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    2N5551 FAIRCHILD Search Results

    2N5551 FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ABT245/BRA Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801QRA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    74F403SPC Rochester Electronics LLC Replacement for Fairchild part number 74F403SPC. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54F38/QCA Rochester Electronics LLC Replacement for Fairchild part number 54F38/BCA. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    93425ADM/B Rochester Electronics LLC Replacement for Fairchild part number 93425ADMQB. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    54ABT245/B2A Rochester Electronics LLC Replacement for Fairchild part number 5962-9214801Q2A. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy

    2N5551 FAIRCHILD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5551B

    Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    2N5551 MMBT5551 2N5551 OT-23 PDF

    2N5551 fairchild

    Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    2N5551 MMBT5551 2N5551 OT-23 2N5551 fairchild 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197 PDF

    2N5551 SOT23

    Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


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    2N5551- MMBT5551 2N5551 OT-23 MMBT5551 2N5551 SOT23 2N5551 circuit 2N5551 2N5551 fairchild PDF

    2N5551

    Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5551 MMBT5551 2N5551 OT-23 BF242 CBVK741B019 F63TNR MMBT5551 PN2222N PDF

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23 PDF

    2n5551

    Abstract: 2N5551 SOT23 MMBT5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5551 MMBT5551 2N5551 OT-23 2N5551 SOT23 MMBT5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol


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    2N5551 MMBT5551 2N5551 OT-23 PDF

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol


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    2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551 PDF

    2n5551

    Abstract: 2N5551 SOT23
    Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1


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    2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23 PDF

    BF242

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol


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    2N5551 MMBT5551 2N5551 OT-23 OT-23 BF242 PDF

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU PDF

    2N5830

    Abstract: transistor 2N5830 2N5551 npn general purpose high voltage amplifier
    Text: 2N5830 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5830 2N5551 2N5830 transistor 2N5830 npn general purpose high voltage amplifier PDF

    transistor 2N5830

    Abstract: No abstract text available
    Text: 2N5830 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N5830 2N5551 transistor 2N5830 PDF

    MPSL01

    Abstract: transistor 2001 H1 2N5551 CBVK741B019 F63TNR PN2222N
    Text: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    MPSL01 2N5551 MPSL01 transistor 2001 H1 CBVK741B019 F63TNR PN2222N PDF

    2N4410

    Abstract: 2N4410 Transistor 2N5551
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4410 2N5551 2N4410 2N4410 Transistor PDF

    2N4410

    Abstract: 2N5551 CBVK741B019 F63TNR PN2222N to92 lead code d
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4410 2N5551 2N4410 CBVK741B019 F63TNR PN2222N to92 lead code d PDF

    transistor equivalent 2n5551

    Abstract: 2N5551 circuit tnr* G series 2N5551 CBVK741B019 F63TNR MPSL01 PN2222N
    Text: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    MPSL01 2N5551 transistor equivalent 2n5551 2N5551 circuit tnr* G series CBVK741B019 F63TNR MPSL01 PN2222N PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


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    2N4410 2N5551 PDF

    2n4410

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • 2N4410 . TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS


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    2N4410 2N5551 2n4410 PDF

    2N4410

    Abstract: No abstract text available
    Text: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS


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    2N4410 2N5551 2N4410 PDF

    Untitled

    Abstract: No abstract text available
    Text: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL01 NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.


    OCR Scan
    MPSL01 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


    OCR Scan
    2N5551 MMBT5551 2N5551 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR i 2N5830 . TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


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    2N5830 2N5551 impaire10 PDF