MPSL01

Abstract: motorola 1N914 diode datasheet 1N914
Contextual Info: MOTOROLA Order this document by MPSL01/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL01 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 120 Vdc Collector – Base Voltage VCBO

MPSL01

Abstract: MPS-L01 1N914
Contextual Info: ON Semiconductort Amplifier Transistor MPSL01 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 120 Vdc Collector–Base Voltage VCBO 140 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 150 mAdc

national PN2222A

Contextual Info: NPN Transistors NPN General Purpose Amplifiers and Switches V Device No. Case Style CBO V C EO V V Min (V) Min (V) Min Max 10 EBO MPSL01 TO-92 (92) 140 120 6 2N4400 TO-92 (92) 60 40 6 2N4401 TO-92 (92) 60 40 *CBO w (V> h FE @ 'c ft V C E Min Max (mA) 00

2N4401 NPN Switching Transistor

Abstract: MPSL01 2N4400 2N4401 2N4953 MPS6531 PN2222 PN2222A
Contextual Info: This NPN Transistors Material IT In □ NPN General Purpose Amplifiers and Switches continued t-1 b-1 ÜJ a Device No. Copyrighted CBO CEO (V) (V) (V) Min Min Min TO-92 (92) 140 120 TO-92 (92) 60 Case Style a □ jr a jr cr MPSL01 2N4400 UJ CE(SAT) EBO (nA) @

mpsl0

Contextual Info: S E M IC O N D U C T O R MPSL01 NPN General Purpose Amplifier T his d e vice is de sig n ed fo r general purpose, high voltage a m plifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. AbSOlUtG Maximum RâtinÇjS

2N5551 fairchild

Abstract: 2N5551 MPSL01
Contextual Info: SEMiCONDUCTQR MPSL01 NPN General Purpose Amplifier T his device is designed for general purpose, high voltage am plifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

transistor equivalent 2n5551

Abstract: 2N5551 circuit tnr* G series 2N5551 CBVK741B019 F63TNR MPSL01 PN2222N
Contextual Info: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSL01

Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL01 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage VCEO 120

Contextual Info: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL01 NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics.

Contextual Info: MPSL01 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 120 Vdc Collector −Base Voltage VCBO 140 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TA = 25°C

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSL01 TO-92 CBE Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION

Contextual Info: j SAM SUNG SE M IC O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073^0 â J 'T NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em lttsr V ilta fl« : Vcio=120V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPSL01

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR E MPSL01 TO-92 CBE BC Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage

ss8550

Abstract: MPSL01 2N5401 MPSL51 SS8050 SS9011 transistor D 667 C TRANSISTOR 2n5401
Contextual Info: j S A M S U N G S E M I C O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073*10 â J 'T 'í '9 - X i NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltt«rWiltafl«: Vdo=120V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSL01 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 120 Vdc Collector – Base Voltage

MPSL01

Abstract: npn general purpose high voltage amplifier npn general purpose amplifier 2N5551
Contextual Info: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPSL01

Abstract: transistor 2001 H1 2N5551 CBVK741B019 F63TNR PN2222N
Contextual Info: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MPSH19

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) 'cBO ^CE ^CB *CES 1FE 9 <|1A) 0 (V)' (mA) « (V) Max Max Min Max ^ ceo ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) (A) @Tc=25°c

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

SE4020

Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Contextual Info: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

BC327 BC337 noise figure

Abstract: bc550 bc560 MPSA18 BC550 BC337-25 CBE BC327 noise figure BC337 CBE BC327 CBE BC338/BC328 BC414C BC337 noise
Contextual Info: LO W N O IS E A N D GOOD H F E L IN E A R IT Y These devices are designed to use on applications where good H F E linearity and low noise characteristics are required: Instrumentation, Hi-Fi Preamplifier. NPN BC239 BC239A BC239B BC239C BC413 BC413B BC413C