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Infineon Technologies AG 2N0609 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2N0609		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	2N0609		4,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others 2N0609 INSTOCK
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Chip 1 Exchange	2N0609		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2N0609 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2n0609 Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263 Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2 Avalanche rated V P- TO220 -3-1 dv/dt rated Type SPP80N06S2-09 Package	Original	PDF	SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263
2n0609 Abstract: 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09 Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V R DS on 9.1 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2-09	Original	PDF	SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09
2n0609 Abstract: 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09 Text: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS=Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 55 RDS on 9.1 m ID 80 A P-TO263-3-2 Type Package Ordering Code	Original	PDF	SPP80N06S2-09 SPB80N06S2-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6025 2N0609 P-TO263-3-2 2n0609 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09
2n0609 Abstract: 2n0609 data sheet smd G47 IPB80N06S2-09 2N060 SP0002-18740 IPP80N06S2-09 ANPS071E PG-TO263-3-2 SP0002-18741 Text: IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature	Original	PDF	IPB80N06S2-09 IPP80N06S2-09 PG-TO263-3-2 PG-TO220-3-1 SP0002-18741 2N0609 2n0609 2n0609 data sheet smd G47 IPB80N06S2-09 2N060 SP0002-18740 IPP80N06S2-09 ANPS071E PG-TO263-3-2 SP0002-18741
2n0609 Abstract: TC200 Q67060-S6025 Text: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 9.1 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	PDF	SPP80N06S2-09 SPB80N06S2-09 P-TO220-3-1 P-TO263-3-2 2N0609 2N0609 P-TO220-3-1 Q67060-S6025 TC200
2n0609 Abstract: 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025 Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 9.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package	Original	PDF	SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 2N0609 Q67060-S6027 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025