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    2N5336 Price and Stock

    Microchip Technology Inc 2N5336

    NPN TRANSISTOR
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    Onlinecomponents.com 2N5336
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    Central Semiconductor Corp 2N5336

    Bipolar Power Transistor NPN Amplifier/Switch 5V 80V 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N5336)
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    Central Semiconductor Corp 2N5336 PBFREE

    Transistor GP BJT NPN 80V 5A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N5336 PBFREE)
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    Central Semiconductor Corp 2N5336 TIN/LEAD

    Transistor GP BJT NPN 80V 5A 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N5336 TIN/LEAD)
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    ACTIVE COMPNTS/DIODES 2N5336

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    Bisco Industries 2N5336 17
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    2N5336 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5336 Central Semiconductor Small Signal Transistors Original PDF
    2N5336 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=5 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=6 Original PDF
    2N5336 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5336 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5336 API Electronics Short form transistor data Short Form PDF
    2N5336 API Electronics Short form transistor data Short Form PDF
    2N5336 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N5336 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N5336 Diode Transistor Transistor Short Form Data Scan PDF
    2N5336 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5336 General Semiconductor Low Frequency Transistors Scan PDF
    2N5336 General Transistor Power Transistor Selection Guide Scan PDF
    2N5336 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5336 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5336 Unknown Silicon NPN Transistor Scan PDF
    2N5336 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5336 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5336 Unknown Vintage Transistor Datasheets Scan PDF
    2N5336 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5336 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N5336 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5336X

    Abstract: No abstract text available
    Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5336X O205AD) 1-Aug-02 2N5336X

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 2N5337 2N5338 2N5339 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high


    Original     		PDF 2N5336 2N5337 2N5338 2N5339 2N5336

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 6 Watt NPN silicon power. 13.36 Transistors Bipolar Silicon N. 1 of 1 Home Part Number: 2N5336 Online Store 2N5336 Diodes 6 Wat t NPN s ilic o n po w er. Transistors Enter code INTER3 at checkout.*


    Original     		PDF 2N5336 com/2n5336 2N5336

    Untitled

    Abstract: No abstract text available
    Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5336X O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5336 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5336X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N5336X O205AD) 17-Jul-02

    2N3507 JANTX

    Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
    Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C


    Original     		PDF 2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523

    2N5336

    Abstract: No abstract text available
    Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5336 O205AD) 1-Aug-02 2N5336

    Untitled

    Abstract: No abstract text available
    Text: 2N5336 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N5336 O205AD) 19-Jun-02

    2N5189

    Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV


    Original     		PDF 2N4930 2N4931 2N4943 2N5681 2N5682 2N5781 2N5782 2N5783 2N5189 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5336

    Abstract: 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11
    Text: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS


    Original     		PDF CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5336 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11

    2N5339

    Abstract: 2N5336 2N533 2n5337 jantx 2n5339 jantx 2N5337 2N5338 2N6190 2N6336 2n53
    Text: & / V E 2N5336 2N5337 2N5338 2N5339* S *also a v a ila b le as JAN, JANTX, JANTXV 5 AMPERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS PNP SILICON . . . designed for switching and wide band amplifier applications. • Low Collector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5336 2N5337 2N5338 2N5339* 2N6190 2N6193 2N533Â 2N5339 2N533 2n5337 jantx 2n5339 jantx 2N6336 2n53

    Untitled

    Abstract: No abstract text available
    Text: 7^ 2 ^ 5 3 ? 002=1335 7 • £ jl 1 ^ 3 2 -O S 2N5336/5337 2N5338/5339 SCS-THOMSON i&JCTHMOtgS S G S-TH0MS0N 3ÜE » HIGH CURRENT FAST SWITCHING APPLICATION DESCRIPTION The 2N5336, 2N5337, 2N5338 and 2N5339 are silicon epitaxial planar NPN transistors in Jedec


    OCR Scan     		PDF 2N5336/5337 2N5338/5339 2N5336, 2N5337, 2N5338 2N5339 2N5336/37/38/3 25/uF 10/LIS

    Untitled

    Abstract: No abstract text available
    Text: 8134693 SEMICOA MO DÉ 5 1 3 ^ 3 QDDOIEb 3 -Q\ NPN SILICON POWER TRANSISTORS Cont’d) Maximum Ratings Device Dissipation Type No. @ 25°C NPN (Case) Watts 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337 2N1617 2N4897 2N4150 2N5152


    OCR Scan     		PDF 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N5337

    LT 5337

    Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338
    Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 | 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.


    OCR Scan     		PDF 2N5336 2N5339 2N6190 2N6193 LT 5337 2N5339 2N6193, Motorola LN 7904 2n5337 2n5338 NS338

    2n5339

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F 13E D | L3L7254 0084542 1 | 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF L3L7254 O-205AD 2N6190 2N6193 2N5336 2N5337 2N5336 2N5339 2n5339

    2N5339

    Abstract: 2N5337 2N5336 2N5338 1B05A
    Text: 2N5336 2N5337 2N5338 2N5339 ♦I : * ' «trai sem iconductor CorpCentral Sem iconductor Corp. NPN SILICON TRANSISTOR 1 4 5 Adam s Avenue Hauppauge, N ew York 1 1 7 8 8 JEDEC TO-39 CASE 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824


    OCR Scan     		PDF 2N5336 2N5337 2N5338 2N5339 2N5338 2N5339 500mA 1B05A

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    2N5415

    Abstract: No abstract text available
    Text: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


    OCR Scan     		PDF 00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


    OCR Scan     		PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    2N5189

    Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
    Text: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION @ l c VCE VCE(SA T ) ® ' C (m A) (m A) (V) (V) h :E VCBO v CEO v EBO •CBO ® VCBO (V) (V) (V) (V) (M ) NF Cob <PF) •on (ns) *off (ns) (dB) *TYP *TYP TYP TYP TYP MAX MIN MIN MIN 200


    OCR Scan     		PDF 2N4930 2N4931 2N4943 2N4960 2N5022 2N5679 2N5680 2n5681 2N5682 2N5781 2N5189 2N5023 2N5058 2N5059 2N5109