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    IPP80N06S2L-11 Price and Stock

    Rochester Electronics LLC IPP80N06S2L11AKSA2

    MOSFET N-CH 55V 80A TO220-3-1
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    DigiKey IPP80N06S2L11AKSA2 Bulk 21,652 321
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    Infineon Technologies AG IPP80N06S2L11AKSA1

    MOSFET N-CH 55V 80A TO220-3
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    DigiKey IPP80N06S2L11AKSA1 Tube
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    Infineon Technologies AG IPP80N06S2L11AKSA2

    MOSFET N-CH 55V 80A TO220-3
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    DigiKey IPP80N06S2L11AKSA2 Tube
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    Avnet Americas IPP80N06S2L11AKSA2 Tube 4 Weeks 387
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    Rochester Electronics IPP80N06S2L11AKSA2 21,652 1
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    Infineon Technologies AG IPP80N06S2L11

    OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA IPP80N06S2L11 305
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    IPP80N06S2L-11 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPP80N06S2L-11 Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 11.0 mOhm; ID (max): 80.0 A; RthJC (max): 0.95 K/W; Original PDF
    IPP80N06S2L11AKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 Original PDF
    IPP80N06S2L11AKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO220-3 Original PDF