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    2N497A Search Results

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    2N497A Price and Stock

    Semiconductor Technology Inc 2N497A

    Bipolar Junction Transistor, NPN Type, TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N497A 341
    • 1 $1.875
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    GTCAP 2N497A

    Bipolar Junction Transistor, NPN Type, TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N497A 11
    • 1 $3
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
    • 10000 $1.875
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    Motorola Semiconductor Products 2N497A

    Bipolar Junction Transistor, NPN Type, TO-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N497A 9
    • 1 $3
    • 10 $2.25
    • 100 $2.25
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    2N497A Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N497A Central Semiconductor Various Transistors Scan PDF
    2N497A Central Semiconductor Transistor Selection Guide Scan PDF
    2N497A General Diode Transistor Selection Guide Scan PDF
    2N497A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N497A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N497A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N497A Unknown GE Transistor Specifications Scan PDF
    2N497A Unknown GE Transistor Specifications Scan PDF
    2N497A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N497A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N497A Unknown Vintage Transistor Datasheets Scan PDF
    2N497A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N497A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N497A Semiconductor Technology Medium and High Power Silicon Transistors Scan PDF
    2N497A Semitronics Silicon Power Transistors Scan PDF

    2N497A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6ae diode

    Abstract: 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807 MSP100
    Text: POWER SILICON NPN Item Number Part Number I C S 10 20 2N10S0 2N1613A 2NS914 PT8890 PT8871 PT8871A MRF402 MRF402 ~~~~~~ 2S 30 2NS687 2NS688 2N2234 2N2234 2N2234 2NS710 2N6206 2N6206 ~~~~g~ 35 40 2N1092 MRF8003 2SC971 2N6202 2N6202 2N6202 2NS773 TIP61 ~g~~~~:~


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    PDF TRS701SS SRS7014 SRS7S04 SRSS014 MSP100 2NS922 2N4429 2N4428 2N1047 6ae diode 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N65s

    Abstract: 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555
    Text: DIGITRÔN ELECTRONIC CORP 3bE D • 2ñ4St.D7 OOGOOGS 7 ■ • qj DGE'-p Page t,6Î - DIQITRON ELECTRONIC« #2 CORE 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z


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    PDF 204EbD7 2N497AI 2N539 2N696A 2N728 2N871 2N922 2N498 2N539A 2N697 2N65s 2n907 2N936 2N797 2N706 2N906 2N777 2N945 2N964 2N555

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    2N3916

    Abstract: 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B 2N1445 2N1480 2N1700 2N1715
    Text: 1 OSE D • fll3b4Sfl □QGQSM7 5 SEMICONDUCTOR TEC H N O LO G Y , INC. 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _ FAX 407-P8fi-8914 T -o Z q -O I SILICON TRANSISTORS r M E D I U M A M D H IG H P O W E R _


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    PDF 0000S47 2N497A 2N498A 2N656 2N656A 2N657A 2N1445 2N1480 2N1700 2N1715 2N3916 2N2196 2N2197 2N3444 2N3053 NPN transistor 2N491B

    2N4249

    Abstract: 2N5055 2N719A 2N4248 2N547 2N657A 2N4250 2N4250A 2N4389 2N4964
    Text: bi CENTRAL SEMICONDUCTOR VCB VCE V EB hFE at lc VCE V V V min ma mA V V mA MHz pF 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 — — 120 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75


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    PDF 2N4389 O-106 2N5055 2N5140 2N5141 2N5228 2N5910 2N4249 2N719A 2N4248 2N547 2N657A 2N4250 2N4250A 2N4964

    2N5055

    Abstract: 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 2N4389
    Text: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 - TYPE NO. 2N4248 2N4249 2N4250 2N4250A 2N4964 2N4965 2N5086 2N5087 2N5378 2N5379 Vcb V 40 60 40 70 50 50 60 60 40 40 VCE V eb V V 5 40 60 5 40 5 5 60 5 40 40 5 50 3 3 50 30 5 30 5 hFE


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    PDF 2N4389 O-106 2N5055 2N5140 T0-106 2N5141 2N5228 2N5910 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Text: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


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    PDF 2N941* 2N942* 2N943* 2N944* 2N945* 2N946* 2N1676 2N1677 2N1917* 2N1918* 2N3920 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N4248

    Abstract: 2N4249 2N4250 2N4250A 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910
    Text: bl SEMICONDUCTOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75 0.6 0.4 0.15 — — 120 c


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    PDF 2N4389 O-106 2N5055 2N5140 T0-106 2N5141 2N5228 2N5910 2N4248 2N4249 2N4250 2N4250A

    Untitled

    Abstract: No abstract text available
    Text: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE VCE s V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 — — 120 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75


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    PDF 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 2N4248 2N4249 2N4250 2N4250A

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Text: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


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    PDF 2N338 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A 2NS404 Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204