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Abstract: No abstract text available
Text: 2N4942 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N4942
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BC137
Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
Text: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020
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NB023FL
NB023FZ
2N4285
2SA987F
NB021EV
NB021FV
NB023EV
NB023FV
2SA987E
2SA880
BC137
LM3661TL-1.40
G2025
LOW-POWER SILICON PNP
ST8500
BC137 800
BCY90
NB021
BCY91
2N85
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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LS422
LS423
LS424
LS425
LS426
LS832
LS833
LS4391
LS5911
E112 jfet
siliconix E412
NPD5564
jfet e300
NPD5566
DATA SHEET OF FET BFW10
E402 dual jfet
E430 jfet
E310 JFET N
NPD5565
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2N4858 TEXAS
Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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O-126
O-126var
2S8549
2S8527
2S8528
2S81217
KSA931
2N3468
2S8733
2N4858 TEXAS
2N4872
SIEMENS 5SN
2N4433
Qualidyne
2N4418
transtek
40391 RCA
2N4417
api 560
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2SC642A
O-204AA/TO-3:
2SC643
2N4030DIE
2C4030
2SC643A
2SK1045
2SK1048
2SK1050
2SK1044
2SD2791
2SK1011
2sd2498
2SD299
2SD300
2SD373
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API 160
Abstract: 2N4418 2N4889 transtek ha7723 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E
Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII
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BF470S
BF472
BF472S
HA7725
HA7734
HA7737
HA7723
API 160
2N4418
2N4889
transtek
2N4906 MOTOROLA
2N4881
Siliconix 2n4881
2N4947
2SA1370E
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NPD5564
Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership
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IntegraU404
LSU405
LSU406
LS841
LS842
LS421
LS422
LS423
LS424
NPD5564
NPD5566
BFY91
IMF3958
2N3050
NF5458
Fairchild E212
MP842
J9100
SST5638
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2N3816
Abstract: 2N999 2N3816A 2N3817 2N3817A 2N3838 2N4937 2N4938 2N4939 2N4940
Text: Discrete Devices U IO U C IC Tra n sisto rs Cont. Differential and Dual Amplifiers (Cont.) L ic ¥ iu c ;> E le c tric a l C h a ra cte ristics @ 25° C (O ne Sid e ) M a x im u m R a tin g s A m b ie n t P q Type P o la rity One Both Side Sides V c E lS a t ) @ I c / I b
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2N3816
2N3816A
2N3817
2N3817A
2N4937
T0-78
2N4855
2N997
2N998
2N999
2N3838
2N4938
2N4939
2N4940
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27TfC
1N5438
tfc 5630
2N5161
germanium
2N4193
1N1319
A2023 transistor
2N217
1N5159
transistor bf 175
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2n3817
Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
Text: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier
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75T73fc
2604/JA
2605/JA
54BSC
O-116)
14-Lead
100BSC
2n3817
2N3804
2N3800
2N3802
2N3812
2n3816
raytheon emitter pad
2N381
2N4942
raytheon npn
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n3806
Abstract: 2n3811 motorola 2N3813 2N4942 2n3817 motorola 2N3816 2N3807 2N3808 2N3810 2N3810A
Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) a v BE mV Max hFE2 Gp dB Min {on ns Max VC£ <C (sat) _ Volts I l B Max I to * w 71 Subscript ID Ref. Point TYPE NO. ° 2 § >f r? hFE1 0.5 0.5 0.5 0.5 0.5 A A A A A 60 60 60 60 60
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N3806
2N3807
2N3808
2N3809
2N3810
2N3810A
2N4016
2N4854
2N4937
2N4939
2n3811 motorola
2N3813
2N4942
2n3817 motorola
2N3816
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2N3800
Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro
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29B52595F13
52595F09
2N3800
germanium
diode germanium tu 38 e
2n4051 motorola
2N4280
2N3980
1N3492
MC710F
2N4276
2n3817
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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e420 dual jfet
Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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