original
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2N5551
MMBT5551
2N5551
OT-23
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PDF
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TRANSISTOR 2N5550
Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES
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Original
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M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM279
SCA76
R75/04/pp7
TRANSISTOR 2N5550
2n5551
2N5551 DATA
C2N5550
2N5401
2N5550
SC-43A
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2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551 fairchild
2N5551 SOT23
2N5551 circuit
2N5551 SOT-23
MMBT5551
MMBT5551 3s
sot23 marking 3S
marking 3s
SM 3197
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PDF
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2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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Original
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2N5551-
MMBT5551
2N5551
OT-23
MMBT5551
2N5551 SOT23
2N5551 circuit
2N5551
2N5551 fairchild
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PDF
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diodes inc 2N5551
Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING
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Original
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M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM279
SCA63
115002/00/03/pp8
diodes inc 2N5551
2N555
2N5551
hz 9102
2N5401
2N5550
BP317
C2N5550
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PDF
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
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PDF
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2N5551
Abstract: 2N5550 2N5551 circuit TRANSISTORE 10D3 2N5400 2N5401
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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Original
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2N5550
2N5551
UL94V-0
2N5550
2N5400
2N5551
2N5551 circuit
TRANSISTORE
10D3
2N5401
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PDF
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transistor equivalent 2n5551
Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage
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Original
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2N5550
2N5551*
2N5551
226AA)
Resistanc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor equivalent 2n5551
2N5551 equivalent
transistor 2n5551 equivalent
2n2222 2n5401 2n5551
2N5551 148
BC237
2n3819 equivalent ic
2N5551 motorola
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PDF
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551 SOT23
MMBT5551
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
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PDF
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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Original
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
transistor 2n5551
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PDF
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2n5551
Abstract: 2N5551 SOT23
Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
2N5551 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-12-22 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case
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Original
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2N5550
2N5551
UL94V-0
2N5550
2N5400
2N5401
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
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Original
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2N5550
2N5551
UL94V-0
2N5550
2N5400
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PDF
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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Original
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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PDF
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2N5551 transistor
Abstract: 2N5551
Text: 2N5551 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range 2. BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃
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Original
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2N5551
30MHz
2N5551 transistor
2N5551
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PDF
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2N555
Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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OCR Scan
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2N5400
2N5401
2N5550
2N5551
2N5400,
2N5401
2N5550,
O-92A
2N5400
2N555
5401
transistor 2N 5551
5551
555-1
transistor 2N5401
1000C
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PDF
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2N5550 EBC
Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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OCR Scan
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2n5400,
2n5401
2n5550,
2n5551
T0-92A
2n5400
2n555q
2n5551
600mA
2N5550 EBC
2N5401
2N5400
5551
2N5550
T092A
N5400
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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OCR Scan
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2N5400
2N5550
2N5551
O-92A
2N5400,
2N5401
2N5550,
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PDF
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2H5551
Abstract: 2Ns551
Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it Collector-Emitter Voltage VCEO 140 160 Vdc Collector-Base Voltage VCBO 160 180 Vdc Emitter-Base Voltage Rating vebo 6.0 Vdc Collector Current — Continuous fC 600 m Adc Total Device Dissipation @ TA - 25°C
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OCR Scan
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2N5550
2N5551*
2N5551
O-226AA)
2H5551
2H5551
2Ns551
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PDF
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2n5551
Abstract: 2N5550 st 2n5551
Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it C oilector-E m itter Voltage VCEO 140 160 Vdc Collector-Base Voltage v CBO 160 180 Vdc Emitter-Base Voltage R ating v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'c 600 m Adc Total Device D issipation
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OCR Scan
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2N5550
2N5551*
2N5551
O-226AA)
2N5550,
2N5551
st 2n5551
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PDF
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL BLBCTRON1CS LID . 2N5551 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package TO-92 * Collector-Emitter Voltage VCEO=160V * Collector Dissipation Pc MAX =625 mW ABSOLUTE MAXIMUM RATINGS at Tan*=25'c
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OCR Scan
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2N5551
100uA
250uA
10Hztol5
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PDF
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