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    2N3714 Price and Stock

    NTE Electronics Inc 2N3714

    TRANS NPN 80V 10A TO3
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    DigiKey 2N3714 Bag 59 1
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    Motorola Mobility LLC 2N3714

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    Bristol Electronics 2N3714 4 2
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    Motorola Semiconductor Products 2N3714

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    New Jersey Semiconductor Products, Inc. 2N3714

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    Bristol Electronics 2N3714 5,155 1
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    Others 2N3714

    Bipolar Junction Transistor, NPN Type, TO-3
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    Find more 2N3714 price and stock on Findchips.com

    2N3714 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3714 Comset Semiconductors Epitaxial-Base NPN - PNP - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3714 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N3714 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3714 Boca Semiconductor SILICON NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3714 Central Semiconductor BJT, NPN, Power Transistor, IC 10A - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3714 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    2N3714 Diode Transistor TO-3 / Various Transistor Selection Guide Scan PDF
    2N3714 Diode Transistor 35 to 500V Transistor Selection Guide Scan PDF
    2N3714 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3714 General Diode Transistor Selection Guide Scan PDF
    2N3714 General Transistor Power Transistor Selection Guide Scan PDF
    2N3714 Mospec 10 AMPERE POWER TRANSISTOR NPN SILICON 60-80 VOLTS 150 WATTS Scan PDF
    2N3714 Mospec 80V Silicon NPN power high transistor - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=10 / Hfe=25-90 / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N3714 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3714 Motorola The European Selection Data Book 1976 Scan PDF
    2N3714 Motorola 10A Power Transistors Silicon NPN Scan PDF
    2N3714 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3714 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3714 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3714 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2N3714 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3792

    Abstract: 2N3715 PNP 2N3791 2N3716 2N3713 2N3714 2N3789 2N3790 2N3791
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 PNP 2N3791 2N3713 2N3714 2N3789 2N3790

    2N3716

    Abstract: 2N3714 2N3715 2N3713 2n3792 PNP 2N3791 2N3789 2N3790 2N3791 NPN transistor 2n3713
    Text: 2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP


    Original     		PDF 2N3713/2N3714/2N3715/2N3716 2N3789/2N3790/2N3791/2N3792 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 2N3714 2N3713 PNP 2N3791 2N3789 2N3790 NPN transistor 2n3713

    044H11

    Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S


    Original     		PDF 044H10 KSP1152 KSP1172 OT7A09 OT7S09 2N3714 B0245B 044H11 KT808B kt808BM BJG 36 kt808 2s021 B0313 2n1810

    2N3714

    Abstract: No abstract text available
    Text: 2N3714 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3714 O204AA) 31-Jul-02 2N3714

    Untitled

    Abstract: No abstract text available
    Text: 2N3714 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3714 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3714 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N3714 O204AA) 18-Jun-02

    2N3714

    Abstract: transistor 2515
    Text: 2N3714 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPIBASE TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197)


    Original     		PDF 2N3714 O-204AA) 2N3714 transistor 2515

    2N2101

    Abstract: 2N3713 2N4130 2N5632 t031
    Text: industrial power transistors 134 SILICON NPN •TRANSISTORS 1 0 Amp TYPE NUMBER CASE SIZE 2N2101 2N3713 2N3714 2N3715 2N3716 2N4130 2N5632 2N5633 2N5634 80T7711 80T7712 80T7713 80T7714 80T7715 80T7716 SOT7731 80T7732 80T7733 80T7734 80T7735 80T7736 80T7741


    Original     		PDF O-111 2N2101 2N3713 2N3714 2N3715 2N4130 2N5632 t031

    2N3714SMD

    Abstract: No abstract text available
    Text: 2N3714SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original     		PDF 2N3714SMD O276AB) 15-Aug-02 2N3714SMD

    Untitled

    Abstract: No abstract text available
    Text: 2N3713 2N3714 2N3715 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for


    Original     		PDF 2N3713 2N3714 2N3715 2N3716 2N3713, 2N3714, 2N3715, 2N3716 N3716)

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2N4122

    Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
    Text: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741


    OCR Scan     		PDF DDD44 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N4122 2N4121 2N4134 2n3771 2N4080 2N4135

    2N3715

    Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
    Text: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3714 2N3716 2N3713, 2N3714) 2N2716 lc50a

    Untitled

    Abstract: No abstract text available
    Text: _ _ ADVANCED 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR SEMI CONDUCTOR - flâ D Ë loaSÔ B S 4 82D 0 0 0 4 4 0000044 D S IL IC O N _ _ _ _ « _ _T Ü A P J S iS T O fiS Pd @ Tc=25°C DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741 2N3742 2N3743

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC t>Ì DE _ ”J~Z-3 3 _-/3 00012Ö0 b olitron Devices, Inc. S P E C I F I C A T I O N S NO.: 2N3714 TYPE: NPN E PI BASE CASE: TO -3 MAXIMUM RATINGS Voltage, Collector to Base VCB0 . Voltage, Collector to Emitter (V CE0) .


    OCR Scan     		PDF 2N3714 500MA

    2N3713

    Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
    Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz


    OCR Scan     		PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1

    Untitled

    Abstract: No abstract text available
    Text: NEU ENGLAND SEMICONDUCTOR SIE I • b S b m i B 000005S 370 * N E S 2-50 A V ceo sus = 3 5 -5 0 0 V fr =0 .2 -5 0 MHz NPN TO-3 lc (M A X ) — Case 803 Case 804 Type No. 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447 2N3448 2N3713 2N3714 2N3715


    OCR Scan     		PDF 000005S 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442 2N3445 2N3446 2N3447

    3713

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­


    OCR Scan     		PDF 2N3713/14/15/16 2N3789/90/91/92 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 3713

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Powered -a by 18 T0-3 CAN PACKAGE SERIES n 1 TO-3 ICminer.com H CD > Ö H H n 70 m Electronic-Library —3 Application MAX. fc Type No. NPN Power Am p. 2SC1195 PC PNP 2SA739 f T TYP. v CE(sat) M A X < *v CB0 Tc=2!?C I ; DC-DC Converter Series Reg. ! v CE0


    OCR Scan     		PDF

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    NES 2N5672

    Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789
    Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé­ ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE


    OCR Scan     		PDF 0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867