2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551-
MMBT5551
MMBT5551
2N5551
OT-23
2N5551
2N5551B
tr 5551
2N5551 SOT23
BR 5551
2N5551 circuit
2N5551BU
BR N 5551
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551
MMBT5551
2N5551
OT-23
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2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551
MMBT5551
2N5551
OT-23
2N5551 fairchild
2N5551 SOT23
2N5551 circuit
2N5551 SOT-23
MMBT5551
MMBT5551 3s
sot23 marking 3S
marking 3s
SM 3197
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2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
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2N5551-
MMBT5551
2N5551
OT-23
MMBT5551
2N5551 SOT23
2N5551 circuit
2N5551
2N5551 fairchild
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2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
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2n5551
Abstract: 2N5551 SOT23 MMBT5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
2N5551 SOT23
MMBT5551
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Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
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2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
transistor 2n5551
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2n5551
Abstract: 2N5551 SOT23
Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1
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2N5551
MMBT5551
2N5551
OT-23
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
2N5551 SOT23
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BF242
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C C B E TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol
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2N5551
MMBT5551
2N5551
OT-23
OT-23
BF242
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2N5551B
Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
OT-23
2N5551YIUBU
2N5551YTA
2N5551TA
2N5551CBU
2N5551IUTA
2N5551B
2n5551yc
sot-23 marking NE
2N5551BU
2N5551Y
5551n
transistor marking code ne SOT-23
2n5551c-y
2N5551YBU
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2N5830
Abstract: transistor 2N5830 2N5551 npn general purpose high voltage amplifier
Text: 2N5830 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5830
2N5551
2N5830
transistor 2N5830
npn general purpose high voltage amplifier
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transistor 2N5830
Abstract: No abstract text available
Text: 2N5830 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5830
2N5551
transistor 2N5830
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MPSL01
Abstract: transistor 2001 H1 2N5551 CBVK741B019 F63TNR PN2222N
Text: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSL01
2N5551
MPSL01
transistor 2001 H1
CBVK741B019
F63TNR
PN2222N
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2N4410
Abstract: 2N4410 Transistor 2N5551
Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4410
2N5551
2N4410
2N4410 Transistor
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2N4410
Abstract: 2N5551 CBVK741B019 F63TNR PN2222N to92 lead code d
Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4410
2N5551
2N4410
CBVK741B019
F63TNR
PN2222N
to92 lead code d
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transistor equivalent 2n5551
Abstract: 2N5551 circuit tnr* G series 2N5551 CBVK741B019 F63TNR MPSL01 PN2222N
Text: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSL01
2N5551
transistor equivalent 2n5551
2N5551 circuit
tnr* G series
CBVK741B019
F63TNR
MPSL01
PN2222N
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Untitled
Abstract: No abstract text available
Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N4410
2N5551
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2n4410
Abstract: No abstract text available
Text: SEMICONDUCTOR • 2N4410 . TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS
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2N4410
2N5551
2n4410
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2N4410
Abstract: No abstract text available
Text: SEMICONDUCTOR ¡m 2N4410 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and sw itches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS
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2N4410
2N5551
2N4410
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Untitled
Abstract: No abstract text available
Text: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL01 NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.
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MPSL01
2N5551
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Untitled
Abstract: No abstract text available
Text: S g M iS D r o U C roR :w 2N5551 MMBT5551 Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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2N5551
MMBT5551
2N5551
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR i 2N5830 . TO-92 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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2N5830
2N5551
impaire10
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