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    New Jersey Semiconductor Products, Inc. 2N3313

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    Bristol Electronics 2N3313 350 2
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    New Jersey Semiconductor Products Inc 2N3313

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    Quest Components 2N3313 280
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    2N3313 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N3313 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3313 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3313 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3313 Unknown Vintage Transistor Datasheets Scan PDF
    2N3313 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3313 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3313 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3313 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3313 Unknown GE Transistor Specifications Scan PDF
    2N3313 Semitron Germanium Power Transistors Scan PDF
    2N3313 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF

    2N3313 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3313 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3313 StyleTO-36

    Untitled

    Abstract: No abstract text available
    Text: 1234567879A8BC 1234567839AB2CD3 F=A'88$3J8'8 8F37&3 @7%3D?38&3?3 3?'3&4.&F3 F8778&32%F'8?3 B53 D73 5!"##5!3 9$%#&31$#!'33 E1223 BC3D345EA3F735EA33 3 3 E13 BC3D345EA3F735EA323D33133 3 1 E23 A78F873 43


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    PDF 1234567879A8BC 1234567839AB2CD3 E1223 BC3D345EA3F73 3D345EA33 3D345EA

    germanium

    Abstract: pnp germanium to36 AD167 2n2063 ASZ1018 2n1182 2N1202 2N1666 2N2063A AD166
    Text: POWER GERMANIUM TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max ON) r HFE fT ICBO Max Max (CE)sat Max ~Oper Max Min (Hz) (A) (8) (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . . .15 .


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    PDF 2N2563 2N2567 2N1202 2N1203 2N1044 2N1045 2N553 2N1245 2N1246 2N1971 germanium pnp germanium to36 AD167 2n2063 ASZ1018 2n1182 2N1666 2N2063A AD166

    Untitled

    Abstract: No abstract text available
    Text: 123456578933AB 1234567839AB2CD3 73 73 73 73 73 D:A 88%3I8(8 8F37'3 =7&3B<38'3<3 3<(3'4-'F3 D8778'32&F(8<3 3F3?))3GH8+3 B53 D7 3!5"#$ $5"3 9%&$'31% $"(33 E1223 BC3D345EA3F735EA33 53 3 E13 BC3D345EA3F735EA323D33133


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    PDF 123456578933AB 1234567839AB2CD3 E1223 BC3D345EA3F73 3D345EA33 3D345EA

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    2n2082

    Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
    Text: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )


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    PDF 2N3311 2N3312 2N3313 2N33ff 2N3314 2N3315 1N5555 1N5555 1N5556 1N5557 2n2082 2N2152 2N2075 2N2076 2N2153 2N2156 2N2079 2N2077 2N2078

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor