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    2N TRANSISTOR HIGH Search Results

    2N TRANSISTOR HIGH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    BLF Rochester Electronics BLF278 - VHF Push-Pull Power VDMOS Transistor Visit Rochester Electronics Buy

    2N TRANSISTOR HIGH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 6032

    Abstract: 2N6033 sss 1120 2n6032 60322n transistor 6032 mh
    Text: 2N 6032 2N 6033 NPN SILICON TRANSISTORS,EPITAXIAL COLLECTOR TRANSISTORS SILICIUM,NPN' COLLECTEUR EPITAXIE - High current, high speed, high power transistor Transistor rapide fort courant, forte puissance - Fast switching and am plifier applications Transistors de commutation et d'amplification rapide


    OCR Scan     		PDF CB-19 transistor 6032 2N6033 sss 1120 2n6032 60322n transistor 6032 mh

    TO111 package

    Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
    Text: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,


    OCR Scan     		PDF TWX910-950-1942 TO111 package 2N278 2N2879 2N2880 2N2877 2N2878

    2N5657

    Abstract: 2N5655
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 5655 2N 5656 2N 5657 Plastic NPN Silicon H igh-Voltage Power Transistor ‘Motorola Pr*ferrod Dtvlc« . . . designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays.


    OCR Scan     		PDF 2NS655 2N5656 2N5657 2N5657, 2N5657 2N5655

    transistor 40410

    Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40410 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636

    3440S

    Abstract: 2N3440S hFE-10 G-2675
    Text: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 3440S 3440S 5415S. 2N3440S G-2675 10/us 2N3440S hFE-10 G-2675

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


    OCR Scan     		PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111

    2N4391

    Abstract: 2n4393 2N43 J3060 2N4392
    Text: PRELIMINARY SPECIFICATION SEC FIELD-EFFECT TRANSISTORS ELECTRON DEVICE 2N4391,2N4392,2N4393 HIGH SPEED SW ITCHING AND CHOPPER N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR DESCRIPTION The 2N 4391, 2N 4392, 2N 4393 are depletion mode ju n ctio n field effect transistors, designed fo r high speed sw itching and


    OCR Scan     		PDF 2N4391 2N4392 2N4393 2N4391) 2n4393 2N43 J3060

    BIPOLAR TRANSISTOR 2n

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N5655/D SEMICONDUCTOR TECHNICAL DATA 2N 5655 2N 5656 2N 5657 P lastic NPN Silicon H ig h -V o ltag e Pow er Transistor . . . designed for use in line-operated equipment such as audio output amplifiers; low -current, high-voltage converters; and AC line relays.


    OCR Scan     		PDF 2N5655/D BIPOLAR TRANSISTOR 2n

    2N6660

    Abstract: 2N6659 2N6661 TP 1322 2N6661 transistor
    Text: 2N 6659 2N 6660 2N6661 N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed fo r application as low-power, high-frequency inverters and line drivers. Features: • Direct interface to C-MOS, T T L , etc.


    OCR Scan     		PDF 2N6659 2N6660 2N6661 N6660 2N6661 bbS3T31 D03b22S 2N6660 2N6659 TP 1322 2N6661 transistor

    2N3440S

    Abstract: No abstract text available
    Text: 2N 3440S SILICON PLANAR NPN H IG H -V O LTA G E AM PLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Je d ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am p lifie r applications. The com plementaryPNP type is 2N 5415S.


    OCR Scan     		PDF 3440S 3440S JedecTO-39 5415S. 2N3440S 300/is, 2N3440S

    5415S

    Abstract: No abstract text available
    Text: 2N 5415S SILICON PLANAR PNP H IG H - V O L T A G E A M P L IF IE R The 2N 5415S is a silicon planar epitaxial PNP transistor in Jed ecT O -39 metal case, intend­ ed fo r high voltage switching and linear am plifier applications. The com plementary NPN type is 2N 3440S.


