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    2N2192A Search Results

    2N2192A Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2192A Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=1 / Hfe=100-300 / fT(Hz)=50M / Pwr(W)=0.8 Original PDF
    2N2192A Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2192A Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N2192A Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2192A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2192A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2192A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2192A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N2192A Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N2192A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2192A Unknown Vintage Transistor Datasheets Scan PDF
    2N2192A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2192A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2192A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2192A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2192A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2192A Unknown GE Transistor Specifications Scan PDF
    2N2192A Unknown GE Transistor Specifications Scan PDF
    2N2192A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2192A Unknown Cross Reference Datasheet Scan PDF

    2N2192A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2192A

    Abstract: No abstract text available
    Text: 2N2192A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)


    Original     		2N2192A O205AD) 1-Aug-02 2N2192A PDF

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200 PDF

    2N2192

    Abstract: No abstract text available
    Text: 2N2192A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)


    Original     		2N2192A O205AD) 19-Jun-02 2N2192 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2192A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016)


    Original     		2N2192A O205AD) 17-Jul-02 PDF

    2N4945

    Abstract: BC211-6 TP5816 LOW-POWER SILICON NPN TL3569
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 2N4945 BC211-6 TP5816 LOW-POWER SILICON NPN TL3569 PDF

    2SC1766C

    Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


    Original     		2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab PDF

    2SC1675L

    Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
    Text: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A


    Original     		PDF

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


    OCR Scan     		2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405 PDF

    tt 2194

    Abstract: 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N 2n2243
    Text: TYPES 2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, N-P-N SILICON TRANSISTORS B U L L E T IN • I NO. D L S 733571, M AR C H 1 9 6 3 -R E V IS E D M A R C H 1973 F O R M E D IU M -P O W E R S W IT C H IN G A N D A M P L IF IE R A P P L IC A T IO N S


    OCR Scan     		2N2192, 2N2192A. 2N2193. 2N2193A. 2N2194, 2N2194A, 2N2243 tt 2194 2N2193 2N2193A 2N2192 TEXAS INSTRUMENTS 2N2192 NS2N PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE­ max


    OCR Scan     		bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B PDF

    2N2310

    Abstract: 2N2102A 2N2351 2N1990 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311
    Text: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B


    OCR Scan     		2N1990 2N2008 2N2102 2N2102A 2N2192 2N2192A 2N2192B 2N2193 150/151A 2N2352 2N2310 2N2351 T046 2N2309 2N2243 2N2193B 2N2193A 2N2311 PDF

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


    OCR Scan     		TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419 PDF

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


    OCR Scan     		BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF

    2n2222a SOT23

    Abstract: 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1132 2N1483 2N1484
    Text: L -S tl'-O f " T - 3 3 - o7 iS E M E L A B MANUFACTURING • 37E SEMELAB LTD 6133167 □ □ □0CH 7 Package v CEO "2N 708'\ CV-0 2N 697 CV-0 2N 930 4 CV-0 2N1132 CV-0 2N1483/ CV-0 BS-0 NPN NPN NPN PNP NPN T018 T039 T018 T039 T08 15 40 45 35 40 0.1 0.5 0.1


    OCR Scan     		T-33-Ã 2N1132 2N1483/ 2N1484^ 2N1485 2N1486 2N1613 2N1711 2N2060 2N2192 2n2222a SOT23 2N3904DCSM 2n1485 2N2453 2N3680 2n2222 sot23 BFX81 2N1483 2N1484 PDF

    N2219

    Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
    Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039


    OCR Scan     		133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2453 2N2243 Hirel 2N2192A PDF

    transistor t05

    Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
    Text: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200


    OCR Scan     		TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 N3830 transistor t05 TIS60m 2N1889 2N1890 2N1893 PDF

    2n11

    Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
    Text: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10


    OCR Scan     		2N910 2N911 2N912 2N956- 2N1052 2N1053 2N1054 2N1055 CBR30 0000S23 2n11 2N1116 2N1117 2N1420 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF