2N18 Search Results

2n1882

Contextual Info: DIGITRON SEMICONDUCTORS 2N1881-2N1885 SILICON CONTROLLED RECTIFIER 1 AMP Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

TO-209AC

Abstract: 2N1805 2N1806 2N1807 2N4361 2N4362 2N4363 2N4364 2N4365 2N4366
Contextual Info: Silicon Controlled Rectifiers 2N4361 - 2N4367 & 2N1805 - 2N1807 Dim A B C D E F G H J K M N P Inches M illim e te r Minimum Maximum Minimum 1.050 1.060 1.161 6.144 7.375 .827 .286 .948 .499 .280 .600 .150 .295 - 5.850 6.850 .797 .276 - .425 .260 .500

2N1893S

Abstract: 2N1893 transistor PT 4500
Contextual Info: Data Sheet No. 2N1893S Generic Part Number: 2N1893 Type 2N1893S Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/182 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-39 case. • Also available in chip form using

2n2405

Abstract: 2N1893
Contextual Info: 4302271 üün7ô3 4 HHAS P o w e r Tran sistors File N u m b e r 34 Medium-Power Silicon N-P-N Planar Transistors 2N1893, 2N2405 I ' 3 3 - 0 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

Contextual Info: 2N1893 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N1893J • JANTX level (2N1893JX) • JANTXV level (2N1893JV)

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a t a S h e e t No. 2 N 1 8 9 3 $ id L SEMICONDUCTORS Type 2N1893 G e n e ric P a rt N u m b e r: 2N 1893 Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV

GE C106Y

Abstract: SFOR1A42 TO-202AB To226AB DRA03A 2SF101B TO202AB 2SF101 SN200 HS34S
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SCRs, VDRM 5 10 MMBS5060 BRX44 BRX44 C103Y C203Y S1Y BRY55•30 BRY55S30 MCR102 2N5060 ~~~gg1 15 20 S031E C205Y C205Y C205Y 2N1876A 2N1876 2N1870 2N1870A ~~3~1~1 25 30 2N3559 C106Y SN200 2N6332 C107Y2 C107Y4

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2N1711

Abstract: 2N1890 equivalent transistor 2N1711 transistor 2N1711 2N171-1 MIL-PRF-19500/225
Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices Qualified Level 2N1711 JAN JANTX 2N1890 MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C 1 @ TC = +250C (2)

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

D 4206 TRANSISTOR

Abstract: transformer step up step down transformer 2N1874A 1N457 1N540 2N1870A 2N1871A 2N1872A 2N1874A JAN
Contextual Info: INCH-POUND MIL-PRF-19500/198E 25 March 2008 SUPERSEDING MIL-PRF-19500/198D 4 September 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, THYRISTORS, TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A, JAN Inactive for new design after 4 September 2007.

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

Contextual Info: 2N1889 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)75 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)50m

Contextual Info: 2N1868 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: 2N1866 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35â V(BR)CBO (V)35 I(C) Max. (A)50m Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.40 h(FE) Max. Current gain.

Contextual Info: 2N180 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.50Â h(FE) Max. Current gain.

Contextual Info: DIGITRON SEMICONDUCTORS 2N1842-2N1850A TR1010-TR9010 SILICON CONTROLLED RECTIFIER Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Contextual Info: M 2N 1893 NPN SILICON PLANAR M IC R O EPITAXIAL TRANSISTOR EL-ECSnrFRQrsllCSS CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

2n1833

Abstract: 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639
Contextual Info: TYPES 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 7.nm 2N871, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • APX bbS3^31 QD3flD77 T16 2N1893 SILICON TRANSISTOR High voltage n-p-n transistor in a TO-39 metal envelope with the collector connected to the case. It is intended for use in high performance amplifier, oscillator and switching applications.