IPB80N06S2-09 Search Results
IPB80N06S2-09 Price and Stock
Infineon Technologies AG IPB80N06S209ATMA2MOSFET N-CH 55V 80A TO263-3 |
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IPB80N06S209ATMA2 | Digi-Reel | 777 | 1 |
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IPB80N06S209ATMA2 | Reel | 12 Weeks | 1,000 |
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IPB80N06S209ATMA2 | 921 |
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IPB80N06S209ATMA2 | 8,000 | 1,000 |
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IPB80N06S209ATMA2 | 87 | 1 |
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IPB80N06S209ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPB80N06S209ATMA1MOSFET N-CH 55V 80A TO263-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S209ATMA1 | Reel |
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IPB80N06S209ATMA1 | 429 |
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Infineon Technologies AG IPB80N06S209OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S209 | 9,669 |
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IPB80N06S2-09 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB80N06S2-09 |
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Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 8.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; | Original | |||
IPB80N06S209ATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original | |||
IPB80N06S209ATMA2 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 | Original |