    OCR Scan     		PDF 5415S 5415S JedecTO-39 3440S. -175V -150V -50mA

    555T

    Abstract: me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555
    Text: fllultipl* Transistor/ Darlington amplifier/ r Electrical C ha racteristics @ M a x im u m R atin gs T Y P E NO. PD C BVc b O LV CEO h jrg e v EBO @ T a = 25°C ME 2N 2N 2N 2N 5308 5305 5306 5307 5308 BC 516 BC 517 m in. 250m W 500m W 5Q 0m W 500m W 500m W


    OCR Scan     		PDF 250mW 300mA 60MHz O-106 500mW O-92B 555T me 555 IC 555 ML555T ML555V 12v to 5v 555 ML555 555 amplifier 2N5305 TTL 555

    2369A

    Abstract: transistor 2369a
    Text: 2N 2369A SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 jUA to 100 m A.


    OCR Scan     		PDF

    2369A

    Abstract: 2n2369a
    Text: 2N 2369A SILICON PLANAR NPN HIGH-SPEED S ATU R ATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 ,uA to 100 mA.


    OCR Scan     		PDF

    2N6519

    Abstract: 2N6520 2N652
    Text: 2N 6519 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 “ C


    OCR Scan     		PDF 2N6519 2N6520 100fjA, -100mA 20MHz -100V -100V, 300us, 7Tb4142 00E5D4Ã 2N6519 2N652

    P2N50

    Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high


    OCR Scan     		PDF MTM/MTP2N50, MTP2N45 P2N50 tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50

    2N6518

    Abstract: 2N6520
    Text: 2N 6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 ° C


    OCR Scan     		PDF 2N6518 2N6520 -20mA, -30mA, -100mA 20MHz -100V -50mA, -100V, 002SD47 2N6518

    25A1075

    Abstract: 2N6497 2N6498 2N6499
    Text: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors


    OCR Scan     		PDF 2N6497 2N6498 2N6499 O-220 2N6497, 2N6498, 2N6499 2N6498 25A1075

    2N5672

    Abstract: 5671 2N5671 2n transistor high
    Text: 2N 5671 2N 5672 NPN S ILIC O N T R A N S IS T O R S ,E P IT A X IA L COLLECTOR T R A N S IS T O R S S I L I C I U M , N P N C O L L E C T E U R E P I T A X IE - High speed, high current, high power transistor Transistor de puissance rapide fo rt courant i 90 V


    OCR Scan     		PDF CB-19 2N5672 5671 2N5671 2n transistor high

    2N4119

    Abstract: 2n4117a SMP4117 4119a 4118A
    Text: B9 9-97 2N 4 1 1 7 , 2 N 4 1 1 7 A , 2N 4118, 2 N 4 1 1 8 A , 2 N 4 1 1 9 , 2 N 4 1 1 9 A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR ^ • AUDIO AMPLIFIERS Absolute maximum ratings at TA = 25°C • ULTRA-HIGH INPUT IMPEDANCE AMPLIFIERS Reverse Gate Source & Reverse Gate Drain Voltage


    OCR Scan     		PDF 2N4117 2N4117A 2N4118 2N4119 2N4117A, 2N4118A, 2N4119A SMP4117 4119a 4118A

    d 772 transistor

    Abstract: 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain
    Text: N AMER PHILIPS/DISCRETE b TE D • bbS3T31 0020140 7D7 I IAPX 2N3904 I SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic T O -92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement Is 2N 3906.


    OCR Scan     		PDF bbS3T31 2N3904 2N3906. 7Z749B8_ d 772 transistor 2n3904 philips 2N3904 2n3904 950 2N3904 plastic 2N3906 2N3906 plastic 2n3906 PNP transistor DC current gain

    bo 615

    Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
    Text: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297


    OCR Scan     		PDF 8F299 bo 615 ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126

    2n 2894

    Abstract: D 2894 transistor k 30 transistor 2894
    Text: 2N 28 94 PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL - HF small signal amplification A m plification H F petits^signaux v CEO -1 2 V •c - 2 0 0 mA - High speed switching at low current Commutation rapide; faible courant


    OCR Scan     		PDF

    702 sot 23

    Abstract: transistor marking 7002
    Text: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    OCR Scan     		PDF 2N7002 OT-23 200mA 702 sot 23 transistor marking 7002